SK hynix is showcasing its cutting-edge AI memory technologies at GPU Technology Conference (GTC) 2025 held in San Jose from March 17–21.

Hosted annually by NVIDIA, GTC is one of the world’s leading AI conferences. This year’s event, held under the theme “What’s Next in AI Starts Here,” features over 1,000 sessions and 300 exhibitions highlighting the latest advancements and solutions in AI technology.

Visitors gather to see the latest AI memory innovations at SK hynix’s booth

At the conference, SK hynix is presenting a booth under the theme “MEMORY, POWERING AI and TOMORROW,” showcasing memory products that accelerate AI innovation. These products are displayed in four sections: AI/Data Centers (DC), HBM¹, On-Device, and Automotive. In particular, the HBM section debuted a model of the 12-layer HBM4, which is currently under development, demonstrating the company’s overwhelming technological leadership.

¹High Bandwidth Memory (HBM): A high-value, high-performance product that significantly enhances data processing speeds by vertically stacking multiple DRAM chips, surpassing the capabilities of traditional DRAM. HBM has evolved through six generations, starting with the original HBM and followed by HBM2, HBM2E, HBM3, HBM3E, and HBM4.

The AI/Data Centers section features high-performance eSSDs, DIMM solutions, and more

The AI/DC section features enterprise SSDs (eSSDs) optimized for large-scale data processing and storage, including PEB110, PS1010, and PEB9010, alongside data center DIMM² products such as DDR5 RDIMM and MRDIMM. The world’s highest-specification graphics memory, GDDR7³, is also on display. Additionally, next-generation AI memory products are drawing attention, including CMM-DDR5⁴, a DDR5-based CXL⁵ product, and SOCAMM⁶, a low-power DRAM module for AI servers. The company plans to begin mass production of SOCAMM in line with the market’s emergence, leveraging its strengths in LPDDR5X⁷ and server memory to expand its AI memory portfolio.

²Dual In-line Memory Module (DIMM): A module in which multiple DRAM chips are combined on a substrate.
³Graphics DDR (GDDR): A standard specification of graphics DRAM defined by JEDEC and specialized for processing graphics more quickly. It is now one of the most popular memory chips for AI and big data applications.
⁴CXL Memory Module-DDR5 (CMM-DDR5): A next-generation DDR5 memory module utilizing CXL technology to boost bandwidth and performance for AI, cloud, and high-performance computing.
⁵Compute Express Link (CXL): A next-generation interface that efficiently connects CPUs/GPUs and memory in high-performance computing systems, supporting large-scale, ultra-fast computations. Applying CXL to existing memory modules can expand capacity by more than 10 times.
⁶Small Outline Compression Attached Memory Module (SOCAMM): A next-generation memory module based on LPDDR5X, featuring a smaller form factor than traditional server memory modules while offering higher power efficiency.
⁷Low Power Double Data Rate 5X (LPDDR5X): Low-power DRAM for mobile devices, including smartphones and tablets, aimed at minimizing power consumption and featuring low voltage operation. LPDDR5X is the seventh-generation LPDDR product.

The company unveiled a model of its HBM4 at GTC 2025

The highlight of the HBM section is undoubtedly HBM4. Unveiled for the first time in the world at GTC 2025, the in-development HBM4 is set to offer significantly enhanced base die performance and vastly reduced power consumption. Following the introduction of this latest AI memory solution, HBM4, SK hynix will further strengthen its industry leadership. Additionally, the company is showcasing the industry’s best-performing and highest-capacity 12-layer HBM3E available today, alongside NVIDIA’s GB200 Grace^TM Blackwell Superchip.

The On-Device section features various products tailored for on-device and AI applications, including LPDDR6 and LPCAMM2

Visitors to the On-Device section can explore the company’s high-performance, low-power memory solutions designed for on-device data processing and AI computing. These include LPDDR6, LPCAMM2⁸, PCB01, and ZUFS⁹ 4.0.

⁸Low Power Compression Attached Memory Module 2 (LPCAMM2): LPDDR5X-based module solution that offers power efficiency and high performance as well as space savings. It offers performance levels equivalent to two DDR5 SODIMMs, making it optimized for on-device AI.
⁹Zoned Universal Flash Storage (ZUFS): An advanced version of UFS that improves data management efficiency by organizing data into zones, optimizing transfer between the operating system and storage device.

Various vehicle memory solutions are also on display in the Automotive section

Meanwhile, at the Automotive section, SK hynix is presenting a range of vehicle memory solutions aimed at advancing the era of autonomous mobility. These include HBM2E, LPDDR5, UFS¹⁰ 3.1, and Gen4 SSD tailored for the automotive industry.

¹⁰Universal Flash Storage (UFS): A breakthrough type of flash memory that can simultaneously read and write data. Due to its low-power consumption, high-performance and reliability, UFS is widely applied in mobile devices.

As well as its exhibition at GTC 2025, SK hynix has also prepared a virtual booth. Online visitors can browse a web brochure detailing the company’s achievements in 2024 and information on key products including server solutions, the high-capacity SSD PS1012, GDDR7, and CMM-DDR5. Furthermore, there are also videos of innovative products such as HBM, 1c DDR5¹¹, and automotive memory, emphasizing SK hynix’s technological leadership.

¹¹1c DDR5: A 16 gigabit DDR5 DRAM built using the 1c node, the sixth generation of the 10 nm DRAM process. The 10 nm DRAM process was developed in the order of 1x-1y-1z-1a-1b-1c. In October 2024, SK hynix became the first in the world to successfully develop the 1c DDR5 DRAM.

Jungsoo Park of HBM Product Planning presenting on the importance of HBM in the AI era

The company also shared its insights with industry professionals during the event’s presentation sessions. Technical Leader Jungsoo Park of HBM Product Planning presented on “HBM: Backbone of High-Performance Computing and AI,” highlighting the evolution of HBM technology and SK hynix’s unrivaled leadership in the field.

Kihong Kim of Mobility Business giving a talk on SK hynix’s automotive memory

Meanwhile, in an online session titled “Preparing for the Future: Automotive Memory and Storage Requirements”, Technical Leader Kihong Kim of Mobility Business introduced the characteristics of memory and storage in the automotive industry and SK hynix’s related strategic approach.

As AI technology continues its rapid evolution, the role of memory is becoming increasingly vital. At GTC 2025, SK hynix is underlining its AI memory leadership by introducing solutions optimized for the AI era. Looking ahead, the company will further strengthen collaboration with global AI companies to remain at the forefront of AI memory innovation.

The post SK hynix Showcases Unrivaled AI Memory Leadership at GTC 2025 first appeared on SK hynix Newsroom.

• Provision of 12-layer HBM4 samples, a new DRAM product with ultra-high performance for AI, to major customers comes earlier than scheduled
• Mass production of products with best-in-class bandwidth and capacity to start in 2H 2025 following certification process
• Enhancement of position as front-runner in AI ecosystem follows years of efforts to overcome technological limitations

Seoul, March 19, 2025

SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it has shipped the samples of 12-layer HBM4, a new ultra-high performance DRAM for AI, to major customers for the first time in the world.

The samples were delivered ahead of schedule based on SK hynix’s technological edge and production experience that have led the HBM market, and the company is to start the certification process for the customers. SK hynix aims to complete preparations for mass production of 12-layer HBM4 products within the second half of the year, strengthening its position in the next-generation AI memory market.

The 12-layer HBM4 provided as samples this time feature the industry’s best capacity and speed which are essential for AI memory products.

The product has implemented bandwidth¹ capable of processing more than 2TB (terabytes) of data per second for the first time. This translates to processing data equivalent to more than 400 full-HD movies (5GB each) in a second, which is more than 60 percent faster than the previous generation, HBM3E.

¹Bandwidth: In HBM products, bandwidth refers to the total data capacity that one HBM package can process per second.

SK hynix also adopted the Advanced MR-MUF process to achieve the capacity of 36GB, which is the highest among 12-layer HBM products. The process, of which competitiveness has been proved through a successful production of the previous generation, helps prevent chip warpage, while maximizing product stability by improving heat dissipation.

Following its achievement as the industry’s first provider to mass produce HBM3 in 2022, and 8- and 12-high HBM3E in 2024, SK hynix has been leading the AI memory market by developing and supplying HBM products in a timely manner.

“We have enhanced our position as a front-runner in the AI ecosystem following years of consistent efforts to overcome technological challenges in accordance with customer demands,” said Justin Kim, President & Head of AI Infra at SK hynix. “We are now ready to smoothly proceed with the performance certification and preparatory works for mass production, taking advantage of the experience we have built as the industry’s largest HBM provider.”

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”) and flash memory chips (“NAND flash”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Kanga Kong, Minseok Jang, Sooyeon Lee
E-Mail: global_newsroom@skhynix.com

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• Various memory products for AI data centers, on-device, automotive businesses on display

Seoul, March 19, 2025

SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it will participate in the GTC 2025, a global AI conference taking place March 17-21 in San Jose, California, with a booth titled “Memory, Powering AI and Tomorrow”.

The company will present HBM and other memory products for AI data centers and on-device¹ and memory solutions for automotive business essential for AI era.

¹On-device: a technology that implements certain functions on the device itself, instead of going through computation by a physically separated server. As for the on-device AI, a smart device’s direct collection and computation of information allows fast reactions of the AI performance, while promising an improved customized AI service

Among the industry-leading AI memory technology to be displayed at the show are 12-high HBM3E and SOCAMM², a new memory standard for AI servers.

²SOCAMM(Small Outline Compression Attached Memory Module): a low-power DRAM-based memory module for AI server

At the event, top company executives led by Chief Executive Officer Kwak Noh-Jung, President, Head of AI Infra and Chief Marketing Officer Juseon (Justin) Kim and Head of Global S&M Lee Sangrak will meet with the leaders of the global AI industry to enhance collaboration.

Following the industry’s first mass production and supply of the 12-high HBM3E, SK hynix is now planning to complete the preparatory works for large-scale production of the 12-high HBM4 within the second half for immediate start of supply to order. At GTC 2025, a model of the 12-high HBM4, which is under development, will also be displayed.

“We are proud to present our line-up of industry-leading products at GTC 2025,” President & Head of AI Infra Juseon (Justin) Kim said. “With a differentiated competitiveness in the AI memory space, we are on track to bring our future as the Full Stack AI Memory Provider³ forward.”

³Full Stack AI Memory Provider: SK hynix’s vision to be a provider of a full-range of AI memory products and technologies

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”) and flash memory chips (“NAND flash”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Kanga Kong, Minseok Jang, Sooyeon Lee
E-Mail: global_newsroom@skhynix.com

The post SK hynix Showcases Industry-Leading Memory Technology at GTC 2025 first appeared on SK hynix Newsroom.

Amid intensifying technological competition and diversifying customer demands in today’s AI market, HBM¹ remains a gamechanger.

¹High Bandwidth Memory (HBM): A high-value, high-performance product that possesses much higher data processing speeds compared to existing DRAMs by vertically connecting multiple DRAMs with through-silicon via (TSV).

Backed by industry-leading technology, SK hynix’s HBM played a pivotal role in the company achieving its best-ever performance in 2024. In 2025, continued innovation and enhanced productivity will be crucial to drive even greater growth. The role of the HBM Heterogeneous Integration Technology team, responsible for optimizing yield, quality, and cost, as well as advancing packaging technology, is therefore more critical than ever.

To find out more about the team’s efforts, the SK hynix Newsroom sat down with its leader, Vice President Kwonwhan Han. In the first episode of an interview series featuring newly appointed executives in 2025, Han discussed HBM technology innovation strategies for leading the AI memory market along with his vision and goals.

Two Birds, One Stone: Achieving Technological & Operational Innovation

Han, who joined SK hynix in 2002, was involved from the initial development of HBM and has since led the development and mass production of every HBM generation, playing a key role in establishing the company’s HBM leadership.

“When HBM was first launched, production scale and demand were nowhere near today’s levels” he stated. “However, the emergence of ChatGPT in 2023 sparked explosive growth in the AI market and a rapid surge in customer demand. In response, we were tasked with building a much larger production line than the existing one in a short period of time. To meet demand, we also converted parts of other production lines into HBM production lines, establishing a large-scale mass production system. At the time, it seemed nearly impossible to reach our goals, but with the dedicated efforts of the HBM Heterogeneous Integration Technology team and related departments, we were able to succeed.”

Han’s strategic response became the foundation for SK hynix’s increased HBM market share and world-class production capacity and quality. Building on this experience and expertise, he is now set to lead the HBM Heterogeneous Integration Technology team. In this position, he will play a crucial role in enhancing mass-production capabilities and establishing a new technical base for a smooth transition to next-generation HBM.

“To stay competitive in the HBM market, it is essential to not only have technological expertise but also deliver the best products to customers in a timely manner,” Han claimed. “I will do my utmost to establish a collaborative system that can promptly respond to market and customer demands through technological and operational innovation, ensuring stable mass production.”

Han plans to develop a collaborative system which can respond to market demands, ultimately leading to stable HBM mass production

Building the Optimal Mass-Production Environment to Meet Market & Customer Demands

“The most important task in 2025 is to respond steadily to growing market demands, while also solidifying our technological readiness for mass production of next-generation HBM,” Han emphasized.

“The 12-layer HBM3E, which will be the main focus of production in 2025, has a higher level of process complexity compared to the existing 8-layer HBM3E,” he revealed. “Additionally, as next-generation HBM products evolve, we expect the technical challenges will become more demanding. While mass production will begin after overcoming many of these challenges during development, unexpected variables may still emerge as we rapidly scale production, and it will be difficult to resolve them. Therefore, the HBM Heterogeneous Integration Technology team plans to focus on proactively anticipating these variables and developing a thorough response strategy.”

Recently, as demand for AI memory increases, there has also been a gradual rise in demand for customized products, especially among big tech companies. However, HBM involves more process steps and a more complex production process than other products, making it challenging to meet these demands. “Rather than simply increasing production volume, establishing an efficient operational system has become even more important,” Han stated. “We will enhance the flexibility of our production lines and strengthen collaboration with customers to maximize our HBM competitiveness.

“We are improving various operational systems through collaboration to enhance HBM production flexibility. From the development stage, development and mass production departments will work as one, closely cooperating with customers to increase production efficiency. To achieve this, we aim to establish an optimal mass-production environment by proactively addressing technical challenges with relevant departments. Based on these efforts, we will contribute to SK hynix’s advancement as a full stack AI memory provider.”

Han aims to enhance production line flexibility and strengthen customer collaboration to maximize HBM competitiveness

Fulfilling the Leader’s Role: Fostering Employee & Company Growth

Han emphasized that the key to driving outstanding performance lies in employees’ self-driven motivation, adding that leadership plays a crucial role in fostering such a mindset. In particular, he expressed a strong commitment to supporting the growth of younger team members.

“I believe that the role of a leader is to communicate in order to create an environment where employees can motivate themselves and take ownership of their work,” he said. “I will actively communicate and solve problems with my team so that passionate young employees who do their best can grow together with the company.”

In addition, Han emphasized that on-site safety remains the most important value even in a rapidly changing market, and encouraged employees to confidently move forward together.

“We are currently growing rapidly, and we must focus on achieving our goals. However, nothing is more important than safety at our facilities,” he claimed. “To ensure this, our management will lead by example. Also, I hope we never forget that we are the world’s best in our industry. Moving forward, I will continue to communicate and collaborate with my team, working together to build an even stronger SK hynix.”

Read more articles from the New Leadership Spotlight 2025 series

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SK hynix participated in SEMICON^® Korea 2025, held at COEX in Seoul from February 19–21, sharing insights into semiconductor technology trends and reinforcing its AI memory leadership.

Organized by SEMI¹, SEMICON Korea has grown to become the country’s largest semiconductor exhibition since its launch in 1987. The event brings together semiconductor manufacturers, along with materials, components, and equipment companies, to exchange the latest technologies and trends. This year’s exhibition, themed “Lead the Edge to the New Era,” featured various exhibits and presentations which explored the technological edge needed to drive AI innovation.

¹SEMI: The global industry association with over 3,000 member companies worldwide across the semiconductor and electronics design and manufacturing supply chain.

Sharing Industry Expertise & Strengthening Collaboration

At the event, SK hynix experts provided insights on various topics ranging from next-generation memory to sustainable manufacturing technology.

These presentations covered emerging memory² technologies such as SOM³, HBM⁴ stacking technology, and advanced manufacturing methods. The employees also gave talks on fab automation, digital twin⁵ applications, and the company’s net zero initiatives, highlighting SK hynix’s commitment to innovation and sustainability.

²Emerging memory: A new class of memory technologies that differ from traditional DRAM and NAND flash, including RRAM, MRAM, PCM, and FeRAM.
³Selector-Only Memory (SOM): A cross-point memory device that integrates both selector and memory functions using a dual-function material (DFM).
⁴High Bandwidth Memory (HBM): A high-value, high-performance product that possesses much higher data processing speeds compared to existing DRAMs by vertically connecting multiple DRAMs with through-silicon via (TSV).
⁵Digital twin: A technology that creates a virtual replica of a physical object, allowing simulations to predict real-world outcomes.

Meanwhile, SK hynix CEO Kwak Noh-Jung, in his capacity as Chairman of the Korea Semiconductor Industry Association (KSIA), attended the leadership dinner on the first day of the exhibition. Kwak engaged with global semiconductor leaders and executives at the dinner, fostering stronger industry collaboration and partnerships.

During his congratulatory speech, Kwak emphasized the growing need for the semiconductor industry to adapt in the AI era and meet future challenges and opportunities.

“Semiconductors are a crucial resource that drives both the global economy and national security. Their importance has grown even further in the AI era,” he said.

“In line with this year’s theme, Lead the Edge to the New Era, companies across the industry need to continue expanding new technologies and possibilities to prepare for the future.”

Leading the New Era

At SEMICON Korea 2025, SK hynix underscored its pivotal role in shaping the future of semiconductor technology. By sharing insights on cutting-edge memory technologies and sustainable practices, the company not only reinforced its AI memory leadership but also demonstrated its commitment to driving industry-wide innovation. As the industry continues to evolve, SK hynix is poised to lead the charge toward a more advanced and sustainable era.

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The world runs on data—a ceaseless tide of ones and zeros surging through networks, powering everything from streaming services to AI. To handle this data deluge, data centers must employ more advanced memory solutions that meet ever-growing performance demands.

However, traditional methods of scaling memory are facing limitations. The constraints of processors and memory technologies, coupled with escalating costs and power consumption for data centers, have highlighted the need for a revolutionary approach. Enter Compute Express Link^® (CXL^®), a transformative memory interconnect technology designed to tackle the challenges of the AI era.

This Rulebreakers’ Revolutions  episode will cover SK hynix’s development of CXL solutions, detailing how the company overcame obstacles, such as a lack of industry specifications, to become a leader in the CXL field and a key contributor to the CXL ecosystem.

Mission: Harnessing New Interconnect Tech for Memory Scaling

In the AI era, data centers need to continuously expand their memory capacity to handle ever-growing volumes of data. However, scaling memory capacity through traditional methods is becoming prohibitively expensive and inefficient. For example, adding terabyte (TB)-scale memory to a single CPU system can significantly increase the total cost of ownership¹ (TCO) and power consumption. Attempting to address this by increasing memory channels or integrating higher capacity memory often results in even greater power usage and heat generation, further inflating cooling system and management costs. This has underlined the need for innovative memory system designs which can process data faster, more efficiently, and cost effectively.

¹Total cost of ownership: The complete cost of acquiring, operating, and maintaining an asset, including purchase, energy, and maintenance expenses.

Data center memory capacity needs to increase to handle the growing demands of the AI era

Over the past decade, the industry has been developing new memory interconnect technologies to meet this market demand. Memory interconnect technology refers to the method by which processors exchange data with memory, playing a critical role in determining the speed and efficiency of data processing. In traditional memory architectures, memory is physically connected to a nearby single processor, which can lead to an over-provision of memory resources when applications are not using the memory. New memory interconnect technologies such as CXL can overcome this issue by allowing multiple processors to share memory for improved efficiency.

This has led to great interest in CXL, however developing the technology would prove challenging as there was no precedent for the process and initially no industry-established specifications. Without the JEDEC² specifications which are generally provided for DRAM products, the development process for CXL was fundamentally more complex than usual.

²JEDEC Solid State Technology Association: With over 350 member companies, JEDEC is the global leader in developing open standards for the microelectronics industry.

Faced with having to develop new CXL products without industry specifications to break the barriers of memory scaling, SK hynix tapped into its internal expertise and collaborated with industry partners.

Into the Unknown: Developing Pioneering CXL Tech From Scratch

Following the introduction of CXL in 2019, SK hynix soon recognized the technology’s capability to meet ever-growing memory scaling needs. As an open industry-standard interconnect, CXL unifies the interfaces of different system devices such as memory, storage, and processors. It supports features such as memory sharing, allowing multiple processors to access the same memory for improved data sharing, and memory pooling, in which memory from a common pool is assigned to processors for enhanced efficiency. Furthermore, CXL also enables memory switching, allowing hundreds of devices such as processors to share memory resources while independently processing data.

In addition to these innovative features, SK hynix became further convinced of CXL’s immense potential after observing increased market and customer commitment to the technology and identifying its promise in addressing technical and cost challenges. However, the company had to begin the project by overcoming a significant obstacle—a lack of industry specifications. SK hynix therefore soon set about developing its own basic requirement document after participating in CXL standardization activities and working with customers to define specifications. The company also collaborated with CXL controller companies to define controller requirements for the specifications document. Furthermore, the company has worked with JEDEC and the CXL Consortium³ to enhance DRAM-related specifications for industry CXL standards.

³CXL Consortium: An open industry standards group that develops technical specifications for CXL.

SK hynix’s CXL technology overcomes memory scaling challenges by expanding system capacity and bandwidth

Having helped set industry standards and develop relevant specifications, the company has accelerated its CXL development. For this process, SK hynix has identified key criteria to meet customer requirements—cost efficiency, high capacity, optimized bandwidth, and reliability.

First, cost efficiency is paramount in CXL development. To counteract the high cost of CXL controllers, it is crucial to minimize the costs of memory media such as modules. As high capacity is essential to facilitate large-scale data processing, the company determined CXL memory should offer storage two to four times larger than existing DDR products. Furthermore, bandwidth design must be optimized to utilize the full performance potential of CXL modules. Finally, reliability and data integrity must match the high standards of the host memory to earn customer trust.

To meet these criteria, multiple departments across SK hynix are working on making terabyte-scale memory more affordable and efficient. This includes pioneering memory pooling technologies that enable resource sharing among multiple devices and developing NMP⁴ technologies to handle data close to its source. These innovations are poised to deliver significant benefits to applications such as high-performance computing (HPC), in-memory databases, and AI.

⁴Near-memory processing (NMP): A technique that performs computations near data storage, reducing latency and boosting performance in high-bandwidth tasks like AI and HPC.

Through these efforts, SK hynix has been able to advance the development of groundbreaking CXL products which are set to revolutionize the memory field.

SK hynix’s Growing Product Lineup Driving the Future of CXL

Since developing its first DDR5-based CXL sample in 2022, SK hynix has been strengthening its CXL portfolio which includes the innovative CXL Memory Module-Double Data Rate 5 (CMM-DDR5). Leveraging high-speed PCIe Gen5 connections, CMM-DDR5 ensures smooth and rapid data processing. Available with up to 128 GB of storage, CMM-DDR5 also offers the high capacity required for the demands of today’s AI and HPC applications. In addition, the module boasts high levels of power efficiency and security.

Real-world performance tests highlight the transformative impact of CMM-DDR5. The product can expand system bandwidth by up to 82% and capacity by up to 100% compared to systems equipped with only DDR5 DRAM. Tests also showed how AI workloads experienced a 31% increase in token per second performance and that HPC enjoyed a 33% improvement in throughput efficiency. As well as providing outstanding performance, CMM-DDR5 has aligned with both JEDEC and CXL Consortium standards. Currently, the verification and certification of CMM-DDR5 is being carried out by customers as the product moves closer to mass production.

SK hynix’s CXL-based CMM-DDR5 enhances AI and HPC performance

SK hynix’s other CXL solutions include Niagara 2.0, an integrated hardware and software solution that allows multiple hosts to efficiently share large memory pools to minimize unused or underutilized memory. Furthermore, CXL Memory Module-Ax (CMM-Ax), a high-performance memory module optimized for computational workloads, is notable for improving AI and data center efficiency.

Beyond hardware advancements, SK hynix has developed the Heterogeneous Memory Software Development Kit (HSMDK) to maximize the potential of its CXL memory. This software toolkit has even been integrated into Linux’s operating system, further enhancing its accessibility and usability. The development of both hardware and software solutions as well as its standardization efforts highlights how SK hynix is committed to creating a thriving CXL ecosystem.

Rulebreaker Interview: “Thomas” Wonha Choi, Next-Gen Memory & Storage

In an interview with the SK hynix Newsroom, Distinguished Engineer⁵ (DE) “Thomas” Wonha Choi of Next-Gen Memory & Storage discussed the company’s rulebreaking mentality for developing CXL technology. Responsible for standardization efforts with JEDEC and the CXL Consortium and pathfinding next-generation memory such as CXL, Choi spoke about CXL’s development and its future impact.

⁵Distinguished Engineer: Senior SK hynix engineers who excel in their fields and are tasked with solving technical challenges and mentoring the next generation.

<Other articles from this series>

[Rulebreakers’ Revolutions] How MR-MUF’s Heat Control Breakthrough Elevated HBM to New Heights

[Rulebreakers’ Revolutions] How SK hynix Broke Barriers in Mobile DRAM Scaling With World-First HKMG Application

[Rulebreakers’ Revolutions] Innovative Design Scheme Helps HBM3E Reach New Heights

[Rulebreakers’ Revolutions] How SK hynix’s Server DRAM Validation Process Succeeds in a Diverse Server CPU Market

[Rulebreakers’ Revolutions] Flexible & Collaborative eSSD Virtualization Development for Today’s Data Centers

[Rulebreakers’ Revolutions] How SK hynix’s Design Innovations Pushed GDDR7 to New Limits of Speed

The post [Rulebreakers’ Revolutions] How CXL Tech Expands Data Center Memory Scaling Boundaries in the AI Era first appeared on SK hynix Newsroom.

The post [CES 2025 Video] Ride the AI Wave With SK hynix first appeared on SK hynix Newsroom.

SK hynix has returned to Las Vegas for Consumer Electronics Show (CES) 2025, showcasing its latest AI memory innovations reshaping the industry. Held from January 7–10, CES 2025 brings together the brightest minds and groundbreaking technologies from the world’s leading tech companies.

This year, the event’s theme is “Dive In,” inviting attendees to immerse themselves in the next wave of technological advancement. SK hynix is emphasizing how it is driving this wave through a display of leading AI memory technologies at the SK Group exhibit. Along with SK Telecom, SKC, and SK Enmove, the company is highlighting how the Group’s AI infrastructure brings about true change under the theme “Innovative AI, Sustainable Tomorrow.”

Groundbreaking Memory Tech Driving Change in the AI Era

SK hynix is underlining its AI memory leadership at CES 2025

Visitors enter SK Group’s exhibit through the Innovation Gate, greeted by a video of dynamic wave-inspired visuals which symbolize the power of AI. The video shows the transformation of binary data into a wave which flows through the exhibition, highlighting how data and AI drives change across industries.

Continuing deeper into the exhibit, attendees make their way into the AI Data Center area, the focal point of SK hynix’s display. This area features the company’s transformative memory products driving progress in the AI era. Among the cutting-edge AI memory technologies on display are SK hynix’s HBM¹, server DRAM, eSSD, CXL^®2, and PIM³ products.

¹High Bandwidth Memory (HBM): A high-performance memory that vertically stacks multiple DRAM chips with through-silicon via (TSV). HBM3E is the extended version of HBM3, the fourth generation following HBM, HBM2, and HBM2E.
²Compute Express Link^®(CXL^®): A next-generation interface that connects the CPU, GPU, memory, and other components to efficiently enhance the performance of high-performance computing systems.
³Processing-In-Memory (PIM): A next-generation technology that integrates computational capabilities into memory, addressing data movement bottlenecks in AI and big data processing.

The 48 GB 16-layer HBM3E takes center stage at the AI Data Center area

A sample of the company’s pioneering 16-layer HBM3E is prominently showcased at the event, highlighting SK hynix’s leadership in the HBM field. As the world’s largest capacity HBM, the 48 GB 16-layer HBM3E, which is currently under development, is optimized for AI learning and inference. Visitors can also check out DDR5 RDIMM and MCR DIMM, high-speed server DRAM modules tailored for data center environments which offer rapid data processing and large memory capacity.

SK hynix’s cutting-edge AI memory technologies on display

As data storage becomes ever more crucial in the AI landscape, SK hynix is also showcasing its eSSD (enterprise SSD) solutions, including PS1010, PEB110, and PE9010. Designed for data centers, these products offer the reliability and rapid read/write speeds needed to handle the immense data generated by AI applications. Additionally, SK hynix is presenting its groundbreaking CXL technologies, such as CMM-DDR5⁴ and CMM-Ax⁵, which are pushing the boundaries of memory interfaces for enhanced flexibility and scalability in AI systems. Also on display are PIM solutions including GDDR6-AiM and AiMX⁶, a high-speed, low-power accelerator card which performs computational functions, revolutionizing data processing efficiency in AI environments.

⁴CXL Memory Module-DDR5 (CMM-DDR5): A next-generation DDR5 memory module utilizing CXL technology to boost bandwidth and performance for AI, cloud, and high-performance computing.
⁵CXL Memory Module-Ax (CMM-Ax): A high-performance memory module optimized for computational workloads, improving AI and data center efficiency.
⁶Accelerator-in-Memory Based Accelerator (AiMX): SK hynix’s specialized accelerator card tailored for large language model processing using GDDR6-AiM chips.

Visitors can also check out the company’s innovative on-device AI solutions

SK hynix is also showcasing its on-device AI solutions⁷ to highlight the AI service applications of its products. These include LPCAMM2⁸, the mobile NAND solution ZUFS⁹ 4.0, and PCB01—the industry’s highest-performing SSD for on-device AI PCs. Through these displays, SK hynix is underlining how these technologies deliver top performance with power efficiency, empowering a range of applications from mobile AI to consumer electronics.

⁷On-device AI: A technology that enables real-time AI processing directly on devices, enhancing responsiveness and delivering personalized services without relying on cloud-based computation.
⁸Low Power Compression Attached Memory Module 2 (LPCAMM2): LPDDR5X-based module solution that offers power efficiency and high performance as well as space savings. It offers performance levels equivalent to two DDR5 SODIMMs, making it optimized for on-device AI.
⁹Zoned Universal Flash Storage (ZUFS): An advanced version of UFS that improves data management efficiency by organizing data into zones, optimizing transfer between the operating system and storage device.

A Pioneer for a Sustainable Future

As CES 2025 unfolds, SK hynix’s presence once again cements its position as a leader in AI memory solutions. Through its innovative products and visionary approach, the company is demonstrating the essential role memory plays in the growing AI ecosystem. At CES 2025, SK hynix is not just showcasing products, but also offering a glimpse into a future where AI drives sustainable progress across industries. Looking ahead, CEO Kwak Noh-Jung shared the company’s vision. “Driven by constant technological innovation and a robust product lineup tailored for the AI era, SK hynix is on track to becoming a full stack AI solution provider,” he said.

The post SK hynix Showcases AI-Driven Innovations for a Sustainable Tomorrow at CES 2025 first appeared on SK hynix Newsroom.

Global semiconductor demand experienced a remarkable resurgence in 2024, driven by a wave of AI-powered innovation. In response, fabs cranked up production to deliver chips that could handle the immense computing needs of next-generation technologies.

Amid this whirlwind of progress, SK hynix stood out as a market leader. Throughout the year, the company not only overcame challenges but also played a crucial role shaping the future of the semiconductor industry. This article revisits SK hynix’s eight biggest stories of the year with insights from executives, highlighting the company’s progress in AI memory, business investments, sustainability, and more.

1. Investment Milestone: Advanced Chip Packaging Plant Deal in Indiana for Next-Gen AI Memory

SK hynix announced in April that it will invest USD 3.87 billion to establish an advanced packaging facility in Indiana, U.S. The plant will house a leading production line to mass-produce next-generation HBM¹ as well as future generations of chips. Once completed, the project is set to strengthen the U.S. semiconductor supply chain and address the global surge in demand for AI memory products.

¹High Bandwidth Memory (HBM): A high-value, high-performance memory that vertically interconnects multiple DRAM chips using through-silicon via (TSV).

In August, momentum for the project intensified when SK hynix signed a memorandum of terms with the U.S. Department of Commerce, securing access to significant funding and other financial incentives. This initiative underscores the company’s commitment to establishing a new hub for AI technology.

“We are excited to become the first in the industry to build a state-of-the-art advanced packaging facility for AI products in the U.S. This plant will help strengthen supply-chain resilience and advance our goal of providing AI memory chips with unmatched capabilities,” stated CEO Kwak Noh-Jung.

Learn more about the Indiana investment →

2. Pushing Boundaries: Mass Production of the World’s First 12-Layer HBM3E

Since launching the world’s first HBM in 2013, SK hynix has consistently pushed the boundaries of memory performance with each new iteration. In September 2024, SK hynix marked another milestone in its HBM journey as it began mass production of the world’s first 12-layer HBM3E. Boasting the highest capacity of any existing HBM—36 GB—along with industry-leading speed, the 12-layer HBM3E is optimized to meet the growing demands of AI applications.

Commenting on the announcement which became the most-viewed story on the newsroom in 2024, President Justin Kim, head of AI Infra, emphasized the importance of the breakthrough.

“SK hynix has once again broken through technological limits, demonstrating our industry leadership in AI memory. We will continue our position as the No.1 global AI memory provider as we steadily prepare next-generation memory products to overcome the challenges of the AI era,” he said.

Building on this momentum, the company is now developing the 16-layer HBM3E, promising even greater bandwidth and paving the way for further AI advancements.

Read more about the 12-layer HBM3E →

3. Empowering Growth: Yongin Semiconductor Cluster Investment Plan

The Yongin Semiconductor Cluster is poised to become a cornerstone of SK hynix’s long-term growth, as it looks to meet increasing demand for AI memory. In July, the company committed approximately KRW 9.4 trillion (USD 6.7 billion) to the construction of the project’s first fab and business facilities. In total, SK hynix will construct four fabs for next-generation semiconductors and a semiconductor cooperation complex at the site, which will ultimately serve as a global AI semiconductor production base.

Vice President Kim Young-sik, head of Manufacturing Technology, emphasized the cluster’s vital role in the company’s future.

“The Yongin Cluster will be the foundation for SK hynix’s mid- to long-term growth and a place for innovation, while dramatically enhancing South Korea’s semiconductor technology and ecosystem competitiveness,” he said.

The first fab will focus on producing advanced DRAM, including HBM, with an additional “mini-fab²” planned to support small local businesses’ technological development.

²Mini-fab: Research facility equipped with 300mm wafer processing equipment to demonstrate semiconductor materials, parts, and equipment.

Explore the Yongin Semiconductor Cluster plans →

4. Strengthening SSD Portfolio: Developing PEB110 for Data Centers

In September, SK hynix enhanced its SSD portfolio with the development of a high-performance SSD for data centers, PEB110. This groundbreaking SSD builds on the company’s 238-layer 4D NAND technology, offering twice the performance and over 30% greater power efficiency than the previous generation. As demand for cutting-edge SSD solutions accelerates in AI and big data applications, PEB110 is designed to meet the needs of large-scale cloud computing and data centers.

“Looking ahead, we are on track to proceed with customer qualification and volume production to solidify our position as the No. 1 global AI memory provider in the ever-growing SSD market for data centers,” Ahn Hyun, head of the N-S Committee, noted.

Following the company’s success with ultra-fast DRAM products, the announcement solidifies its position as a leader in NAND solutions.

Discover more details about the PEB110 →

5. Revolutionizing Storage: Mass Production of the Industry’s First 321-layer NAND

Continuing its track record of innovation, SK hynix announced in November it had begun mass- producing the world’s first 321-layer 4D NAND flash. The achievement, which marks the first time a company produced a NAND flash solution with more than 300 layers, follows SK hynix’s significant breakthrough in stacking technology. Delivering enhanced speed and power efficiency compared to the previous generation, the 321-layer NAND flash meets the growing demands of AI applications.

The accomplishment strengthens the company’s position in the AI storage market, particularly in SSDs for AI data centers and on-device AI applications.

“SK hynix is on track for continued growth by adding a perfect portfolio in the ultra-high performance NAND space on top of the DRAM business led by HBM,” said Vice President Jungdal Choi, head of NAND Development.

Find out more information about the 321-layer NAND →

6. Sustainable Success: Winning the IFR Asia Award for Innovative Bond

SK hynix picked up a prestigious IFR Asia Award in April, winning the Best ESG Bond prize for its innovative USD 2.5 billion triple-tranche combination trade. Featuring a sustainability-linked note that targets a reduction in greenhouse gas emissions and a green bond that funds environmental projects, the triple-tranche bond supports the company’s efforts to reach its sustainability goals.

“The green bond, in particular, funds environmental innovations such as increased product energy efficiency, improved wastewater management, and pollution reduction,” said Hyungmo Yang, head of Financial Management. “Going forward, the bond’s proceeds will continue to help us meet our environmental goals.”

By integrating sustainability into its financial practices, SK hynix is addressing the rising demand for investments that deliver both economic returns and environmental benefits.

Read more on SK hynix’s win →

7. Enhancing Shareholder Value: 25% Dividend Hike in New Return Program

In November, SK hynix demonstrated its commitment to delivering value to shareholders by announcing a 25% increase in the annual fixed dividend—the minimum dividend per share that the company plans to pay out every year. The increase, which takes the dividend up to KRW 1,500 (USD 1.06) a share from KRW 1,200, is part of a new shareholder return program for the 2025–27 period.

The enhanced program aims to meet the expectations of shareholders who have supported the company on its path to becoming the global leading AI memory provider.

“Our goal is to promote the company’s long-term prosperity together with our shareholders by carrying out the policies for shareholder return that matches the company’s growth and stability of the financial structure,” Vice President and Chief Financial Officer Kim Woohyun commented.

Separately, the company also unveiled an initiative aimed at increasing corporate value by enabling quick decision-making in response to market changes.

Learn more about the shareholder return program →

8. Commitment to ESG: Unveiling the Recycled Materials Roadmap

As part of its ongoing commitment to ESG, SK hynix introduced a bold roadmap in February to increase the proportion of recycled and renewable materials in semiconductor production. Through this industry-first mid- to long-term plan, the company will first target replacing essential metals for semiconductors with recycled materials before focusing on recycled plastics.

“As a company that takes ESG management seriously, we intend to actively participate in the establishment of a global circular economy,” said Vice President Junho Song, head of Advanced Quality & Analysis. “While implementing this roadmap, we will work together with all stakeholders in the semiconductor supply chain, including customers and suppliers, to achieve practical results.”

This forward-looking roadmap not only highlights SK hynix’s recent success in sustainable innovation but also reinforces its vision for the future. As the company leads the charge in integrating sustainability with technological advancement, it sets a compelling example of how the semiconductor industry can shape a greener, more resilient future.

See the full sustainable materials roadmap →

Continuing the Journey of Excellence in 2025

In 2024, SK hynix achieved new heights through technological breakthroughs, strategic investments, and sustainable innovation. These accomplishments not only solidified the company’s leadership in AI memory but also positioned it at the forefront of emerging fields. Looking ahead to 2025, SK hynix is set to continue its journey of excellence, shaping the next generation of cutting-edge technology and powering the innovations of tomorrow as a full stack AI memory provider.

The post Executive Insights on SK hynix’s Top 8 Stories of 2024 first appeared on SK hynix Newsroom.