SK hynix Inc. (or ‘the Company’, www.skhynix.com) today announced that the Company recently completed developing an enterprise SATA Solid State Drive (or ‘eSSD’). With its 72-Layer 512Gb (Gigabits) 3D NAND Flash chips, the Company is paving the way for its full-fledged entrance to the high value-added eSSD market.

SK hynix combined the 72-Layer 512Gb 3D NAND Flash with its in-house firmware and controller to provide the maximum density of 4TB (Terabytes). SK Hynix makes the most of its 72-Layer 512Gb 3D NAND chips to double the biggest density of the SSD of the same size with 256Gb NAND chips.

A single 4TB SSD could contain 200 UHD (Ultra-HD) movies, each of which is generally as large as approximately 20GB (Gigabytes). The new eSSD supports sequential read and write speed of up to 560MB/s (Megabytes per second) and 515MB/s, respectively, and it can perform 98,000 random read IOPS (Input/Output operations per second) and 32,000 random write IOPS. SK hynix also improved the read latency, which is of the utmost importance in eSSD performance. The Company is sampling the product to server and data center clients in the United States.

The Company also finished developing enterprise PCIe (PCI Express) SSD and is shipping samples to server and data center clients. The PCIe SSD will also use the 72-Layer 3D NAND and have a capacity of more than 1TB. The 1TB PCIe SSD operates at 2,700MB/s and 1,100MB/s of sequential read/write speed and runs random read/write performance of 230,000 IOPS and 35,000 IOPS.

“SK hynix started mass-producing Client SSD with its 3D NAND chips and in-house firmware and controller last year. Now we have expanded our SSD business portfolio with the development of eSSD,” said Jin Kang, the Head of NAND Planning and Enabling. “The Company plans to actively meet growing eSSD market demands to contribute to enhancing its profitability in NAND Flash business” he added.

According to IHS Markit, the SSD market revenue is expected to total USD 25.1 billion in 2017 and post a continuous annual growth of 5.6% to total 31.2 billion in 2021. Especially, the revenue of the enterprise SSD will lead the market growth by rising from USD 13.4 billion to 17.6 billon at a CAGR of 7% during the same period.

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SK hynix Inc.
Public Relations

Assistant Manager
Heeyoung Son
Phone: +82.31.8093.4719
E-Mail: heeyoung.son@sk.com

Assistant Manager
Hyun Kyung Olivia Lee
Phone: +82.31.8093.4771
E-Mail: hyunkyung14.lee@sk.com

The post SK hynix Inc. Ramps Up Enterprise SSDs with its 72-Layer 512Gb 3D NAND Flash first appeared on SK hynix Newsroom.

SK hynix Inc. today introduced the industry’s first 72-Layer 256Gb(Gigabit) 3D(Three-Dimensional) NAND Flash based on its TLC(Triple-Level Cell) arrays and own technologies. The Company stacks 1.5 times more cells for the 72-Layer 3D NAND than it does for the 48-Layer 3D which is already in mass production. A single 256Gb NAND Flash chip can represent 32GB(Gigabytes) storage.

SK hynix launched 36-Layer 128Gb 3D NAND chips in April 2016, and has been mass producing 48-Layer 256Gb 3D NAND chips since November 2016. In just 5 months, the Company has developed the 72-Layer 256Gb 3D NAND chips, securing the industry’s finest product portfolio.

The technological achievement of this 72-Layer 256Gb 3D NAND compares figuratively to the difficulty of stacking approximately 4 billion 72-storied skyscrapers on a dime. The chip also achieves approximately 30 percent more manufacturing productivity over its predecessor 48-Layer by stacking 1.5 times more cells and utilizing existing mass production facilities. Also by bringing high-speed circuit design into the new chip, its internal operation speed is two times faster and read/write performance is 20 percent higher than a 48-Layer 3D NAND chip.

With this new 72-Layer 3D NAND chips having 30% more efficiency in productivity and 20% higher performance, SK hynix has been currently developing NAND Flash solutions such as SSD(Solid State Drive) and storage for mobile devices such as smart phones. With the improved performance, high reliability and low power consumption, the Company looks forward to solidifying its business competence in the 3D NAND memory solutions.

“With the introduction of this industry’s highest productivity 3D NAND, SK hynix will mass produce the 256Gb 3D NAND in the second half of this year to provide this to worldwide business clients for optimum use in storage solutions” said vice president Jong Ho Kim, the Head of Marketing Division. “The Company plans to expand the usage of the product to SSDs and mobile gadgets such as smart phones to further improve its business structure weighted towards DRAM” he added.

3D NAND demand will rapidly increase across AI(Artificial Intelligence), big data and cloud storage in the 4th industrial revolution. According to Gartner, NAND Flash market revenue is expected to total USD 46.5 billion in this year and post continuous growth to amount to USD 56.5 billion in 2021.

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Media Contact

SK hynix Inc.
Public Relations

Assistant Manager
Heeyoung Son
Phone: +82.31.8093.4719
E-Mail: heeyoung.son@sk.com

The post SK hynix Inc. Introduces Industry’s Highest 72-Layer 3D NAND Flash first appeared on SK hynix Newsroom.

SK hynix Inc. (or ‘the Company’, www.skhynix.com) announced it has launched NVMe(Non-Volatile Memory Express) 1TB(Terabyte) enterprise SSD based on its own 2nd generation 3D NAND Flash and in-house controller. This SSD has been recently qualified by a major customer of the Company for server use.

This cutting-edge 3D NAND based NVMe SSD supports PCIe Gen 3×4 lanes, providing higher bandwidth and lower latency to process data far quicker than SATA SSDs. Presented in a M.2 form factor, the product is ideal for open cloud servers, being in compliance with OCS(Open Cloud Server) v2.1 specifications as well as applicable to Intel Broadwell(Intel® Xeon® Processor E5-2673) CPU systems. Plus, since most of the datacenter servers presented lately by OCP(Open Compute Project) have installed PCIe NVMe SSDs, the importance of NVMe SSD in the market is expected to increase gradually.

The SSD operates at 1800MB/s(Megabytes per second) and 770MB/s of sequential read/write speed and runs random read/write speed at 160,000 IOPS(Input/Output operations per second) and 30,000 IOPS.

“SK hynix is pleased to expect open cloud servers to enhance their performances with this advanced NVMe SSD” said Vice President SooHwan Choi, the Head of NAND Product Planning Office.

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About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), Flash memory chips (“NAND Flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com.

Media Contact

SK hynix Inc.
Public Relations

Assistant Manager
Heeyoung Son
Phone: +82.31.8093.4719
E-Mail: heeyoung.son@sk.com

The post SK hynix Launches NVMe Enterprise SSD utilizing 2nd Generation 3D NAND first appeared on SK hynix Newsroom.