Image Download

Seoul, November 12, 2018

SK hynix Inc. (or ‘the Company’, www.skhynix.com) announced that it has developed 1Ynm 8Gb (Gigabits) DDR4 (Double Data Rate 4) DRAM. The productivity of this product is increased by 20% and the power consumption reduced by more than 15%, compared to the previous generation, 1Xnm DRAM. It also supports a data transfer rate of up to 3,200Mbps, which is the fastest data processing speed in DDR4 interface.

The Company adopted a ‘4-Phase Clocking’ scheme, which doubles the clock signal to boost data transfer speed and stability.

SK hynix also introduced its own ‘Sense Amp. Control’ technology to reduce power consumption and data errors. With this technology, the Company successfully enhanced the performance of the sense amplifier. SK hynix improved the transistor structure to lower the possibility of data errors, a challenge that accompanies technology shrink. The Company also added a low-power power supply to the circuit to prevent unnecessary power consumption.

“This 1Ynm 8Gb DDR4 DRAM has optimum performance and density for our clients,” said vice president Sean Kim, the Head of DRAM Marketing. “SK hynix plans to start shipping from the first quarter of the next year to actively respond to market demand,” he added.

SK hynix plans to expand the 1Ynm technology process to Server and PC segments, and later to other various applications such as mobile devices.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader (Assistant Manager)
Hyun Kyung Olivia Lee
Phone: +82.31.8093.4771
E-Mail: hyunkyung14.lee@sk.com

The post SK hynix Inc. Develops 1Ynm 8Gb DDR4 DRAM first appeared on SK hynix Newsroom.

SK hynix Inc. (or ‘the Company’, www.skhynix.com) today introduced the world’s fastest 2Znm 8Gb(Gigabit) GDDR6(Graphics DDR6) DRAM. The product operates with an I/O data rate of 16Gbps(Gigabits per second) per pin, which is the industry’s fastest. With a high-end graphics card, this DRAM processes up to 768GB(Gigabytes) of graphics data per second. SK hynix has been planning to mass produce the product for a client to release high-end graphics card by early 2018 equipped with high performance GDDR6 DRAMs.

GDDR is specialized DRAM for processing an extensive amount of graphics data quickly according to what graphics cards command in PCs, workstations, video players and high performance gaming machines. Especially, GDDR6 is a next generation graphics solution under development of standards at JEDEC, which runs twice as fast as GDDR5 having 10% lower operation voltage. As a result, it is expected to speedily substitute for GDDR5 and GDDR5X. SK hynix has been collaborating with a core graphics chipset client to timely mass produce the GDDR6 for the upcoming market demands.

“With the introduction of this industry’s fastest GDDR6, SK hynix will actively respond to high quality, high performance graphics memory solutions market” said senior vice president Jonghoon Oh, the Head of DRAM Product Development Division. “The Company would help our clients enhance their performance of high-end graphics cards” he added.

GDDR6 is regarded as one of necessary memory solutions in growing industries such as AI(Artificial Intelligence), VR(Virtual Reality), self-driving cars, and high-definition displays over 4K to support their visualization. According to Gartner, average graphics DRAM density in graphics cards is to be 2.2GB this year and 4.1GB in 2021 with CAGR of 17%.

Image Download

Media Contact

SK hynix Inc.
Public Relations

Assistant Manager
Heeyoung Son
Phone: +82.31.8093.4719
E-Mail: heeyoung.son@sk.com

The post SK hynix Inc. Introduces Industry’s Fastest 8Gb Graphics DRAM (GDDR6) first appeared on SK hynix Newsroom.

SK hynix Inc. (or ‘the Company’, www.skhynix.com) announced it has launched the world’s first highest density of 8GB(Gigabytes) LPDDR4X mobile DRAM using its state of the art dual channel 16Gb chips. SK hynix has been planning to mass produce the product for upcoming flagship smartphones equipped with 8GB mobile DRAM. 8GB is the highest density in the LPDDR4X standard, which has 20% of superiority in power efficiency to current LPDDR4.

Data I/Os run at ultra-low voltage of 0.6V in the LPDDR4X compared to 1.1V in LPDDR4, having better power efficiency accordingly. The 8GB LPDDR4X processes 34.1GB of data per second with 64-bit I/O. Furthermore, the package size is the smallest ever (12mm*12.7mm), which is scaled down by more than 30% compared to an 8GB LPDDR4 with the thickness thinner than 1mm. The Company expects the product to be installed in a variety of mobile devices and optimize user conveniences with the virtue of the efficiency in battery use, the high performance, and the compactness.

“SK hynix would help mobile device users maximize their experiences” said senior vice president Jonghoon Oh, the Head of DRAM Product Development Division. “The Company plans to expand the usage of the product to various applications such as high end laptops and automotive electronics as well as mobile gadgets” he added.

According to IHS Markit, average density in high end smart phones is to be 3.5GB this year and 6.9GB in 2020 with CAGR bigger than 25%. Plus, demand for 8GB mobile DRAM starts to be generated in this year and will occupy the biggest share in the high end smart phones.

Image Download

Media Contact

SK hynix Inc.
Public Relations

Assistant Manager
Heeyoung Son
Phone: +82.31.8093.4719
E-Mail: heeyoung.son@sk.com

The post SK hynix Inc. Launches the World’s First Highest Density 8GB LPDDR4X first appeared on SK hynix Newsroom.

Seoul, February 9, 2015

SK hynix Inc. (or ‘the Company’, www.skhynix.com) announced its 8Gb(Gigabit) LPDDR4(Low Power DDR4) has been installed in a brand-new smartphone model for the first time in the industry. It is the top mobile DRAM solution existing of high density which features ultrahigh speed and low power consumption developed by the Company for the first time in the world at the end of 2013.

SK hynix has collaborated with relevant clients to make the world’s first installation of LPDDR4 in the smart device. As a result, the Company succeeded to commercialize the 8Gb LPDDR4 in connection with a state of the art SoC(System on Chip) then loaded it onto the newest flagship smartphone of a client.

This 8Gb LPDDR4 works faster than 3200Mbps and operates at ultralow-voltage of 1.1V to enhance the power efficiency by 30% which runs two times speedier than 1600Mbps and does at lower voltage than 1.2V of LPDDR3. With this product, it is available for users of smart devices to experience high quality functions and for full HD(High-Definition) display to be materialized smoothly.

The importance of memory semiconductor for performance improvement of mobile devices has been growing up. In accordance with the market trend, SK hynix is leading the industry by providing the best mobile memory solution for the first time to the commercialized smartphone.

Especially, primary worldwide smartphone manufacturers are expected to adopt LPDDR4 as a core memory solution to their premium products and besides smartphones with 4GB(Gigabytes) DRAM are forecast to increase from the latter half of this year. SK hynix is going to handle with various clients’ demands by making the best use of the 8Gb LPDDR4. Accordingly, the Company will continue to retain its market leadership as it will expand a clientele with various density types.

According to IHS Technology, premium smartphones equipped with 4GB DRAM composed of 8Gb DRAMs will come out in this year and be one of the main products taking 36% of the whole market to exceed portion of those with 3GB in the next year.

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), Flash memory chips (“NAND Flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com.

Media Contact

SK hynix Inc.
Public Relations

Assistant Manager
Heeyoung Son
Phone: +82.2.3459.5316
E-Mail: heeyoung.son@sk.com

The post SK hynix to Lead 8Gb LPDDR4 Adoption in Devices first appeared on SK hynix Newsroom.

SK hynix Inc. (or ‘the Company’, www.skhynix.com) announced that it has developed the world’s first 8Gb(Gigabit) LPDDR3(Low Power DDR3) using its advanced 20nm class process technology. This product is a top-performance mobile memory solution which features high density, ultrahigh speed and low power consumption.

The new products can be stacked up and realize a high density of maximum 4GB(Gigabytes, 32Gb) solution in a single package. In addition, the height of this package becomes dramatically thinner than the existing 4Gb-based one. In terms of its high density and competitive package height, it is suitable for the newest trend of the mobile applications.

The product works at 2133Mbps which surpasses 1600Mbps of existing LPDDR3 in the aspect of its data transmission speed and is the world’s fastest mobile DRAM. With a 32-bit I/O it processes up to 8.5GB of data per second in a single channel, and 17GB in a dual channel. It works at ultra low-voltage of 1.2V.

While this new LPDDR3 runs two times faster than LPDDR2, its standby power consumption decreases more than 10% compared to LPDDR2 products, therefore it satisfies both low power consumption and high performance which mobile applications highly demand.

It can be provided in various forms such as ‘PoP’(Package on Package) or being in a single package with ‘eMMC’(embedded Multi Media Card) which is installed in mobile gadgets as well as ‘On-board’ type embedded in high-end ultrabooks and tablets.

“With the development of this high density LPDDR3 using 20nm class, SK hynix is now able to supply a top-performance product suitable for mobile devices to the market”, Senior Vice President Richard Chin, the Head of Global Sales & Marketing said. “Especially, this development has its significance since the Company has secured top-level competitiveness in mobile products by developing it simultaneously with PC DRAM using the same 20nm class process technology” he added.

Samples of this new product have been shipped to customers and the Company plans to start mass production of it at the end of this year.

High density LPDDR3 memory products over 2GB are expected to be noticeably loaded mainly on to high-end mobile devices from the second half of this year. To meet the growing needs of mobile market, SK hynix plans to develop the most advanced technologies for the rapidly evolving mobile applications industry and will lead the market with the high performance products.

Image Download

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), Flash memory chips (“NAND Flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com.

Media Contact

SK hynix Inc.
Public Relations

Assistant Manager
Heeyoung Son
Phone: +82.2.3459.5316
E-Mail: heeyoung.son@sk.com

Senior Manager
Seong-Ae Park
Phone: +82.2.3459.5325
E-Mail: seongae.park@sk.com

The post SK hynix Developed the World’s First High Density 8Gb LPDDR3 first appeared on SK hynix Newsroom.

hynix Semiconductor Inc (“hynix”) today announced the validation of the HMT31GR7AUP4C, the world’s first MetaRAM based 8GB 2-rank DDR3 RDIMM, on Intel’s Nehalem CPU based Tylersburg-EP platform

When fully populated with 3 DIMMs per channel, the hynix 8GB RDIMM operates at 1066MHz speed. Competing industry standard modules exhibit performance degradation to 800MHz when operating under full load. The hynix 8GB DDR3 RDIMM enables a maximum capacity of 144GB operating at 1066MHz in a dual processor Tylersburg-EP platform, not possible with industry standard DIMMs.

hynix 8GB DDR3 RDIMM satisfies the market demand for high performance server memory and expects to secure a leading position in this market. The 16GB DDR3 RDIMM based on MetaRAM technology is slated for introduction in the third quarter of this year. The emerging LR-DIMM (Load Reduced-DIMM), the future standard for memory buffer, is expected to adopt performance objectives similar to MetaRAM.

Volume production of the 8GB DDR3 2-Rank RDIMM will begin from second quarter of this year. hynix also plans to receive Intel validation on 8GB DDR3 RDIMM operating at 1333MHz in the first half of this year.

Details on the hynix 8GB DDR3 RDIMM validation can be found on the Intel web site at,

http://www.intel.com/technology/memory/ddr/valid/MetaRAM_selftest_validation.pdf

Image Download

About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) , Flash memory chips (“NAND Flash”) and CMOS Image Sensor (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.

Media Contact

CORPORATE COMMUNICATIONS

Assistant Manager
Seong-Ae Park
Phone: +82.2.3459.5325
Fax: +82.2.3459.5333
E-Mail: seongae.park@hynix.com

Assistant Manager
Jaesoon Kim
Phone: +82-2-3459-5320
Fax: +82-2-3459-5333
E-Mail: jaesoon.kim@hynix.com

The post hynix Announces Validation of the World’s First 8GB 2-Rank DDR3 R-DIMM first appeared on SK hynix Newsroom.

hynix Semiconductor, Inc. today announced the availability of DRAM industry’s first JEDEC standard 8GB DDR2 registered dual in-line memory modules (R-DIMMs) by utilizing hynix’s own multi-die stacking technology.

hynix has begun sampling the 8GB DDR2 R-DIMMs for high-end server applications. The new modules consist of 36 2Gb dual die package (DDP) devices and a total of 72 die by utilizing hynix’s own multi-die stacking technology. The hynix 2Gb DDP devices utilize two 1Gb DDR2 SDRAM die based on the company’s .10-micron process technology in one package. hynix’s new DDR2 R-DIMMs can fully meet the JEDEC standard of 30.35mm module width and 133.35 mm height, maximizing memory capacity to 8GB. Currently, other 8GB DDR2 R-DIMMs already available in the market place are extended-size Tall-DIMMs.

The development of the JEDEC standard 8GB DDR2 R-DIMM by hynix demonstrates the company’s leading technical expertise and strong competitiveness in the server market. hynix is expected to further enhance its keen focus on delivering high-quality, reliable solutions to customers by committing to research and development on higher-density and smaller-form memory modules.

Image Download

About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is a leading supplier of semiconductor memory products such as Dynamic Random Access Memory chips (“DRAMs”), Static Random Access Memory chips (“SRAMs”) and Flash memory chips to a wide range of customers. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.

The post hynix Introduces DRAM Industry’s First JEDEC Standard 8GB DDR2 R-DIMMs first appeared on SK hynix Newsroom.