Speeding towards the future of innovation, teams at SK hynix are often focused on the years to come – rather than on those that have passed. It is milestone moments like the end of a decade that offer us a unique opportunity to pause and reflect on our accomplishments and achievements.

As the decade draws to a close, SK hynix takes a look back at the 10 breakthrough moments in chronological order that defined it – and that will continue to define our future.

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1. Full-scale mass production of 16nm NAND flash(November 2013)

In order to actively respond to the needs of its customers, SK hynix started the full-scale mass production of 16nm 64Gb (Gigabit) MLC (Multi Level Cell) NAND Flash. This innovation brought the industry’s thinnest process technology and was more cost competitive due to its smaller chip size. The announcement began SK hynix’s reputation to bring forth a competitive NAND portfolio with high reliability and endurance.

2. Development of the world’s first next-generation mobile memory LPDDR4(December 2013)

At the end on 2013, SK hynix took large steps to heighten its technology leadership by developing the world’s first 8Gb LPDDR4 product with 20nm-class technology. LPDDR4 was the next generation mobile DRAM interface, which was on the process of standardization at that time, and gave customers ultrahigh speed and low power consumption. In fact, the product ran two times faster and does so at lower voltage than of its existing LPDDR3.

3. Development of the world’s first, highest density 128GB DDR4 module(April 2014)

SK hynix made a significant advancement in the ultrahigh density server market with the announcement that it had developed the world’s first and highest density of 128GB (Gigabytes) module based on 8Gb DDR4 using its advanced 20nm-class technology. This module has double density compared to the company’s existing 64GB by taking advantage of TSV (Through Silicon Via) technology. This product helped cement the company’s reputation on providing premium DRAM with high density, ultrahigh speed, and low power consumption.

4. Development of the world’s highest density 16GB NVDIMM(October 2014)

In late 2014, SK hynix announced that it had developed the world’s highest density 16GB NVDIMM (Non-Volatile DIMM) based on 4Gb DDR4 using its advanced 20nm-class technology. By combining DRAM, NAND Flash and the controller in a single module, this product was able to send DRAM data to NAND Flash, whose density was two times bigger than the DRAM, in an unanticipated power loss, thus saving and restoring data safely. Ahead of mass production, SK hynix provided samples to several customers and the product got attention from corporations developing servers and operating systems in need of higher stability.

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5. Launch of the world’s first, highest density 8GB LPDDR4X(January 2017)

SK hynix launched 8GB LPDDR4X mobile DRAM, the world’s highest density in the LPDDR4X standard, using its state-of-the-art dual channel 16Gb chips aimed to suit the upcoming flagship smartphone lineups. This technology allowed mobile device users to maximize their experiences and was expected to be included in various applications such as high-end laptops and automotive electronics.

6. Introduction of the world’s highest 72-layer 3D NAND Flash(April 2017)

In 2017, SK hynix unveiled the industry’s first 72-Layer 256Gb 3D NAND Flash based on its TLC (Triple-Level Cell) arrays and own technologies. This innovation stacked 1.5 times more layers than the already widely available 48-Layer 3D NAND, achieving 30% more productivity. 3D NAND is widely used in AI (Artificial Intelligence), big data and cloud storage. With this achievement, SK hynix secured the industry’s finest 3D NAND product portfolio, solidifying its business competence in NAND memory solutions.

7. Launch of the world’s first “CTF-based 96-layer 4D NAND Flash”(November 2018)

SK hynix was the first in the industry to combine the 3D CTF (Charge Trap Flash) design with PUC (Peri. Under Cell) technology. This 96-Layer 512Gb “CTF-based 4D NAND Flash” based on its TLC arrays reduced more than 30% of chip size and increased bit productivity per wafer by 49% compared to the company’s 72-layer 512Gb 3D NAND. It also provided a 30% higher write and 25% higher read performance. This achievement marks a milestone for the company’s NAND Flash business as a platform for developing future products.

8. Demo of the industry’s first ZNS-based SSD solution for data centers(March 2019)

SK hynix began 2019 with a strong first quarter when the company demonstrated the industry’s first ZNS (Zoned Namespaces) SSD solution at the 2019 OCP Global Summit in San Jose, CA. The ZNS SSD boasted 30% improvement in speed and reliability compared to the existing SSD, as well as more than four
times longer lifetime, making it suitable for the next-gen data centers. SK hynix plans to launch commercial products in the first half of 2020.

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9. Mass production of the world’s first 128-layer 4D NAND(June 2019)

In another major milestone this year, SK hynix started mass-producing world’s first 128-Layer 1Tb (Terabit) TLC NAND, the highest vertical stacking and highest density for a TLC NAND Flash chip. This feat was accomplished only eight months after the company previously announced the 96-Layer 4D NAND last year. The new NAND Flash chip has significantly improved profitability with 40% higher productivity and 60% better investment efficiency, targeting high-capacity mobile and enterprise SSD customers.

10. Development of the world’s fastest High Bandwidth Memory, HBM2E(August 2019)

Earlier this year, SK hynix developed the world’s fastest high bandwidth memory, HBM2E. As the DRAM technology here supports 460GB per second (3.6Gbps per Pin) data processing speed performance, the product is expected to be adopted by high-end machine learning, supercomputers and artificial intelligence. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity compared to the previous HBM2. It will strengthen SK hynix’s leadership in the premium DRAM market.

If we had to sum up the progress of the memory industry – and the continued improvement of SK hynix’ products – over the past 10 years, we would say: smaller, better, faster. From 2013’s mass production of the 16nm NAND flash to 2017’s introduction of the world’s highest 72-layer 3D NAND Flash, to 2019’s development of the world’s fastest HBM2E, we’ve delivered reduced chip sizes, ultrahigh speeds, and higher-quality experiences to our clients around the world.

While no one knows for certain what the next decade will bring, we certainly can say that the innovations of SK hynix will be at its core.

The post A Decade of Innovation: SK hynix Looks Back at its Top Advancements 10 Years of Trailblazing & Industry “Firsts” first appeared on SK hynix Newsroom.

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Technological Competitiveness to Lead the 4th Industrial Revolution

Featuring ultra-high speed, low-power consumption, and a high capacity level, DDR5 is the optimal DRAM memory for next-generation systems such as Big Data, Artificial Intelligence (AI) and Machine Learning.

Following the 1Ynm 8Gbit (Gb) DDR4, SK hynix started delivering its 16Gb DDR5, where the same micro process was applied as DDR4, to a major chipset manufacturer in November 2018. The new DDR5 DRAM supports a data transfer rate of 5200Mbps, about 60% faster compared to 3200Mbps of the previous generation. Also in last February, SK hynix gave a more detailed description of its 16Gb DDR5 memory chip at the International Solid-State Circuits Conference 2019 (ISSCC 2019) in San Francisco, USA, showing that the product can technically support up to 6400Mbps.

DDR5 Maximizes Efficiency in Performance

Compared to its predecessor, the DDR4, DDR5’s power consumption has been reduced by 30%, while also delivering 60% faster data transfer speed. It supports a transfer rate capable of processing 41.6GByte, equivalent to 11 full-HD resolution movies, in just one second.

When SK hynix succeeded in developing DDR5 DRAM back in November 2018, the company explained that the number of the memory banks doubled from 16 to 32, in accordance with the JEDEC DDR5 standards. Burst length, the number of bursts for data transfer, also doubled from 8 to 16. At the same time, with an Error Correcting Code (ECC) incorporated in this latest DRAM, a new level of high-capacity system reliability was achieved.

Using new advanced technologies to obtain ultra-high-speed and reliable operating performance, this DDR5 boasts highly improved data processing speed, reinforcing technological competitiveness and leadership of SK hynix.

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A DRAM for the Next-Generation Memory Market

Despite uncertainties in the demand outlook for 2020, TrendForce, a industry market research firm, expects the semiconductor market to recover steadily thanks to AI, 5G and automotive technologies fueling a rise in demand. TrendForce also predicts the global telecom sector to be developed around 5G during 2020, with more 5G devices to be introduced to the market. Even though it’s still at the early stage, advantages of DDR5 over DDR4 will “get noticed” by customers in the DRAM market in 2020, according to TrendForce.

Another market research institute, International Data Corporation (IDC), also said that demand for DDR5 was expected to rise from 2020, accounting for 25% of the total DRAM market in 2021 and 44% in 2022. SK hynix plans to start the mass-production of its DDR5 memory chip from 2020, while continuing research and development on DRAM technologies to lead the next generation of semiconductors.

The post DDR5 Opens up a Whole New DRAM World first appeared on SK hynix Newsroom.

hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) announced the 4Gb (Gigabits) mobile DDR SDRAM is now supported on Intel’s ‘Moorestown’ platform for MID (Mobile Internet Device) applications.

This high density memory device packs twice the storage capacity over current 2Gb mobile memory solutions and is offered in small form factor packages such as MCP (Multi Chip Package) and PoP(Package on Package). It boasts maximum operating speed of 400Mbps (Megabits per second), processing up to 1.6GB (Gigabytes) of data per second with a 32-bit I/O.

The product complies with the JEDEC standards, and is well suited for next generation mobile applications such as MID, NetBooks and High-end smart-phones requiring high density, high speed memory and featuring low power consumption. High bandwidth memory functions such as high speed downloads, graphics and video processing will be well supported by this product.

The company plans to start mass production of this product in the third quarter of 2009, to satisfy the increasing demand for high density and high performance memory in mobile applications.

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About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) , Flash memory chips (“NAND Flash”) and CMOS Image Sensor (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.

Media Contact

CORPORATE COMMUNICATIONS

Assistant Manager
Seong-Ae Park
Phone: +82.2.3459.5325
Fax: +82.2.3459.5333
E-Mail: seongae.park@hynix.com

The post hynix Introduces 4Gb Mobile DDR SDRAM Supported on Intel’s Moorestown Platform first appeared on SK hynix Newsroom.

hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) today announced it has developed the industry’s fastest 185MHz 512Megabit mobile DDR SDRAM with ECC (Error Correction Code). The built in ECC, similar to that used in NAND Flash, ensures data integrity while reducing current consumption by almost 50%.

At 185MHz clock speed, the fastest in the industry, a throughput of up to 1.5Gbytes of data per second can be attained with a 32-bit I/O. The ECC feature in this product allows for the extension of the refresh interval which in turn significantly reduces power consumption. Additionally, the 512Mb ECC Mobile DDR offers the traditional low power features necessary for a wide range of mobile applications. These features include reduced power supply voltage, temperature compensated self refresh (TCSR), partial array self refresh (PASR), and deep power down (DPD) modes.

hynix’s 512Mb ECC mobile DDR is manufactured on the Company’s leading edge 80nm process technology and is offered in JEDEC standard pin-out and packages.

Mr. Kim Yong Tark, hynix VP of Mobile Division says “As handheld products such as mobile phones require higher density memory components, the current consumption of mobile DRAMs has become a very critical issue for OEMs. hynix’s ECC mobile DDR meets the system designers’ need for high density, data integrity and very low power consumption extending battery life.”

hynix plans to assemble the 512Mb ECC mobile DDR with NAND flash and offer a multi-chip package (MCP) or a package-on-package (POP) stack.

Mass production of the products is slated to begin at the second half of 2007, with samples scheduled for early third quarter. Preliminary technical specification is available upon request.

About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) and Flash memory chips to a wide range of established international customers. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.

The post hynix Introduces Industry’s Fastest 185MHz 512Mb Mobile DDR SDRAM with ECC first appeared on SK hynix Newsroom.

In preparation for IDF Spring 2003, hynix Semiconductor Inc. today announced its 256Mb DDR400 has been validated by Intel and is available for sample quantities and mass production.

In addition, hynix is currently sampling its 512Mb DDR400 device that it also expects to pass Intel validation testing within a short time frame. According to Farhad Tabrizi, Vice President of Worldwide Marketing at hynix, the DDR400 device is in full compliance with Intel specifications. hynix is currently sampling and shipping production quantities of its 256Mb DDR400 to major OEM’s. Tabrizi said, “hynix projects DDR400 to represent more than 30% of DDR demand by Q4 2003. In addition, this product will benefit customers with its higher performance and cost competitiveness.”

hynix expects a fast transition to DDR400 with over 50% of consumer desktop PC’s adopting the high-speed memory by second half of 2003. By focusing on developing products such as DDR400 and DDR II, hynix will firmly establish its leadership position in the high-speed DDR market. hynix will enhance its market position with its planned offering of DDR II in 2004.

The post hynix to Rollout 400Mhz DDR to Coincide Intel Springdale Launch first appeared on SK hynix Newsroom.

hynix Semiconductor Inc. announced a successful Intel validation and launched mass production of a high-speed 333Mbps 512Mb DDR SDRAM.

The Intel Corporation validation of the hynix high-speed 333Mbps 512Mb DDR SDRAM is a first for the Korean DRAM industry. “This validation from Intel demonstrates a confidence in the performance of our 512 Mb DDR SDRAM,” said Farhad Tabrizi, Vice President of Worldwide Marketing at hynix. “At hynix, we continue to leverage our advance technology and production capabilities to deliver timely products that give our customers an edge in a highly competitive marketplace. We expect this validation to have a very positive impact on future DDR SDRAM sales.”

hynix has applied its 0.13-micron Prime Chip manufacturing technology to the development of the 512 DDR SDRAM. The chipset has an external power source of 2.5V, TSOP/FBGA packaging and can operate at the highest speed of DDR 333. hynix offers a broad range of DDR SDRAM products to meet the diverse needs of desktop, portable, networking and graphics applications. The high-speed 512Mb DDR SDRAM meets the demand for high-bandwidth and low latency while increasing the memory density needed for future high-end desktop, server and mainframe applications. Initially, the 333Mbps 512Mb DDR SDRAM will be used in 2 Gigabyte (GB) registered DIMM modules, providing higher memory density needed for server applications, and 1GB Small Outline DIMM’s for high-performance notebook application. hynix expects the mass production of 512Mb DDR SDRAM will enhance its market leadership and add world class standing to its product offerings.

The post hynix Receives Validation from Intel for ITS 333Mbps High-speed 512Mb DDR SDRAM first appeared on SK hynix Newsroom.

hynix Semiconductor Inc. (hynix, www.hynix.com), announced today that it has successfully developed 512-Mb DDR SDRAM (double-data-rate synchronous dynamic random access memory) manufactured with cutting-edge 0.10-micron technology.

hynix applied its landmark Golden Chip semiconductor manufacturing technology to the mass production 0.10-micron technology products without additional investment in its fabrication facilities. Golden Chip follows the company’s Blue Chip (0.15-micron) technology and Prime Chip (0.13-micron) technology. The company estimates the use of 0.10-micron technology reduces overall investment requirements by 50% when compared to its competitors.

The new 512 Mb DDR SDRAM memory is developed to meet market demand for PC and server products. The new product is compatible with DDR 266, DDR 333, and DDR 400. hynix will implement the integrated design technology and manufacturing process in its plants in Ichon, Choongju, and Eugene, Oregon. hynix is planning to launch mass production of 512 Mb DDR SDRAM by the end of the year. Production of 256 Mb and 1 Gb DDR SDRAM using Golden Chip technology will occur in the first half of next year. hynix expects the successful development of its Golden Chip technology to assure it maintains its role as a leader in the memory chip market.

The post hynix Develops 0.10-micron 512 MB DDR first appeared on SK hynix Newsroom.

hynix Semiconductor Inc. today announced that its 128MB and 256MB DDR (Double Data Rate) SDRAM, JEDEC-standard PC2700 modules have received full approval from VIA Technologies, Inc., in its core logic chipset KT333.

The 128MB and 256MB unbuffered DDR DIMM SDRAM has a 333Mhz data rate with a bandwidth of up to 2.7GB/s. This approbation further strengthens hynix’s presence in the high-speed main memory market and continues to demonstrate the company’s commitment to the development and production of the latest components and modules for advanced memory product applications.

The 128MB and 256MB DDR DIMM is organized with 128Mb x 8 components and is manufactured using a 0.18-micron process technology. However, hynix is quickly transitioning from a 0.18 to a 0.15-micron geometry, utilizing hynix’s patented ‘Blue Chip’ process. This process increases the die per wafer and enables hynix to provide cutting-edge memory products at cost-competitive prices, in addition to providing the customer a better solution with faster system performance.

Farhad Tabrizi, Vice President of Worldwide Memory Marketing for hynix, reiterated his company’s commitment to satisfying customer needs with leading-edge product. ” This clearly demonstrates our leadership and commitment to the DRAM market. We anticipate that higher speed DDR products will be the differentiating point for our end customer product offerings.” The 128MB and 256MB, used primarily in desktop applications, is produced at hynix’s Ichon, Korea fabrication facility and is available now with volume production beginning in March.

The post hynix Semiconductor Receives Approval from VIA for ITS 128MB and 256MB DDR SDRAM first appeared on SK hynix Newsroom.

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SAN JOSE, Calif., December 18, 2001

hynix Semiconductor Inc. today announced it is sampling a 128-Mb DDR SDRAM (double-data-rate synchronous dynamic random access memory) with a 4Mx32 configuration and a 375 MHz clock speed―the fastest speed available in the industry for a DDR SDRAM device.

Manufactured with 0.16-micron technology, the new device is ideal for memory-intensive graphics applications in desktop and portable computing, as well as high-end consumer electronics. The new DDR SDRAM not only reduces power consumption by more than 40 percent, but it also increases memory capacity and efficiency, while doubling the performance of the memory sub-system.

As the pioneer of DDR technology, hynix continues to lead the industry’s transition from SDRAM to DDR SDRAM with a comprehensive product line that now includes the fastest 128-Mb device available in the industry. New Device Underscores hynix Viability in DDR Market “The introduction of this industry-leading device once again underscores hynix’s strong technology leadership in the DRAM market and our ability to meet the rapidly changing demands of today’s memory-hungry applications,” said Farhad Tabrizi, vice president of worldwide memory marketing at hynix. “We pioneered the DDR architecture, and this introduction demonstrates our continued viability as a key player in this highly competitive market.”

Two concurrent market trends have led to a strong industry need for a memory architecture that combines high speed and low-power consumption. The first is the demand for memory functionality resulting in the introduction of more powerful computer graphics. The second is the rapidly growing popularity of portable computing and communications devices, as well as other high-end consumer electronic appliances. Increasingly, it is the right combination of microprocessor and memory that ensures optimum system performance. The DDR architecture, pioneered by hynix, was designed to meet this critical industry need for a faster, less costly and less power-hungry DRAM.

Pricing and Availability Samples of the new DDR SDRAM device, part number HY5DU283222F, are currently available with pricing beginning at $10.00. It is available in an extremely cost-effective, small form factor, chip scale FBGA package (12 mm x 12 mm, 144-ball FBGA with 0.8 pin pitch). Production volumes are expected to be available in the first quarter of 2002

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