This never-ending surge in data is putting new demands on memory technology. So far, DRAM and NAND have scaled to meet these demands. However, additional memory technologies need to be explored to keep pace with the data increase.

In this EE Times column, Joongsik Kim, technical leader of the future memory research team at SK hynix, provides his insights on three new technologies — STT-MRAM, Ferroelectric Memory and ReRAM – that could play a role in handling higher levels of data. These technologies have the potential to deliver higher performance and capacity with less energy use, but they also have limitations that must be overcome to realize their full potential.

SK hynix is focused on advancing DRAM and NAND as well as these new emerging technologies so that society can benefit from new data-driven applications. To read the full EE Times column, please click on this link – Opportunity and Challenge for Emerging Memory.

The post Opportunity and Challenge for Emerging Memory first appeared on SK hynix Newsroom.

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Seoul, KOREA, March 7, 2003

hynix Semiconductor Inc. today announced the successful introduction of its commercially applicable FeRAM (Ferroelectric RAM), a non-volatile, low power, high-density and high speed memory ideal for next-generation mobile and SoC (System on Chip) applications.

Introduced in 4Mb and 8 Mb densities and manufactured on hynix’s advanced .25um process technology, the FeRAM samples operate at 3.0-Volts with data access time of 70 nanoseconds and are capable of 100 billion read/write repetitions. Unlike existing products that are composed of two transistors and two capacitors, FeRAM achieves mega-level density by adopting a one transistor, one capacitor (1T1C) cell structure and can operate on lower than 1.0-Volt, exceeding traditional FeRAM’s limitations. In addition, by applying new circuit concepts and ferroelectric materials BLT (Bismuth Lanthanum Titanate), hynix has dramatically improved FeRAM’s stability and device reliability while shrinking its die size. Using the newly developed technology, FeRAM is expandable to 64Mb without additional development costs. hynix expects FeRAM to be the main memory product in embedded applications. The 4 and 8 mega FeRAM opens the door to higher performing 64 mega-level products which hynix plans to develop and mass produce.

hynix plans to firmly establish its presence in the future FeRAM market. hynix has applied for more than 150 US patents for FeRAM Technologies. The company expects rapid market penetration of FeRAM in mobile and multimedia applications including handsets, PDA’s, smart phones and smart cards and projects the FeRAM market to reach 10 billion dollar scale by 2006. hynix will present the details of its FeRAM technical features at the 15th ISIF (International Symposium on Integrated Ferroelectrics) Conference being held in Colorado Springs, Colorado, on March 10th.

The post hynix Introduces World’s First Commercially Applicable Mega-level FeRAM, a Major Industry Milestone first appeared on SK hynix Newsroom.

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Seoul, Korea, May 4, 2001

hynix Semiconductor Inc. (HSI; formerly Hyundai Electronics Industries [HEI]) announced yesterday that it had developed a 1M ferroelectric RAM (FeRAM), the next-generation memory semiconductor. Operating in the 3V-to-5V range at the speed of 100ns (1ns = 1/ 1 billion second), the 1M FeRAM utilizes 0.35-micron process technology. Equally significant, instead of two transistors and capacitors respectively, this chip consists of only one transistor and capacitor apiece, significantly reducing chip size. In addition, the chip uses SBT (Strontium Bismuth Tantalite) and other newly developed substances as ferroelectric material. To date, commercial FeRAMs have been hindered by uncertain product reliability. This highly stable 1M FeRAM from hynix represents an important step in the commercialization of a high-capacity chip. FeRAM is a non-volatile memory that combines the capacity of DRAM, the speed of SRAM, and the data retention capabilities of flash memory. Compared with flash memory and EEP ROM (Electrically Erasable & Programmable Read Only Memory), FeRAM uses less voltage during operation and writes data 1,000 times faster. Currently, only low-capacity FeRAMs (e.g., 64K and 256K) are produced by a small number of chip makers for application in lower-capacity memory and complex logic chips. Aimed at the mobile phone and smart card markets, this new 1M device from hynix is expected to meet the rapidly growing demand for FeRAM. Moreover, Hynix will continue to develop next-generation, high-integration FeRAM products in order to further strengthen its position in the FeRAM market. ### About hynix Semiconductor Inc. hynix Semiconductor Inc. (hynix) of Ichon, Korea, is an industry leader in the development, sales, marketing and distribution of high-quality semiconductors (including DRAM, SRAM, Flash memory and system IC devices), telecommunications and liquid crystal displays. The Semiconductor Group at hynix is the world’s largest DRAM supplier with 11 semiconductor manufacturing facilities worldwide and production capacity of over 300,000 wafer starts per month. In addition, hynix is expanding its system IC business unit with leading technology and added deep-submicron foundry services. hynix continues to broaden its overall semiconductor presence with a goal of becoming the global semiconductor market leader. Based in Korea, hynix maintains development, manufacturing, sales and marketing facilities strategically located worldwide. More information on hynix Semiconductor Inc. and its products is available from the company’s web site at www.hynix.com.

The post hynix Semiconductor Develops 1M FeRAM first appeared on SK hynix Newsroom.

The company expects to soon stabilize features and achieve product reliability, thereby enabling the commercialization of FeRAM earlier than originally planned. Hyundai plans to deliver samples to its business partners in third quarter of this year. “Fe RAM is emerging as the next-generation memory semiconductor,” said Chong Sup Park, president and chief executive officer of Hyundai Electronics Industries. “FeRAM is a non-volatile memory that combines the capacity of DRAM, the speed of SRAM, and the data retention capabilities of flash memory. Compared with flash memory and EEP ROM (Electrically Erasable & Programmable Read Only Memory), FeRAM uses less voltage during operation and writes data 1,000 times faster.” The 64K FeRAM operates at 2V power, and the 256K FeRAM can be used in the 3V-to-5V range by stabilizing the standard voltage. Targeted at the mobile phone, personal digital assistant (PDA), smartphone, and smartcard markets, Hyundai’s FeRAM devices are deemed suitable replacements for memory products currently used in portable electronic devices. “Hyundai’s FeRAM offers several key features,” said Park. “It is made of Strontium Bismuth Tantalite to enhance product reliability. By employing an innovative memory cell technology that requires no internal booster circuit, power consumption is significantly reduced. The new cell design is also effective in making the chip smaller. This technology will continue to be used in development of a hybrid FeRAM, a next-generation, high-integration FeRAM product which Hyundai is now developing in order to gain long-term leadership of the entire FeRAM market.” These high-performance FeRAM products are also cost-effective for Hyundai to produce because they are compatible with the company’s current DRAM production process. Internal market analyses show the growing market for FeRAM is expected to reach 1.2 billion units by the year 2002. The market is forecast to increase rapidly over the next several years and should be a significant memory player over the next few years. Applications expected to take advantage of FeRAM’s speed, density, and non-volatility include Desktop PCs, Mobile (laptop) Systems, Communications Devices, and Gaming Systems. Glossary EEP ROM: (Electrically Erasable & Programmable Read Only Memory) This memory device has features of both ROM and RAM. It retains data even if power is turned off, and information can be input or output when 5V power is supplied. About Hyundai ElectronicsTM Hyundai Electronics is an industry leader in the development, manufacture, sales, marketing, and distribution of high-quality Semiconductors (including DRAM, SRAM, Flash memory, and System IC devices), Telecommunications, and Liquid Crystal Displays. In addition, Hyundai? is expanding its System IC business unit with leading technology and added deep-submicron foundry services to strategically broaden its overall semiconductor presence and achieve its goal of leading the global semiconductor market. The Semiconductor Group of Hyundai Electronics is the world’s largest DRAM supplier with eleven semiconductor manufacturing facilities world wide, and production capacity of over 300,000 wafer starts per month. Based in Korea, Hyundai maintains development, manufacturing, sales and marketing facilities strategically worldwide. Hyundai Electronics America (HEA) is a U.S. subsidiary of Hyundai Electronics Industries Co., Ltd. HEA is headquartered at 3101 North First Street, San Jose, CA 95134. More information on Hyundai Electronics America and its products is available from the company’s web site at http://www.hea.com.

The post Hyundai Electronics Develops New Ferrolectric RAM (FeRAM) first appeared on SK hynix Newsroom.