SK hynix is showcasing its cutting-edge AI memory technologies at GPU Technology Conference (GTC) 2025 held in San Jose from March 17–21.

Hosted annually by NVIDIA, GTC is one of the world’s leading AI conferences. This year’s event, held under the theme “What’s Next in AI Starts Here,” features over 1,000 sessions and 300 exhibitions highlighting the latest advancements and solutions in AI technology.

Visitors gather to see the latest AI memory innovations at SK hynix’s booth

At the conference, SK hynix is presenting a booth under the theme “MEMORY, POWERING AI and TOMORROW,” showcasing memory products that accelerate AI innovation. These products are displayed in four sections: AI/Data Centers (DC), HBM¹, On-Device, and Automotive. In particular, the HBM section debuted a model of the 12-layer HBM4, which is currently under development, demonstrating the company’s overwhelming technological leadership.

¹High Bandwidth Memory (HBM): A high-value, high-performance product that significantly enhances data processing speeds by vertically stacking multiple DRAM chips, surpassing the capabilities of traditional DRAM. HBM has evolved through six generations, starting with the original HBM and followed by HBM2, HBM2E, HBM3, HBM3E, and HBM4.

The AI/Data Centers section features high-performance eSSDs, DIMM solutions, and more

The AI/DC section features enterprise SSDs (eSSDs) optimized for large-scale data processing and storage, including PEB110, PS1010, and PEB9010, alongside data center DIMM² products such as DDR5 RDIMM and MRDIMM. The world’s highest-specification graphics memory, GDDR7³, is also on display. Additionally, next-generation AI memory products are drawing attention, including CMM-DDR5⁴, a DDR5-based CXL⁵ product, and SOCAMM⁶, a low-power DRAM module for AI servers. The company plans to begin mass production of SOCAMM in line with the market’s emergence, leveraging its strengths in LPDDR5X⁷ and server memory to expand its AI memory portfolio.

²Dual In-line Memory Module (DIMM): A module in which multiple DRAM chips are combined on a substrate.
³Graphics DDR (GDDR): A standard specification of graphics DRAM defined by JEDEC and specialized for processing graphics more quickly. It is now one of the most popular memory chips for AI and big data applications.
⁴CXL Memory Module-DDR5 (CMM-DDR5): A next-generation DDR5 memory module utilizing CXL technology to boost bandwidth and performance for AI, cloud, and high-performance computing.
⁵Compute Express Link (CXL): A next-generation interface that efficiently connects CPUs/GPUs and memory in high-performance computing systems, supporting large-scale, ultra-fast computations. Applying CXL to existing memory modules can expand capacity by more than 10 times.
⁶Small Outline Compression Attached Memory Module (SOCAMM): A next-generation memory module based on LPDDR5X, featuring a smaller form factor than traditional server memory modules while offering higher power efficiency.
⁷Low Power Double Data Rate 5X (LPDDR5X): Low-power DRAM for mobile devices, including smartphones and tablets, aimed at minimizing power consumption and featuring low voltage operation. LPDDR5X is the seventh-generation LPDDR product.

The company unveiled a model of its HBM4 at GTC 2025

The highlight of the HBM section is undoubtedly HBM4. Unveiled for the first time in the world at GTC 2025, the in-development HBM4 is set to offer significantly enhanced base die performance and vastly reduced power consumption. Following the introduction of this latest AI memory solution, HBM4, SK hynix will further strengthen its industry leadership. Additionally, the company is showcasing the industry’s best-performing and highest-capacity 12-layer HBM3E available today, alongside NVIDIA’s GB200 Grace^TM Blackwell Superchip.

The On-Device section features various products tailored for on-device and AI applications, including LPDDR6 and LPCAMM2

Visitors to the On-Device section can explore the company’s high-performance, low-power memory solutions designed for on-device data processing and AI computing. These include LPDDR6, LPCAMM2⁸, PCB01, and ZUFS⁹ 4.0.

⁸Low Power Compression Attached Memory Module 2 (LPCAMM2): LPDDR5X-based module solution that offers power efficiency and high performance as well as space savings. It offers performance levels equivalent to two DDR5 SODIMMs, making it optimized for on-device AI.
⁹Zoned Universal Flash Storage (ZUFS): An advanced version of UFS that improves data management efficiency by organizing data into zones, optimizing transfer between the operating system and storage device.

Various vehicle memory solutions are also on display in the Automotive section

Meanwhile, at the Automotive section, SK hynix is presenting a range of vehicle memory solutions aimed at advancing the era of autonomous mobility. These include HBM2E, LPDDR5, UFS¹⁰ 3.1, and Gen4 SSD tailored for the automotive industry.

¹⁰Universal Flash Storage (UFS): A breakthrough type of flash memory that can simultaneously read and write data. Due to its low-power consumption, high-performance and reliability, UFS is widely applied in mobile devices.

As well as its exhibition at GTC 2025, SK hynix has also prepared a virtual booth. Online visitors can browse a web brochure detailing the company’s achievements in 2024 and information on key products including server solutions, the high-capacity SSD PS1012, GDDR7, and CMM-DDR5. Furthermore, there are also videos of innovative products such as HBM, 1c DDR5¹¹, and automotive memory, emphasizing SK hynix’s technological leadership.

¹¹1c DDR5: A 16 gigabit DDR5 DRAM built using the 1c node, the sixth generation of the 10 nm DRAM process. The 10 nm DRAM process was developed in the order of 1x-1y-1z-1a-1b-1c. In October 2024, SK hynix became the first in the world to successfully develop the 1c DDR5 DRAM.

Jungsoo Park of HBM Product Planning presenting on the importance of HBM in the AI era

The company also shared its insights with industry professionals during the event’s presentation sessions. Technical Leader Jungsoo Park of HBM Product Planning presented on “HBM: Backbone of High-Performance Computing and AI,” highlighting the evolution of HBM technology and SK hynix’s unrivaled leadership in the field.

Kihong Kim of Mobility Business giving a talk on SK hynix’s automotive memory

Meanwhile, in an online session titled “Preparing for the Future: Automotive Memory and Storage Requirements”, Technical Leader Kihong Kim of Mobility Business introduced the characteristics of memory and storage in the automotive industry and SK hynix’s related strategic approach.

As AI technology continues its rapid evolution, the role of memory is becoming increasingly vital. At GTC 2025, SK hynix is underlining its AI memory leadership by introducing solutions optimized for the AI era. Looking ahead, the company will further strengthen collaboration with global AI companies to remain at the forefront of AI memory innovation.

The post SK hynix Showcases Unrivaled AI Memory Leadership at GTC 2025 first appeared on SK hynix Newsroom.

• Provision of 12-layer HBM4 samples, a new DRAM product with ultra-high performance for AI, to major customers comes earlier than scheduled
• Mass production of products with best-in-class bandwidth and capacity to start in 2H 2025 following certification process
• Enhancement of position as front-runner in AI ecosystem follows years of efforts to overcome technological limitations

Seoul, March 19, 2025

SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it has shipped the samples of 12-layer HBM4, a new ultra-high performance DRAM for AI, to major customers for the first time in the world.

The samples were delivered ahead of schedule based on SK hynix’s technological edge and production experience that have led the HBM market, and the company is to start the certification process for the customers. SK hynix aims to complete preparations for mass production of 12-layer HBM4 products within the second half of the year, strengthening its position in the next-generation AI memory market.

The 12-layer HBM4 provided as samples this time feature the industry’s best capacity and speed which are essential for AI memory products.

The product has implemented bandwidth¹ capable of processing more than 2TB (terabytes) of data per second for the first time. This translates to processing data equivalent to more than 400 full-HD movies (5GB each) in a second, which is more than 60 percent faster than the previous generation, HBM3E.

¹Bandwidth: In HBM products, bandwidth refers to the total data capacity that one HBM package can process per second.

SK hynix also adopted the Advanced MR-MUF process to achieve the capacity of 36GB, which is the highest among 12-layer HBM products. The process, of which competitiveness has been proved through a successful production of the previous generation, helps prevent chip warpage, while maximizing product stability by improving heat dissipation.

Following its achievement as the industry’s first provider to mass produce HBM3 in 2022, and 8- and 12-high HBM3E in 2024, SK hynix has been leading the AI memory market by developing and supplying HBM products in a timely manner.

“We have enhanced our position as a front-runner in the AI ecosystem following years of consistent efforts to overcome technological challenges in accordance with customer demands,” said Justin Kim, President & Head of AI Infra at SK hynix. “We are now ready to smoothly proceed with the performance certification and preparatory works for mass production, taking advantage of the experience we have built as the industry’s largest HBM provider.”

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”) and flash memory chips (“NAND flash”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Kanga Kong, Minseok Jang, Sooyeon Lee
E-Mail: global_newsroom@skhynix.com

The post SK hynix Ships World’s First 12-Layer HBM4 Samples to Customers first appeared on SK hynix Newsroom.

• Various memory products for AI data centers, on-device, automotive businesses on display

Seoul, March 19, 2025

SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it will participate in the GTC 2025, a global AI conference taking place March 17-21 in San Jose, California, with a booth titled “Memory, Powering AI and Tomorrow”.

The company will present HBM and other memory products for AI data centers and on-device¹ and memory solutions for automotive business essential for AI era.

¹On-device: a technology that implements certain functions on the device itself, instead of going through computation by a physically separated server. As for the on-device AI, a smart device’s direct collection and computation of information allows fast reactions of the AI performance, while promising an improved customized AI service

Among the industry-leading AI memory technology to be displayed at the show are 12-high HBM3E and SOCAMM², a new memory standard for AI servers.

²SOCAMM(Small Outline Compression Attached Memory Module): a low-power DRAM-based memory module for AI server

At the event, top company executives led by Chief Executive Officer Kwak Noh-Jung, President, Head of AI Infra and Chief Marketing Officer Juseon (Justin) Kim and Head of Global S&M Lee Sangrak will meet with the leaders of the global AI industry to enhance collaboration.

Following the industry’s first mass production and supply of the 12-high HBM3E, SK hynix is now planning to complete the preparatory works for large-scale production of the 12-high HBM4 within the second half for immediate start of supply to order. At GTC 2025, a model of the 12-high HBM4, which is under development, will also be displayed.

“We are proud to present our line-up of industry-leading products at GTC 2025,” President & Head of AI Infra Juseon (Justin) Kim said. “With a differentiated competitiveness in the AI memory space, we are on track to bring our future as the Full Stack AI Memory Provider³ forward.”

³Full Stack AI Memory Provider: SK hynix’s vision to be a provider of a full-range of AI memory products and technologies

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”) and flash memory chips (“NAND flash”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Kanga Kong, Minseok Jang, Sooyeon Lee
E-Mail: global_newsroom@skhynix.com

The post SK hynix Showcases Industry-Leading Memory Technology at GTC 2025 first appeared on SK hynix Newsroom.

• SK hynix and TSMC sign MOU to collaborate on HBM4 development and next-generation packaging technology
• SK hynix will adopt TSMC’s cutting-edge foundry process to advance HBM4 performance
• Product Design-Foundry-Memory trilateral collaboration to break memory performance limits for AI applications

Seoul, April 19, 2024

SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it has recently signed a memorandum of understanding with TSMC for collaboration to produce next-generation HBM and enhance logic and HBM integration through advanced packaging technology. The company plans to proceed with the development of HBM4, or the sixth generation of the HBM family, slated to be mass produced from 2026, through this initiative.

SK hynix said the collaboration between the global leader in the AI memory space and TSMC, a top global logic foundry, will lead to more innovations in HBM technology. The collaboration is also expected to enable breakthroughs in memory performance through trilateral collaboration between product design, foundry, and memory provider.

The two companies will first focus on improving the performance of the base die that is mounted at the very bottom of the HBM package. HBM is made by stacking a core DRAM die on top of a base die that features TSV¹ technology, and vertically connecting a fixed number of layers in the DRAM stack to the core die with TSV into an HBM package. The base die located at the bottom is connected to the GPU, which controls the HBM.

¹TSV (Through Silicon Via): An interconnect technology that links upper and lower chips with an electrode that vertically passes through the base logic chip and DRAM chips. There can be thousands of pass-through TSVs depending on the chip design

SK hynix has used a proprietary technology to make base dies up to HBM3E, but plans to adopt TSMC’s advanced logic process for HBM4’s base die so additional functionality can be packed into limited space. That also helps SK hynix produce customized HBM that meets a wide range of customer demand for performance and power efficiency.

SK hynix and TSMC also agreed to collaborate to optimize the integration of SK hynix’s HBM and TSMC’s CoWoS^®2 technology, while cooperating in responding to common customers’ requests related to HBM.

²CoWoS (Chip on Wafer on Substrate): A TSMC proprietary packaging process that connects GPU/xPU, a logic chip, and HBM, on a special substrate called an interposer. It is also called 2.5D packaging as the logic chip and the vertically stacked(3D) HBM are integrated into one module which is placed on a horizontal (2D) package substrate

“We expect a strong partnership with TSMC to help accelerate our efforts for open collaboration with our customers and develop the industry’s best-performing HBM4,” said Justin Kim, President and the Head of AI Infra, at SK hynix. “With this cooperation in place, we will strengthen our market leadership as the total AI memory provider further by beefing up competitiveness in the space of the custom memory platform.”

“TSMC and SK hynix have already established a strong partnership over the years. We’ve worked together in integrating the most advanced logic and state-of-the art HBM in providing the world’s leading AI solutions,” said Dr. Kevin Zhang, Senior Vice President of TSMC’s Business Development and Overseas Operations Office, and Deputy Co-Chief Operating Officer. “Looking ahead to the next-generation HBM4, we’re confident that we will continue to work closely in delivering the best-integrated solutions to unlock new AI innovations for our common customers.”

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), flash memory chips (“NAND flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Sooyeon Lee
E-Mail: global_newsroom@skhynix.com

Technical Leader
Kanga Kong
E-Mail: global_newsroom@skhynix.com

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