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SK hynix has returned to Las Vegas for Consumer Electronics Show (CES) 2025, showcasing its latest AI memory innovations reshaping the industry. Held from January 7–10, CES 2025 brings together the brightest minds and groundbreaking technologies from the world’s leading tech companies.

This year, the event’s theme is “Dive In,” inviting attendees to immerse themselves in the next wave of technological advancement. SK hynix is emphasizing how it is driving this wave through a display of leading AI memory technologies at the SK Group exhibit. Along with SK Telecom, SKC, and SK Enmove, the company is highlighting how the Group’s AI infrastructure brings about true change under the theme “Innovative AI, Sustainable Tomorrow.”

Groundbreaking Memory Tech Driving Change in the AI Era

SK hynix is underlining its AI memory leadership at CES 2025

Visitors enter SK Group’s exhibit through the Innovation Gate, greeted by a video of dynamic wave-inspired visuals which symbolize the power of AI. The video shows the transformation of binary data into a wave which flows through the exhibition, highlighting how data and AI drives change across industries.

Continuing deeper into the exhibit, attendees make their way into the AI Data Center area, the focal point of SK hynix’s display. This area features the company’s transformative memory products driving progress in the AI era. Among the cutting-edge AI memory technologies on display are SK hynix’s HBM¹, server DRAM, eSSD, CXL^®2, and PIM³ products.

¹High Bandwidth Memory (HBM): A high-performance memory that vertically stacks multiple DRAM chips with through-silicon via (TSV). HBM3E is the extended version of HBM3, the fourth generation following HBM, HBM2, and HBM2E.
²Compute Express Link^®(CXL^®): A next-generation interface that connects the CPU, GPU, memory, and other components to efficiently enhance the performance of high-performance computing systems.
³Processing-In-Memory (PIM): A next-generation technology that integrates computational capabilities into memory, addressing data movement bottlenecks in AI and big data processing.

The 48 GB 16-layer HBM3E takes center stage at the AI Data Center area

A sample of the company’s pioneering 16-layer HBM3E is prominently showcased at the event, highlighting SK hynix’s leadership in the HBM field. As the world’s largest capacity HBM, the 48 GB 16-layer HBM3E, which is currently under development, is optimized for AI learning and inference. Visitors can also check out DDR5 RDIMM and MCR DIMM, high-speed server DRAM modules tailored for data center environments which offer rapid data processing and large memory capacity.

SK hynix’s cutting-edge AI memory technologies on display

As data storage becomes ever more crucial in the AI landscape, SK hynix is also showcasing its eSSD (enterprise SSD) solutions, including PS1010, PEB110, and PE9010. Designed for data centers, these products offer the reliability and rapid read/write speeds needed to handle the immense data generated by AI applications. Additionally, SK hynix is presenting its groundbreaking CXL technologies, such as CMM-DDR5⁴ and CMM-Ax⁵, which are pushing the boundaries of memory interfaces for enhanced flexibility and scalability in AI systems. Also on display are PIM solutions including GDDR6-AiM and AiMX⁶, a high-speed, low-power accelerator card which performs computational functions, revolutionizing data processing efficiency in AI environments.

⁴CXL Memory Module-DDR5 (CMM-DDR5): A next-generation DDR5 memory module utilizing CXL technology to boost bandwidth and performance for AI, cloud, and high-performance computing.
⁵CXL Memory Module-Ax (CMM-Ax): A high-performance memory module optimized for computational workloads, improving AI and data center efficiency.
⁶Accelerator-in-Memory Based Accelerator (AiMX): SK hynix’s specialized accelerator card tailored for large language model processing using GDDR6-AiM chips.

Visitors can also check out the company’s innovative on-device AI solutions

SK hynix is also showcasing its on-device AI solutions⁷ to highlight the AI service applications of its products. These include LPCAMM2⁸, the mobile NAND solution ZUFS⁹ 4.0, and PCB01—the industry’s highest-performing SSD for on-device AI PCs. Through these displays, SK hynix is underlining how these technologies deliver top performance with power efficiency, empowering a range of applications from mobile AI to consumer electronics.

⁷On-device AI: A technology that enables real-time AI processing directly on devices, enhancing responsiveness and delivering personalized services without relying on cloud-based computation.
⁸Low Power Compression Attached Memory Module 2 (LPCAMM2): LPDDR5X-based module solution that offers power efficiency and high performance as well as space savings. It offers performance levels equivalent to two DDR5 SODIMMs, making it optimized for on-device AI.
⁹Zoned Universal Flash Storage (ZUFS): An advanced version of UFS that improves data management efficiency by organizing data into zones, optimizing transfer between the operating system and storage device.

A Pioneer for a Sustainable Future

As CES 2025 unfolds, SK hynix’s presence once again cements its position as a leader in AI memory solutions. Through its innovative products and visionary approach, the company is demonstrating the essential role memory plays in the growing AI ecosystem. At CES 2025, SK hynix is not just showcasing products, but also offering a glimpse into a future where AI drives sustainable progress across industries. Looking ahead, CEO Kwak Noh-Jung shared the company’s vision. “Driven by constant technological innovation and a robust product lineup tailored for the AI era, SK hynix is on track to becoming a full stack AI solution provider,” he said.

The post SK hynix Showcases AI-Driven Innovations for a Sustainable Tomorrow at CES 2025 first appeared on SK hynix Newsroom.

• SK hynix to showcase technological capabilities, participating in the world’s largest consumer electronics show, CES 2025, from January 7-10
• Featuring a wide range of products driving the AI era, from HBM, the core of AI infrastructure, to next-gen memories like PIM
• Company to present new possibilities in the AI era through technological innovation and provide irreplaceable value

Seoul, January 3, 2025

SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it will showcase its innovative AI memory technologies at CES 2025, to be held in Las Vegas from January 7 to 10 (local time).

A large number of C-level executives, including CEO Kwak Noh-Jung, CMO (Chief Marketing Officer) Justin Kim and Chief Development Officer (CDO) Ahn Hyun, will attend the event. “We will broadly introduce solutions optimized for on-device AI and next-generation AI memories, as well as representative AI memory products such as HBM and eSSD at this CES,” said Justin Kim. “Through this, we will publicize our technological competitiveness to prepare for the future as a ‘Full Stack AI Memory Provider¹’.”

¹Full Stack AI Memory Provider: Refers to an all-round AI memory provider, which provides comprehensive AI-related memory products and technologies

SK hynix will also run a joint exhibition booth with SK Telecom, SKC and SK Enmove, under the theme “Innovative AI, Sustainable Tomorrow.” The booth will showcase how SK Group’s AI infrastructure and services are transforming the world, represented in waves of light.

SK hynix, which is the world’s first to produce 12-layer HBM products for 5th generation and supply them to customers, will showcase samples of HBM3E 16-layer products, which were officially developed in November last year. This product uses the advanced MR-MUF process to achieve the industry’s highest 16-layer configuration while controlling chip warpage and maximizing heat dissipation performance.

In addition, the company will display high-capacity, high-performance enterprise SSD products, including the ‘D5-P5336’ 122TB model developed by its subsidiary Solidigm in November last year. This product, with the largest existing capacity, high power and space efficiency, has been attracting considerable interest from AI data center customers.

“As SK hynix succeeded in developing QLC²(Quadruple Level Cell)-based 61TB products in December, we expect to maximize synergy based on a balanced portfolio between the two companies in the high-capacity eSSD market” said Ahn Hyun, CDO at SK hynix. The company will also showcase on-device AI products such as ‘LPCAMM2³’ and ‘ZUFS 4.0⁴,’ which improve data processing speed and power efficiency to implement AI in edge devices like PCs and smartphones. The company will also present CXL and PIM (Processing in Memory) technologies, along with modularized versions, CMM(CXL Memory Module)-Ax and AiMX⁵, designed to be core infrastructures for next-generation data centers.

²QLC: NAND flash is divided into SLC (Single Level Cell), MLC (Multi Level Cell), TLC (Triple Level Cell), QLC (Quadruple Level Cell), and PLC (Penta Level Cell) depending on how much information is stored in one cell. As the amount of information stored increases, more data can be stored in the same area.
³Low Power Compression Attached Memory Module 2 (LPCAMM2): LPDDR5X-based module solution that provides power efficiency and high performance as well as space savings. It has the performance effect of replacing two existing DDR5 SODIMMs with one LPCAMM2.
⁴Zoned Universal Flash Storage (ZUFS): A NAND Flash product that improves efficiency of data management. The product optimizes data transfer between an operating system and storage devices by storing data with similar characteristics in the same zone of the UFS, a flash memory product for various electronic devices such as digital camera and mobile phone.
⁵Accelerator-in-Memory based Accelerator (AiMX): SK hynix’s accelerator card product that specializes in large language models using GDDR6-AiM chips

In particular, CMM-Ax is a groundbreaking product that adds computational functionality to CXL’s advantage of expanding high-capacity memory, contributing to improving performance and energy efficiency of the next-generation server platforms⁶.

⁶Platform: Refers to a computing system that integrates both hardware and software technologies. It includes all key components necessary for computing, such as the CPU and memory.

“The changes in the world triggered by AI are expected to accelerate further this year, and SK hynix will produce 6^th generation HBM (HBM4) in the second half of this year to lead the customized HBM market to meet the diverse needs of customers,” said Kwak Noh-Jung, CEO at SK hynix. “We will continue to do our best to present new possibilities in the AI era through technological innovation and provide irreplaceable value to our customers.”

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top-tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), flash memory chips (“NAND flash”), and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Sooyeon Lee
E-Mail: global_newsroom@skhynix.com

Technical Leader
Kanga Kong
E-Mail: global_newsroom@skhynix.com

The post SK hynix to Unveil ‘Full Stack AI Memory Provider’ Vision at CES 2025 first appeared on SK hynix Newsroom.

SK hynix participated in the SK AI Summit 2024 held at COEX in Seoul, South Korea from November 4–5. The company officially announced it is developing the world’s largest capacity HBM¹, the 48 GB 16-layer HBM3E, at the event and shared other key achievements along with its vision to become a full stack AI memory provider.

Held under the slogan “AI Together, AI Tomorrow,” the event was formerly SK Group’s annual SK Tech Summit but has evolved with a greater focus on AI into the SK AI Summit. Global AI leaders gathered to explore strategies on thriving in the AGI² era and discuss ways to strengthen the AI ecosystem.

Prominent business figures in attendance included SK Group Chairman Chey Tae-won, SK hynix CEO Kwak Noh-Jung, SK Telecom President and CEO Ryu Young-sang, OpenAI Chairman and President Greg Brockman, and Microsoft Corporate Vice President for Azure Hardware Systems and Infrastructure Rani Borkar. Major tech companies such as Amazon Web Services (AWS) and Microsoft, as well as members of the K-AI Alliance³, also participated in the event, operating booths and interacting with industry stakeholders and visitors.

¹High Bandwidth Memory (HBM): A high-value, high-performance memory that vertically interconnects multiple DRAM chips using through-silicon via (TSV) and dramatically increases data processing speed in comparison to traditional DRAM products. HBM3E is the extended version of HBM3, the fourth-generation product that succeeds HBM, HBM2 and HBM2E.
²Artificial General Intelligence (AGI): A theoretical form of AI research that aims to create software with human-like intelligence and the ability to self-teach.
³K-AI Alliance: Established by SK Telecom, the K-AI Alliance consists of Korean tech companies which aim to lead the development and global expansion of the Korean AI industry.

As a key player in the AI industry, SK hynix showcased its leading AI memory products and achievements, with particular attention drawn to the announcement of the 16-layer HBM3E. Several SK hynix executives attended the product presentation which underlined the company’s technological leadership, including: CEO Kwak; Vice President Uksong Kang, head of Next Generation Product Planning; Vice President Munphil Park, head of HBM Product Engineering (PE); Kangwook Lee, head of Package Development; Youngpyo Joo, head of Software Solution; and SK hynix America’s Vice President of Technology Paul Fahey.

SK Group Chairman Chey Tae-won delivers opening remarks at the SK AI Summit

SK Group Chairman Chey opened the summit by presenting the group’s vision for AI in line with the summit’s slogan. “AI is in its early stages and there are many unknowns, so the participation and cooperation of numerous stakeholders is crucial to solve problems and make progress,” said Chey. “SK is a global company involved in everything from chips to energy, data center construction and operation, service development, and technology commercialization. We are working with the best partners in each field to foster global AI innovation.”

SK hynix’s Keynote Address: CEO Kwak Announces 16-Layer HBM3E

On the first day, CEO Kwak delivered a keynote address titled “Next AI Memory: Hardware to Everywhere” in which he officially announced the 16-layer HBM3E is under development.

SK hynix CEO Kwak Noh-Jung delivers a keynote speech at the summit

“We stacked 16 DRAM chips to realize 48 GB capacity and applied Advanced MR-MUF technology⁴ proven for mass production. In addition, we are developing hybrid bonding⁵ technology as a backup process,” explained Kwak. “The 16-layer HBM3E can improve AI learning performance and inference⁶ performance by up to 18% and 32%, respectively, compared to the 12-layer HBM3E.” The 16-layer HBM3E is planned to be commercialized in 2025.

⁴Advanced mass reflow-molded underfill (MR-MUF): Next-generation MR-MUF technology with warpage control, which enables warp-free stacking of chips 40% thinner than conventional chip thicknesses, and improved heat dissipation properties due to new protective materials.
⁵Hybrid bonding: A technology that directly bonds chips without forming a bump between them during stacking. This reduces the overall thickness of the chip, enabling high stacking. SK hynix is looking at both Advanced MR-MUF and hybrid bonding methods for 16-layer and higher HBM products.
⁶AI inference: The process of running live data through a trained AI model to make a prediction or solve a task.

At the announcement, Kwak also revealed the company’s roadmap featuring three areas: World First (world-first developed and mass-produced products), Beyond Best (next-generation, high-performance products), and Optimal Innovation (system-optimized products for the AI era). “Following the development of the 16-layer HBM3E and the 1cnm DDR5 RDIMM, we plan to develop next-generation, high-performance products such as HBM4 and UFS⁷ 5.0,” he said. “In the long term, we will commercialize custom HBM and CXL^®8 optimized for AI to become a full stack AI memory provider.”

⁷Universal Flash Storage (UFS): A mobile storage standard that allows simultaneous read and write functions, unlike the existing embedded MultiMediaCard (eMMC). Developed up to version 4.0, it combines the high speed of PC storage (SSD) with the low power of mobile storage (eMMC).
⁸Compute Express Link^® (CXL^®): A next-generation interface for efficiently utilizing high-performance computing systems.

Kwak also gave more information about HBM4. “We are working with the world’s leading foundry to improve the performance of the base die and ultimately reduce power consumption,” said Kwak. “With our ‘one-team’ partnership, we will deliver the most competitive products and further solidify our position as the HBM leader.”

Presentations: Key Executives Deliver Insights on HBM & Next-Gen Memory

During the talk sessions, SK hynix executives were key presenters in the AI chip and service areas, providing insights from their respective fields.

(From the first image) Professor Sungjoo Yoo of Seoul National University; Munphil Park of HBM PE; Professor Gunjae Koo of Korea University; and Youngpyo Joo, head of Software Solution, deliver presentations

Munphil Park of HBM PE and Professor Sungjoo Yoo of Seoul National University’s Department of Computer Science and Engineering presented on accelerator trends and the outlook for HBM. In response to Professor Yoo’s prediction of rising AI inference cost, Park emphasized that custom HBM products are emerging for improved performance and cost optimization. In addition, Park noted that three-way collaboration between customers, foundries, and memory providers is addressing this advancement.

Youngpyo Joo, head of Software Solution, and Professor Gunjae Koo of Korea University’s Department of Computer Science and Engineering discussed future architectures and new memory solutions. Professor Koo expressed the need for a new system software structure, and Joo explained how SK hynix meets this demand through its new CXL and PIM⁹ memory solutions.

⁹Processing-In-Memory (PIM): A next-generation technology that adds computational capabilities to memory to solve the problem of data movement congestion in AI and big data processing.

(From the first image) Vice President Uksong Kang, head of Next Generation Product Planning, and Paul Fahey, SK hynix America’s Vice President of Technology, participating in a fireside chat

SK hynix Vice Presidents Uksong Kang and Paul Fahey participated in a fireside chat on “Digital Neural Networks in the Era of Hyperconnectivity: AI and Memory Shaping the Future of the Industrial Landscape”. The pair spoke about how three technologies will play a significant role in the future: next-generation HBM with logic processes applied to base die; PIM, which will be crucial for on-device AI¹⁰; and CXL, which has memory sharing capabilities. They also revealed that SK hynix is working closely with partners to create next-generation AI memory products.

¹⁰On-device AI: A technology that enables AI processing directly on the device, improving responsiveness and delivering personalized, real-time services without the need for cloud-based computation.

Kangwook Lee, head of Package Development, taking part in a panel discussion with industry stakeholders

In a panel discussion, Kangwook Lee joined industry stakeholders to discuss the “Future Evolution of AI Chips and Infrastructure.”

(From the first image) Byungkyu Lee, Munuk Kim, and Senam Jang of DT; Jongoh Kwon, team leader of Package Development; Intae Whoang of P&T, Sunghyun Yoon of Infra Tech Center, and Junghan Kim of R&D; Jaeyung Jun and Kyungsoo Lee of Memory Systems Research, Sangsu Park of R&D; and Eunyoung Park, team leader of Safety Culture, giving presentations

In addition, Technical Leader Byungkyu Lee of Digital Transformation (DT) presented a talk titled “Eliminate Repetitive Tasks via E2E Automation and Shift to High Value-Added Work in Semiconductor Fabrication.” Meanwhile, Technical Leaders Munuk Kim and Senam Jang of DT delivered a joint presentation on “Improving Competitiveness of Production Quality by Intelligent Image Classification AI System Application.”

During another session, Jongoh Kwon, team leader of Package Development, along with Technical Leaders Intae Whoang of Package & Test (P&T), Sunghyun Yoon of Infra Tech Center, and Junghan Kim of R&D, covered the use of technologies in HBM. The presenters shared their technical insights on 16-layer HBM packaging technology, HBM production advancement using deep learning, and semiconductor research using AI. Meanwhile, Technical Leaders Jaeyung Jun, Kyungsoo Lee from Memory Systems Research and Sangsu Park from R&D spoke about future memory technologies. The presentation covered the potential of heterogeneous memory, requirements for on-device AI, and next-generation computational memory.

In a talk on AI services, Eunyoung Park, team leader of Safety Culture, attracted significant attention for her presentation titled “The Story of SK hynix’s Guardian, A Fusion of 24-Hour Unmanned Patrol Robot Ga-on and Vision AI.”

Booth: Groundbreaking AI Memory Lineup With Major Announcements

Under the theme “Deep Dive Into AI,” SK Group operated a booth with its subsidiaries. SK hynix’s full AI memory lineup was on display, including its latest HBM3E products.

(From the first image) The SK Group joint booth featured SK hynix’s key products, including: CMM-DDR5; AiMX; DDR5 MCR DIMM; eSSDs; LPCAMM2; LPDDR5X; Beetle X31; and automotive solutions

SK hynix also presented its CMM (CXL Memory Module)-DDR5¹¹ and AiMX, which are set to play a key role in the future. CMM-DDR5 can theoretically expand system bandwidth by up to 50% and capacity by up to 100% compared to systems equipped with only DDR5. Meanwhile, AiMX is an accelerator card with multiple GDDR6-AiM¹² chips that performs both storage and computation functions to improve AI performance.

¹¹CXL Memory Module-DDR5 (CMM-DDR5): A next-gen DDR5 memory module based on CXL that enhances system bandwidth, speed, and performance for AI, cloud, and high-performance computing.
¹²Accelerator-in-Memory (AiM): SK hynix’s product name for PIM semiconductors, including GDDR6-AiM.

Visitors to the booth could also check out DDR5 MCR DIMM¹³, an ultra-fast memory module for high-performance computing (HPC) and AI servers which reaches speeds of up to 8.8 gigabits per second (Gbps). In addition, LPCAMM2, an LPDDR5X¹⁴-based module solution, was highlighted as a product that will play an active role in on-device AI. Enterprise SSDs (eSSDs), including PS1010 E3.S, which are optimized for AI and data centers were also on display.

¹³Multiplexer Combined Ranks Dual In-line Memory Module (MCR DIMM): A module product with multiple DRAMs bonded to a motherboard in which two ranks, basic information processing units, operate simultaneously, resulting in improved speed.
¹⁴Low Power Double Data Rate 5 eXtended (LPDDR5X): Low-power DRAM for mobile devices, including smartphones and tablets, aimed at minimizing power consumption and featuring low voltage operation. LPDDR5X is the seventh generation product and was succeeded by LPDDR5T. The eighth generation LPDDR6 is under development.

The booth also featured AI-based systems and solutions. The company unveiled an AI-driven material quality prediction system and an automotive solution which attracted the attention of visitors.

“We provide AI memory solutions that span the entire spectrum of AI. Looking ahead, we are ready to create new experiences in the future with you,” said CEO Kwak. Following the successful announcement of the 16-layer HBM3E, SK hynix plans to further prepare for the future market in line with the vision presented at the SK AI Summit 2024.

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