What fuels progress in the rapidly changing semiconductor world? While invention is the driver behind many advancements, reimagining the use of existing technologies for new applications can also overcome barriers to progress. This latter approach enabled SK hynix to make huge strides in the mobile DRAM field.

While the semiconductor industry struggled to continue mobile DRAM scaling¹, SK hynix made a significant breakthrough with the world’s first application of High-K Metal Gate (HKMG) to mobile DRAM. Through this innovative use of the long-established HKMG process, the company was able to develop next-generation LPDDR² products which set new standards in performance.

¹Scaling: The reduction in size of semiconductors to produce better device performance, power efficiency, and cost.
²Low Power Double Data Rate (LPDDR): Low-power DRAM products for mobile devices, including smartphones and tablets, aimed at minimizing power consumption and featuring low voltage operation.

This Rulebreakers’ Revolutions episode focuses on SK hynix’s groundbreaking application of HKMG and the challenges the company overcame to integrate this process to mobile DRAM.

The Mission: Tackle Power Loss Issues to Continue Mobile DRAM Scaling

The growth of on-device AI and other applications is placing ever-increasing performance demands on mobile devices. In turn, mobile DRAM must continue scaling down and provide faster processing speeds to support these applications while maintaining low-power consumption. However, there are issues with the continued miniaturization of mobile DRAM transistors through traditional processes.

A DRAM typically includes cell transistors which store data and peripheral (peri.) transistors responsible for data input and output. To improve DRAM performance, it is necessary to scale down transistors which brings the source³ and drain⁴ closer together and increases the current. However, to reduce power consumption, the operating voltage to the gate⁵ must be decreased. Consequently, the gate insulating film must be thinned to improve transistor performance at a lower voltage.

In standard DRAM products including mobile DRAMs, this insulating film is generally made from silicon oxynitride (SiON) which encounters reliability issues when reduced in thickness. Moreover, the thinning of SiON insulators increases the amount of leakage current⁶, leading to a loss of power. This is a significant issue for battery-powered mobile devices in which low-power consumption is critical to extend the usage time on a single charge.

³Source: The terminal through which the majority charge carriers enter the transistor.
⁴Drain: The terminal through which the majority charge carriers exit from the transistor.
⁵Gate: A component in a transistor that controls the flow of electric current by acting as an on-off switch.
⁶Leakage current: Unwanted flow of electrical current that occurs when the transistor is in the off state.

SiON insulators in conventional transistors are a barrier to DRAM scaling

To tackle this power consumption issue and ultimately ensure the continued scaling of mobile DRAM without compromising performance, SK hynix once again broke the rules of convention and turned to a long-standing technology—HKMG.

The Future Lies in The Past: World-First HKMG Application & Integration Challenges

HKMG was commercialized over a decade ago, first used in logic semiconductors and then applied to high-performance DRAM memory. Although HKMG was an established technology, SK hynix was the first company to see it as a solution to the scaling limitations of mobile DRAM while others continued with traditional processes. This pioneering application of HKMG and optimization of the process revolutionized the mobile DRAM sector, paving the way for ultra-low-power and ultra-high-speed solutions.

The groundbreaking application of HKMG enabled mobile DRAM to continue scaling

So what is HKMG and how does it solve the issues of the traditional SiON process? The HKMG process involves replacing the traditional SiON insulator in transistors with a thin High-K film which prevents leakage currents and improves reliability. Offering high levels of permittivity⁷, High-K film provides equivalent electrical characteristics as a film five times thicker. This thinner film enables continuous transistor scaling, resulting in faster speeds and lower power characteristics compared to SiON-based transistors.

⁷Permittivity: Degree of how many electrons can be stored inside a gate.

The HKMG process tackled the power and performance issues associated with SiON insulators in conventional transistors

As the whole HKMG process had never been applied to mobile DRAM before, SK hynix had to optimize the process and overcome challenges to ensure its smooth application. One of the most significant risks the company recognized was the potential for defects to arise from the application of HKMG to mobile DRAM. In particular, when applying the HKMG process to an LPDDR product for the first time, various stability issues arising from the use of new materials could cause chip defects. To combat this, SK hynix conducted preliminary evaluations through pilot products. Through these various evaluations and tests along with leveraging cross-company expertise, SK hynix was able to maximize transistor performance and ultimately secure the integrated process solution for mobile DRAM.

Unlocking New LPDDR Solutions

The first-ever mobile DRAM products made with the HKMG process offered huge leaps in power and speed

The successful integration of the HKMG process with mobile DRAM paved the way for SK hynix to develop new ultra-low-power and rapid LPDDR solutions. In November 2022, the company released the world’s first ever mobile DRAM with the integrated HKMG process, Low Power Double Data Rate 5X (LPDDR5X). The product offered ultra-low operating power of 1.01–1.12V and an operating speed of 8.5 Gbps. LPDDR5X is 33% faster and uses 21% less power compared to the previous generation, ensuring it meets both sustainability goals to lower carbon emissions and technological targets.

Just two months later, SK hynix once again set new standards in mobile DRAM with the introduction of Low Power Double Data Rate Turbo (LPDDR5T). While LPDDR5T operates at the same low voltage as LPDDR5X and provides a 21% reduction in power consumption from LPDDR5, it also offers significant leaps in speed from its predecessor. At the time of its release, LPDDR5T was the world’s fastest mobile DRAM, boasting an impressive operating speed of 9.6 Gbps—13% faster than LPDDR5X and 50% quicker than LPDDR5. Such speeds were only thought of as possible with the next-generation LPDDR6, but the company was able to reach new heights ahead of schedule thanks largely to the application of HKMG.

Rulebreaker Interview: Jongchan Choi, Product Solution Process Integration

To learn more about the “rulebreaking” approach which led to the application of HKMG to mobile DRAM, the SK hynix newsroom interviewed Team Leader Jongchan Choi of Product Solution Process Integration. Choi, who helped develop the process solution when HKMG was first applied to LPDDR products, discusses the future direction of HKMG and its potential future applications beyond mobile DRAM.

<Other articles from this series>

[Rulebreakers’ Revolutions] How MR-MUF’s Heat Control Breakthrough Elevated HBM to New Heights

[Rulebreakers’ Revolutions] Innovative Design Scheme Helps HBM3E Reach New Heights

The post [Rulebreakers’ Revolutions] How SK hynix Broke Barriers in Mobile DRAM Scaling With World-First HKMG Application first appeared on SK hynix Newsroom.

As part of efforts to strengthen its competitiveness in the future AI infrastructure market, SK hynix created the AI Infra division and the affiliated HBM¹ Business department at the end of 2023. In a key appointment within HBM Business, Vice President Unoh Kwon became head of HBM Process Integration (PI).

While working as a DRAM development research fellow in 2022, Kwon broke new ground by becoming the first to apply the HKMG² process to the mobile DRAM LPDDR, and this led to the successful development of the ultra-high-speed and low-power LPDDR5X and LPDDR5T. In recognition of his contributions, Kwon was awarded the SUPEX Award³ in 2023.

¹High Bandwidth Memory (HBM): A high-value, high-performance product that revolutionizes data processing speeds by connecting multiple DRAM chips with through-silicon via (TSV). There are five generations of HBM, starting with the original HBM and followed by HBM2, HBM2E, HBM3, and the latest HBM3E—an extended version of HBM3. SK hynix is the first in the world to begin mass production of HBM3E.
²High-K metal gate (HKMG): A next-generation process that uses a material with a high dielectric constant (K) as an insulating film inside the DRAM transistor to prevent leakage current and improve capacitance. It enables faster speeds while reducing power consumption.
³SUPEX Award: As the most prestigious award within SK Group that carries the meaning “super excellent,” it recognizes members who have successfully realized innovations by not being afraid to take on new challenges.

With his strong technical background, Kwon has been tasked with finishing the future roadmap for the company’s HBM technology. As part of the newsroom’s series focusing on new executive members at SK hynix, Kwon spoke about his vision to develop the next generation of HBM technology and his strategies for the AI era.

Improving Development Efficiency Through HBM-Focused, Integrated HBM Business Department

Kwon anticipates the HBM Business department will bring greater efficiency while enhancing employees’ technical capabilities

With the continuous evolution of AI, demand has also rapidly increased for HBM—a representative memory product for the technology. “I feel a great sense of pride and responsibility to take on this role when there are high expectations for SK hynix’s HBM products,” said Kwon. “With the combined experience and challenging spirit of employees who developed the world’s best-performing HBM, we will do our best to achieve the next generation of technological innovations.”

In a move to improve the efficiency and synergy of HBM production from the development phase to the manufacturing and commercialization stages, SK hynix merged the various departments in charge of these processes into HBM Business. This rare, product-focused reorganization demonstrates the company’s commitment to maintaining its HBM leadership.

Kwon cites the HBM Business department’s high efficiency as its biggest strength. By shortening the decision-making process at the beginning of product development, members can quickly coordinate among themselves and execute projects. Furthermore, as the development team can hear feedback directly from customers, the team can reflect customer values during product development.

“Possessing the united goal of advancing HBM, our department has created an environment where we can focus on our technical capabilities and demonstrate them to the fullest,” Kwon stated. “Consequently, our members have been able to take a more goal-orientated view. What’s more, I can now also analyze what is needed for our technology to grow from a business perspective, and I plan to use this skill to contribute significantly to our efforts.”

Harnessing Unique Semiconductor Fundamental Technology to Revolutionize HBM

Kwon plans to use his previous experience in system semiconductors to advance HBM technology

When asked about the biggest achievement of his career, Kwon chose the application of the HKMG process to LPDDR in 2022. The HKMG process ranks as one of the most significant innovations in semiconductor fundamental technology⁴. Although it was applied early on in system semiconductors, HKMG was not easy to implement in mobile DRAM semiconductor memories where the leakage current needs to be controlled to minimize power consumption.

⁴Fundamental technology: A key technology used for implementing changes and improvements to product characteristics.

Using his past experience at a different global tech company where he successfully applied the HKMG process in system semiconductors, Kwon was once again able to break the technical barriers in mobile DRAM. “It meant a lot to be a part of collective efforts with SK hynix members to make the technological breakthrough of changing the paradigm of memory circuit structures,” Kwon exclaimed.

“As a product featuring advanced and complex technology, HBM can be said to be the most technologically intensive DRAM around,” he explained. “HBM is also the main reason I decided to take on the challenge of shifting my focus from system semiconductors to semiconductor memories.” Fascinated by HBM’s ability to spark the convergence of systems and memory, Kwon now plans to concentrate all his technical skills for another breakthrough.

“I expected that there would come a time when performance improvements would go beyond established scaling and reach technological advancements deriving from the convergence of structures, devices, and processes between system semiconductors and semiconductor memories,” Kwon said. “As I predicted that there would be new opportunities for innovation driven by semiconductor memories, I was convinced that HBM was the beginning of this technological revolution. That is why I am more committed than ever to leverage my experiences to create bigger synergies for SK hynix’s HBM technology.”

Confidently Taking on Unforeseen Challenges During the AI era

Kwon believes that adaptability and a challenging spirit will bring innovations in the AI era

Commenting on the outlook of the HBM market, Kwon said that “HBM will become specialized and customized to reflect the values sought by customers.” He stressed that in addition to excellent functional capabilities, the next generation of HBM will need to work as a specialty product differentiated for each customer and have a role that goes beyond memory.

“As we enter the AI era, we are witnessing an unprecedented level of rapid change,” Kwon said. “It is now more important than ever to stay ahead of the curve and react flexibly to changes. To maintain our technological leadership and to lead in the AI era, HBM PI is working hard to develop technologies which will lead to the innovation of fundamental technologies and rapid commercialization of products. We are also actively engaging and collaborating with customers and external partners.”

Kwon also emphasized the importance of not only adapting to changes but also of broadening one’s horizons and taking on challenges to achieve innovations.

“In the future, AI memory will go beyond its current focus on data centers to expand into areas that meet certain purposes. These include ASICs⁵ with improved performance and efficiency or on-device solutions that are optimized for customers’ products,” Kwon claimed. “HBM will not be the only AI memory in use as various types of DRAMs will also become essential memory for AI. Additionally, semiconductor devices will have to be developed to meet various required conditions including traditional characteristics. In a period of such drastic change, it is important to broaden our horizons to create essential synergies by fusing various technologies together, proactively challenge ourselves, and use our setbacks to get up and test ourselves again.”  

⁵Application-specific integrated circuit (ASIC): Also known as a custom semiconductor, an ASIC is an integrated circuit designed for a specific purpose.

In closing, Kwon encouraged SK hynix employees to take pride in leading important changes in the AI era.

“There have been many technological breakthroughs in history, but the changes brought on by AI are bigger and greater than ever,” he said. “SK hynix is driving these significant shifts with its industry-leading technological competitiveness. All of our members have an important role in the AI era, and I will continue to strengthen HBM’s capabilities with a great sense of pride and responsibility.”

<Other articles from this series>

New Leadership Spotlight: SK hynix’s First Female Research Fellow, Vice President Oh Haesoon, on Advancing NAND Flash

New Leadership Spotlight: SK hynix’s Youngest Exec, Lee Donghun, Discusses Spearheading NAND Flash Development

New Leadership Spotlight: Vice President Kitae Kim, Head of HBM Sales & Marketing, on Future-Proofing HBM’s Market Leadership

New Leadership Spotlight: Vice President Hoyoung Son Targets SK hynix’s Evolution Into Total AI Memory Provider Through Advanced Packaging Tech

Leadership Spotlight: Deoksin Kil, Head of Material Development, On Achieving Tech Innovation Through Advanced Materials

New Leadership Spotlight: Global RTC Head Jaeyun Yi Aims to Present a New Paradigm for the Future of Semiconductors

New Leadership Spotlight: SK hynix Execs Join Roundtable to Discuss Company’s AI Memory Leadership & Future Market Trends

The post New Leadership Spotlight: Head of HBM PI Unoh Kwon Aims to Finish SK hynix’s HBM Roadmap & Lead in the AI Era first appeared on SK hynix Newsroom.

• 9.6Gbps product verified to be compatible with Qualcomm’s new Snapdragon mobile processor
• With validation with global major partners completed, SK hynix to provide LPDDR5T to global smartphone customers
• “SK hynix, Qualcomm to collaborate further to accelerate smartphones’ growth into key devices in AI era”

Seoul, October 25, 2023

SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it has started commercialization of the LPDDR5T(Low Power Double Data Rate 5 Turbo)¹, the world’s fastest DRAM for mobile with 9.6Gbps speed.

The company said that it has obtained the validation that the LPDDR5T is compatible with Qualcomm Technologies’ new Snapdragon® 8 Gen 3 Mobile Platform, marking the industry’s first case for such product to be verified by the U.S. company.

¹LPDDR: Low power DRAM for mobile devices, including smartphones and tablets, aimed at minimizing power consumption and that features low voltage operation. The latest specifications are for the 7th generation, succeeding the series that end with 1, 2, 3, 4, 4X, 5 and 5X. LPDDR5T is a newly developed version by SK hynix, and an upgraded product of the 7th generation (5X), prior to the development of the 8th generation LPDDR6.

SK hynix has proceeded with the compatibility validation of the LPDDR5T, following the completion of the development in January, with support from Qualcomm Technologies. The completion of the process means that it is compatible with Snapdragon 8 Gen 3.

With the validation process with Qualcomm Technologies, a leader in wireless telecommunication products and services, and other major mobile AP(Application Processor) providers successfully completed, SK hynix expects the range of the LPDDR5T adoption to grow rapidly.

The company plans to provide 16GB-capacity product, a combination of multiple single LPDDR5T chips, of which data processing speed is 77GB per second, equivalent to processing 15 Full-HD movies within a second.

The LPDDR5T product also holds an edge in power consumption, performing at the lowest voltage of the 1.01~1.12V standards stipulated by the Joint Electron Device Engineering Council, or JEDEC.

SK hynix applied the HKMG (High-K Metal Gate)² process to bring a remarkable improvement in both speed and power efficiency. With the adoption of this technology, the company expects the LPDDR5T to gain a large share of the market before the next-generation LPDDR6 is introduced.

²HKMG (High-K Metal Gate): A next-generation process that uses a material with a high dielectric constant (K) in the insulating film inside DRAM transistors to prevent leakage currents and to improve capacitance. It reduces power consumption, while increasing speed. SK hynix was the industry’s first to integrate the process in mobile DRAM in November.

“Generative AI applications running on our new Snapdragon 8 Gen 3 enables exciting new use cases by executing LLMs and LVMs on device with minimal latency and at the lowest power,” said Ziad Asghar, Senior Vice President of Product Management at Qualcomm Technologies, Inc. “Our collaboration with SK hynix pairs the fastest mobile memory with our latest Snapdragon mobile platform and delivers amazing on-device, ultra-personalized AI experiences such as AI virtual assistants for smartphone users.”

“We are thrilled that we have met our customers’ needs for the ultra-high performance mobile DRAM with the provision of the LPDDR5T,” said Sungsoo Ryu, head of DRAM Product Planning at SK hynix.

Ryu said that smartphones are expected to grow their presence as the key devices where the AI technologies are fully applied onto in coming years. “I believe the smartphone functions, backed by excellent DRAM for mobile, should continue to improve. We will continue to work toward strengthening our collaboration with Qualcomm Technologies to advance the technology in this space.”

Snapdragon is a trademark or registered trademark of Qualcomm Incorporated.
Snapdragon is a product of Qualcomm Technologies, Inc. and/or its subsidiaries.

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), flash memory chips (“NAND flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Kanga Kong
E-Mail: global_newsroom@skhynix.com

Technical Leader
Joori Roh
E-Mail: global_newsroom@skhynix.com

The post SK hynix’s LPDDR5T, World’s Fastest Mobile DRAM, Completes Compatibility Validation with Qualcomm first appeared on SK hynix Newsroom.

• First to offer industry’s largest 24GB capacity; Begins supplying product to a global smartphone manufacturer
• Integrates HKMG process, enabling the product to deliver both ultra-low power consumption and high performance
• “Aims to lead premium DRAM market with a priority on meeting customers’ needs”

Seoul, August 11, 2023

SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it has begun supplying the industry’s first 24-gigabyte (GB) Low Power Double Data Rate 5X (LPDDR5X¹) mobile DRAM package to its customers, following the mass production of LPDDR5X in November 2022.

¹ LPDDR: Low Power DRAM for mobile devices, including smartphones and tablets, aimed at minimizing power consumption and features low voltage operation. LPDDR5X DRAM is the 7th generation product, succeeding the series of such that ends with 1, 2, 3, 4, 4X and 5. SK hynix, in January, developed LPDDR5T, which is an upgraded product of LPDDR5X prior to the development of the 8th generation LPDDR6, and is currently processing customer validation.

“The company integrated the High-K Metal Gate (HKMG²) process in the 24 GB LPDDR5X package, enabling the product to deliver outstanding power efficiency and performance,” said SK hynix. “The addition of the 24GB package to our mobile DRAM product portfolio has given us a more flexibility in accommodating customers’ needs.”

² HKMG: A next-generation process that uses a material with a high dielectric constant (K) in the insulating film inside DRAM transistors to prevent leakage currents and to improve capacitance. It reduces power consumption while increasing speed. SK hynix had become the industry’s first to integrate the process in mobile DRAM in Nov. 2022.

The 24GB LPDDR5X package operates in the ultra-low voltage range of 1.01 to 1.12V set by the Joint Electron Device Engineering Council (JEDEC), and can process 68GB of data per second, which is equivalent to transferring 13 FHD (Full-HD) movies in one second.

SK hynix, prior to today’s announcement, has begun supplying its new product to smartphone manufacturer OPPO since last month. OPPO’s latest flagship smartphone ‘Oneplus Ace 2 Pro’, which features SK hynix’s 24GB LPDDR5X package, was launched on August 10^th.

“With the timely supply of 24GB LPDDR5X from SK hynix, we were able to become the first to launch a smartphone that features the industry’s largest capacity DRAM,” said Louis Li, Vice President of Marketing at OPPO. “This new smartphone will allow the customers to enjoy optimized multi-tasking environment as well as extended battery life.”

Due to rapid performance improvement, the roles of modern smartphone have expanded beyond the communication device and into edge device³, and IT experts forecast the gadget to be essential in the AI era. In order to incorporate AI into smartphones, it is crucial to enhance the performance of semiconductor memory, which is the core component, and accordingly, the memory industry is projected to grow further.

³ Edge Device: A device that operates at the edge of a network – an edge-to-cloud continuum – that collects and transmits data to connect the local network to an external wide area network (i.e. cloud, data center), such as personal smart devices, vehicles and Internet of Things (IoT) devices.

“Along with a faster advancement in broader IT industry, our LPDDR products will be able to support a growing list of applications such as PC, server, high-performance computing (HPC) and automotive vehicles,” said Myoungsoo Park, Vice President and Head of DRAM Marketing at SK hynix. “The company will cement our leadership in the premium memory market by providing the highest performance products that meet customers’ needs.”

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), flash memory chips (“NAND flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Joori Roh
E-Mail: global_newsroom@skhynix.com

Technical Leader
Kanga Kong
E-Mail: global_newsroom@skhynix.com

The post SK hynix Starts Mass Production of Industry’s First 24GB LPDDR5X DRAM first appeared on SK hynix Newsroom.

• Offers fastest operating speed in DDR5 history, ultra-low power consumption with adoption of HKMG process
• Expects to successfully complete validation of industry-leading 1bnm DDR5
• Mass production of industry’s most advanced 1bnm DDR5 to help improve 2H23 earnings
• 1bnm technology to be applied to high-end products including LPDDR5T, HBM3E in 1H24

Seoul, May 30, 2023

SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it has completed the development of the industry’s most advanced 1bnm, the fifth-generation of the 10nm process technology, while the company and Intel began a joint evaluation of 1bnm and validation in the Intel Data Center Certified memory program for DDR5 products targeted at Intel ® Xeon® Scalable platforms.

The move comes after SK hynix became the first in the industry to reach 1anm readiness and completed Intel’s system validation of the 1anm DDR5, the fourth-generation of the 10nm technology.

The DDR5 products provided to Intel run at the world’s fastest speed of 6.4Gbps (Gigabits per second), representing a 33% improvement in data processing speed compared with test-run products in early days of DDR5 development¹.

¹ DDR5 products for test run in early days of development ran at 4.8Gbps, while the maximum speed of DDR5 stipulated in the JEDEC standards is 8.8Gbps

Besides, with the adoption of high-K metal gate² process, the 1bnm DDR5 products reduce power consumption by over 20% than 1anm DDR5 products.

² HKMG process: A next-generation process that uses a high dielectric constant (K) material in the insulating film of the DRAM transistor to prevent leakage current and improve capacitance. It reduces power consumption, while increasing speed. SK hynix introduced the world’s first HKMG process for mobile DRAM in November and adopted the technology for its 9.6Gbps LPDDR5T mobile DRAM in January 2023

SK hynix emphasized that the development of the latest 1bnm technology will enable the company to provide its global customers with DRAM products that offer both high-performance and performance per watt³.

³ Performance per watt: an indicator of how much computation is performed per watt of power consumed

“SK hynix expects the validation process of the 1bnm DDR5 product with Intel to go smoothly following a successful validation of our 1anm server DDR5 product compatibility with the 4th Gen Intel® Xeon® Scalable processors,” Jonghwan Kim, Head of DRAM Development at SK hynix, said.

“Amid growing expectations that the memory market will start to recover from the second half, we believe our industry-leading DRAM technology, proven again through mass production of the 1bnm process this time, will help us improve earnings from the second half,” Kim said, adding that the 1bnm process will be adopted for a wider range of products such as LPDDR5T and HBM3E⁴ in the first half of 2024.

⁴ HBM3E (HBM3 Extended): HBM3E is the 5^th generation High Bandwidth Memory product, succeeding the previous generations HBM, HBM2, HBM2E and HBM3. SK hynix plans to prepare samples of HBM3E product that runs at 8Gbps data processing speed by the second half and begin mass production in 2024

Intel Vice President of Memory and IO Technologies, Dr. Dimitrios Ziakas said, “Intel has been collaborating with the memory industry to ensure compatibility of DDR5 memory on Intel® Xeon® Scalable platform. SK hynix 1bnm is the first of its generation being targeted for the next Intel® Xeon® Scalable platform” and the Intel Data Center Certified memory program.

Meanwhile, SK hynix also said that additional validation processes to apply its 1anm DDR5, of which the first compatibility test has been already completed, onto the next generation of Intel® Xeon® Scalable platform are also underway.

<History of SK hynix’s developments & accomplishments of DDR5 products>

• Industry’s first launch of DDR5 in October 2020
• Industry’s first shipment of 24Gb DDR5 samples in December 2021
• Industry’s first to get Intel’s validation for server 1anm DDR5 in January 2023
• Industry’s first provision of samples of server 1bnm DDR5 to Intel in April 2023

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), flash memory chips (“NAND flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Intel, the Intel logo, and other Intel marks are trademarks of Intel Corporation or its subsidiaries.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Kanga Kong
E-Mail: global_newsroom@skhynix.com

Technical Leader
Joori Roh
E-Mail: global_newsroom@skhynix.com

The post SK hynix Enters Industry’s First Compatibility Validation Process for 1bnm DDR5 Server DRAM first appeared on SK hynix Newsroom.

From breaking barriers for performance with HBM3 to developing the world’s fastest mobile DRAM, LPDDR5T, SK hynix’s product portfolio is full of industry-leading solutions which have pushed technological limits. But how exactly does the company realize this rapid evolution in its solutions? What innovations and processes are applied to these products to take them to the next level?

To shed light on these technologies, SK hynix Newsroom is launching its seven-part Tech Pathfinder series. The articles in the series will introduce some of the company’s most advanced products globally renowned for their unprecedented qualities including industry-leading processing speed, data storage, and computational capabilities. Through the series, readers will gain a better grasp of the concepts behind these innovative products and gradually become more familiar with the advancement of semiconductors and technology in general.

SK hynix’s Secret Behind Its DRAM Development

In November 2022, SK hynix released a mobile DRAM with the world’s lowest operating power of 1.01-1.12V and an operating speed of 8.5 Gbps—Low Power Double Data Rate 5X (LPDDR5X). The company then made another historic step in January 2023 with the development of its Low Power Double Data Rate 5 Turbo (LPDDR5T), the world’s fastest mobile DRAM which offers an operating speed of 9.6 Gbps.

▲ Figure 1. SK hynix’s LPDDR5 Lineup Made With the HKMG Process

Smartphone mobile DRAMs need to be small, low-power devices which provide fast processing speeds to perform more functions. However, as the industry reaches the limits of scaling¹, such mobile DRAM technology only becomes more complex. So, what is the secret in SK hynix’s technology that has allowed the company to remain a powerhouse in mobile DRAM development? The answer lies in the world’s first application of the High-K Metal Gate (HKMG) process to mobile DRAM. This article will summarize the principle of the HKMG process and how this technology was applied to the LPDDR5X and LPDDR5T.

¹Scaling: The reduction in size of semiconductors to produce better device performance, power efficiency, and cost.

HKMG Process: Key to the World’s Fastest Mobile DRAM With Lowest-Power Consumption

▲ Figure 2. SK hynix Applies HKMG Process to Develop the World’s Fastest Mobile DRAM

Although HKMG was commercialized over a decade ago, various challenges were encountered during the development of this groundbreaking technology. There were four major obstacles: the extreme complexity of the technology, the high-processing cost compared to conventional materials, unpredictable risks, and the difficulty in controlling electron leakage. More importantly, the whole HKMG process had never been applied to mobile DRAM before. Despite facing these issues, SK hynix took on the challenge of changing the paradigm of mobile DRAMs.

More specifically, applying the HKMG process to mobile DRAM peripheral (peri) transistors posed a major challenge. DRAMs typically consist of cell transistors which store data and peri transistors which conduct data input and output. It is therefore necessary to minimize the impact of the HKMG process on the cell as the connection between the cell and peri transistor can encounter problems when applying the HKMG process to the periphery.

Accordingly, the area of the peripheral circuit that powers the cell is also reduced as the cell scale is minimized. This leads to a shrinking of the transistors that supply the charge, which, consequently, reduces the thickness of the gate insulator. These insulators for conventional mobile DRAMs are generally made from silicon oxide (SiON), which suffers from speed limitations when it is thinned. SiON also faces an efficiency problem as, when the thickness of the insulator decreases, the amount of leakage current increases and this leads to a loss in power.

SK hynix’s solution to these issues was to apply High-K material to the insulation film as the material has a permittivity² that is about five times higher than conventional SiON insulation film. To put this into context, when the same voltage is applied, the High-K insulation film can keep five times more charge than a conventional SiON material with the same area and thickness. This means that the thickness and leakage current can be reduced by making the insulation film with High-K material.

²Permittivity: Degree of how many electrons can be stored inside a gate.

However, the combined use of polysilicon (poly-Si)—applied in existing gates—and High-K materials increased the gate’s resistance, so a higher voltage is required and electrons slow down. To combat this, the poly-Si gate was replaced with a metal gate. With the combination of a gate oxide that possesses a high permittivity and a metal electrode, SK hynix successfully created an integrated HKMG solution.

▲ Figure 3. Description of HKMG Technology

Pioneering the Application of the HKMG Process

In preparation for the development stage, SK hynix first set up a taskforce comprised of device and process experts in the development, research, and manufacturing fields. The taskforce, the first of its kind for a derivative product³, consisted of members of the and PE (Product Engineering) team. Having begun working together from the initial stages of the process development, the taskforce resolved issues such as reliability and quality risks. Their main goal was to develop an integrated solution incorporating HKMG technology to the existing process while minimizing costs by maintaining parts of the existing process as much as possible.

³Derivative product: A product that is derived from a core product. Core products, a kind of prototype in which existing technology and elements are applied, allow manufacturers to establish a leadership position in the related technology as they can be quickly developed. The resultant derivative products feature various capacity and performance modifications to meet market needs.

It was also necessary to develop a method for utilizing the characteristics of the HKMG process to both increase speed and reduce power usage. However, due to the limitations in the chip’s size, lowering the electrical capacity to reduce power was not possible. Consequently, it became necessary to create a design that would lower the voltage. To this end, innovative design ideas were produced which eventually led to low-power solutions. These solutions included using a power architecture that would lower the design’s internal power and lowering the gate level in sleep mode to significantly reduce power consumption.

SK hynix Rewrites the Rules With LPDDR5X and LPDDR5T

▲ Figure 4. SK hynix’s World-First Application of HKMG Process to Mobile DRAM Enables Ultra-High Speed & Ultimate Power Efficiency

While effectively controlling leakage current, LPDDR5X offers a 33% increase in speed (8.5 Gbps) and a 21% power usage reduction compared to the previous generation. This increase in energy efficiency ensured the product reached its environmental goal of carbon reduction as well as meeting target technological specifications. Skip forward two months and LPDDR5T was developed. Operating in the same ultra-low voltage range as LPDDR5X, it is 13% faster at 9.6 Gbps to make it the fastest mobile DRAM available today.

SK hynix’s mobile DRAM which applies the HKMG process has been praised for its world-class performance. The company is also promoting the establishment of a new specification for mobile DRAM at the Joint Electron Device Engineering Council (JEDEC). SK hynix’s next step is to actively leverage the experience gained from the successful development of the HKMG process to bring even greater innovation to the next generation of technologies and products. In other words, LPDDR5X and LPDDR5T are just the beginning.

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The post [Tech Pathfinder] HKMG Opens the Door to Leading Mobile DRAM LPDDR5X & LPDDR5T first appeared on SK hynix Newsroom.

▲SK hynix’s recently released ultra-low voltage LPDDR5X

SK hynix has developed LPDDR5X (Low Power Double Data Rate 5X), the world’s first-ever mobile DRAM with an integrated HKMG (High-K Metal Gate)* process, which was just recently introduced to the market.

*HKMG: A next-generation process that uses a material with a high dielectric constant (K) in the insulating film inside DRAM transistors to prevent leakage currents and to improve capacitance. It reduces power consumption while increasing speed.

The LPDDR5X boasts the industry’s highest energy-efficiency as SK hynix succeeded in reducing power consumption by 25% compared to the previous generation and operates in the ultra-low voltage range of 1.01V to 1.12V set by the JEDEC (Joint Electron Device Engineering Council).

For the LPDDR, which is also called a mobile DRAM, having a low power consumption is its greatest asset, just as its standard name—LP (Low Power)—suggests. As power is limited in mobile devices, it’s necessary to reduce power consumption as much as possible to extend the usage time.

This is why lowering power consumption is just as important as increasing operating speed. LPDDR5X was the first among mobile DRAMs to integrate the HKMG process and see improved performance and a reduction in power consumption, essentially killing two birds with one stone.

As the power consumption of DRAM gets lowered by LPDDR5X, mobile devices can be used for a longer time with a single charge. The reduction in power consumption of such products can subsequently lead to a reduction in the power used by consumers, which is in line with the value of SK hynix’s ESG-centered business management.

Additionally, the current LPDDR5X has an operating speed of 8.5Gbps, 33% faster than the previous generation.

The industry is taking heed that SK hynix introduced the world’s first-ever LPDDR with an integrated HKMG process. The newsroom team sat down with Lee Jae Hyuk (Mobile & Auto Planning), Nam KiBong (Function Device), Cho Sung Kwon (Canopus LPD5 PE), Kim Hyun Seung (Design Quality Innovation), and Lee Wook Jae (MCP/ MO Enablement)—the people behind the successful development of LPDDR5X—to hear the story behind the development process and their unflagging commitment to its launch.

▲SK hynix’s timeline towards developing the world’s first-ever and finest LPDDR, which led to increased operating speeds and lowered power consumption

LPDDR (Low Power Double Data Rate), also known as mobile DRAM, is mainly used in wireless electronic devices including smartphones, laptops, and tablets. LPDDR is smaller and requires less power compared to other DRAM products, reducing the devices’ size and weight as well as extending usage time. The increase in demand for mobile devices, including smartphones, was a critical factor in LPDDR’s rapid development. The recent spotlight on the environment also boosted interest in LPDDR, which requires less power.

▲ LPDDR5X, which is 33% faster than LPDDR5, can download thirteen 5GB movies in 1 second

SK hynix continuously developed LPDDR without missing out on these market trends. The company mass-produced the 18GB LPDDR5, currently the industry’s largest capacity, in 2021 and followed up with the industry’s fastest LPDDR5X (4266MHZ/8.5Gbps) a year later, cementing its leadership in memory semiconductors. SK hynix then went a step further, developing an LPDDR that is 33% faster than the previous generation and allows users to download more than thirteen 5GB videos in one second. The newsroom team went behind-the-scenes to discover how the teams involved developed the industry’s best performing LPDDR5X.

▲ The team members behind the successful development of LPDDR5X smile as they reminisce about making a breakthrough together

How the world’s fastest LPDDR5X was developed

The process also requires countless people’s efforts at the planning, design, production, and sales stages. Lee Jae Hyuk, responsible for product planning during the planning stage of the LPDDR5X development, recalled the planning period as follows:

▲ Lee Jae Hyuk, Technical Leader at Mobile & Auto Planning, smiles as he explains the LPDDR5X planning process

“Planning for a new product usually begins several years in advance. When planning LPDDR5X, it was not easy to meet the 8.5Gbps specification. Various internal departments had differing opinions on how to meet this specification, but we had confidence in our capabilities and successfully completed the development of the industry’s fastest LPDDR5X on time.”

Although the interviewees and their teams can laugh about it now, they had plenty of hurdles to overcome during LPDDR5X development process. Kim Hyunseung, who was responsible for product design, recalled, “There were several challenges during the technology’s development. “How can we increase the speed further?” “How can we reduce the power required further?” It was a continuous and daily series of thoughts and meetings.”

▲ Kim Hyunseung, Technical Leader at Design Quality Innovation, explains how LPDDR5X was successfully developed

Kim Hyunseung explained how the team was able to develop LPDDR5X despite the difficulties: “The development process of LPDDR5X was somewhat unrestrictive. Typically, derivative products such as LPDDRs do not significantly modify existing circuits. However, this time, we were able to freely modify the circuit and adopt new technologies during the design process. I think this unrestrictive atmosphere and the spirit of challenge to introduce new technologies played a big part in the development’s success.”

Looking back at the LPDDR5X development process, a faster operating speed was not the teams’ only concern. Currently, LPDDR is mainly used in the smartphone market, where new products are released at regular intervals, or in other words has a short time-to-market. This meant that the successful development of LPDDR5X had to align with the market’s timetable.

Cho Sung Kwon, in charge of PE (Product Engineering), admitted that he and his team felt enormous pressure. Providing products to the market in time for the development of new smartphone releases is crucial in securing competitiveness, adding to his team’s sense of responsibility. “We are pleased to have developed the LPDDR5X within a limited time frame. Especially in terms of mass production capabilities, I feel prouder of this than any other product I have worked on so far.”

▲ Cho Sung Kwon, Project Leader at Canopus LPD5 PE (second from the right) explains the pressure he felt during the development process

During the testing process, there were moments when the team faced unexpected difficulties and concerns. “Various issues arose during the process of developing LPDDR5X. For each issue, relevant departments collaborated to identify and analyze them and developed alternatives. I credit the successful development to my colleagues’ active responses,” said Nam KiBong, who oversaw PI (Process Integration), which designed numerous process flows in semiconductor production.

A more environmentally friendly LPDDR5X in line with ESG values

SK hynix’s success in developing LPDDR5X does not end with simply developing a faster DRAM. The product operates in the ultra-low voltage range of 1.01 to 1.12V set by JEDEC*, thus reducing power consumption by 25% compared to existing products.

*JEDEC: Joint Electron Device Engineering Council, an organization that sets semiconductor standards.

LPDDR5X’s development process also incorporated ESG management efforts. Lee Jae Hyuk said, “Our work involves not only increasing the usage time of mobile devices, but also reducing power consumption more dramatically by taking the ESG aspect into account as well. Thanks to this, we expect to reduce power consumption by more than 25% compared to the previous generation.”

▲ Lee Wook Jae, Project Leader at MCP/ MO Enablement, explains LPDDR5X’s power consumption reduction

Lee Wook Jae added, “The usage time of a smartphone with LPDDR5X will be longer than that of older-generation smartphones. This is great for consumers, as they can use their phones for longer periods of time on a single charge. It reduces the frequency of charging, which ultimately uses less electricity and leads to carbon savings.”

During the interview, it was suggested that SK hynix must be more active in strengthening ESG management by implementing ESG values. Lee Jae Hyuk said, “For product development, I think that ESG values can be achieved in the actual development stage only when ESG factors are properly implemented in the planning stage.”

Cho Sung Kwon added, “We reduced the testing time further as we tested the products during the development process, and at the design stage, we designed our products to operate with the lowest possible power consumption. We are working together to incorporate ESG values as a whole in all stages of planning, design, and development.”

Building a better SK hynix with a sense of challenge

The development of LPDDR5X, which boasts improved speeds at lower power consumption, would have been impossible without the efforts of SK hynix employees. “We achieved a power consumption reduction of more than 20% for LPDDR5X, and we are proud that we are receiving a lot of positive feedback from our customers,” Lee Wook Jae, who conducts marketing, said as he reported that customers such as SoC companies are complimenting on the product.

▲ Nam KiBong, Technical Leader at Function Device, (center) talks about SK hynix’s positive future

The SK hynix employees are even more optimistic about new semiconductors that will be developed moving forward, and are confident that they can develop faster and more powerful semiconductors. “This is what I know having worked at SK hynix so far. At the beginning of the development process, I kept asking myself, “Why is this so challenging?” However, at the end of the day, once we passed through a few hurdles, things were a lot smoother, and we overcame other challenges. After the LPDDR5X’s successful development we expect to progress into developing higher performance semiconductors,” said Nam KiBong, hinting at his great expectations for the new semiconductors to be developed in the future.

Meanwhile, Kim Hyunseung specifically called for other SK hynix employees to cultivate this sense of challenge. “I have a story I want to tell my colleagues coming after me. As our company boasts a world-class semiconductor ecosystem, I hope that we as SK hynix employees will set high goals with a sense of challenge. It is vital to come up with many ideas in various areas and constantly challenge ourselves. I am confident that if we keep trying new things, we will be able to develop innovative semiconductors.”

The post Going Beyond the Imagination: Meet the Team Behind the Development of the Fastest LPDDR5X first appeared on SK hynix Newsroom.

A number of disruptive technological innovations have been developed to address these limitations including High-k/Metal Gate (HKMG), which replaces the SiON gate oxide material in the gate of the transistor in DRAM memory with a thin high-k film.

Today, HKMG remains the most significant innovation in logic transistor technology, allowing further scaling to be achieved without degrading reliability or causing current leakage.

SK hynix has dramatically improved transistor performance, including the use of HKMG in its new 1anm LPDDR5X DRAM. This enables aggressive scaling and high efficiency even at low power settings.

In this EE Times column, head of Process Integration Technology Development at SK hynix, Unoh Kwon, discusses what HKMG is and how the company is strengthening its technological competitiveness by applying a HKMG technology platform to other premium products.

As evidenced by the application of the HKMG process to DRAM, we can see that the convergence between logic semiconductors’ advanced technology solutions and DRAM process technology in the semiconductor manufacturing process is well underway, and SK hynix is leading the charge in providing related leading solutions in this field.

To find out more, read Unoh Kwon’s article in full here: SK hynix Leading the Way in the HKMG Revolution

The post SK hynix Leading the Way in the HKMG Revolution first appeared on SK hynix Newsroom.