• First to offer industry’s largest 24GB capacity; Begins supplying product to a global smartphone manufacturer
• Integrates HKMG process, enabling the product to deliver both ultra-low power consumption and high performance
• “Aims to lead premium DRAM market with a priority on meeting customers’ needs”

Seoul, August 11, 2023

SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it has begun supplying the industry’s first 24-gigabyte (GB) Low Power Double Data Rate 5X (LPDDR5X¹) mobile DRAM package to its customers, following the mass production of LPDDR5X in November 2022.

¹ LPDDR: Low Power DRAM for mobile devices, including smartphones and tablets, aimed at minimizing power consumption and features low voltage operation. LPDDR5X DRAM is the 7th generation product, succeeding the series of such that ends with 1, 2, 3, 4, 4X and 5. SK hynix, in January, developed LPDDR5T, which is an upgraded product of LPDDR5X prior to the development of the 8th generation LPDDR6, and is currently processing customer validation.

“The company integrated the High-K Metal Gate (HKMG²) process in the 24 GB LPDDR5X package, enabling the product to deliver outstanding power efficiency and performance,” said SK hynix. “The addition of the 24GB package to our mobile DRAM product portfolio has given us a more flexibility in accommodating customers’ needs.”

² HKMG: A next-generation process that uses a material with a high dielectric constant (K) in the insulating film inside DRAM transistors to prevent leakage currents and to improve capacitance. It reduces power consumption while increasing speed. SK hynix had become the industry’s first to integrate the process in mobile DRAM in Nov. 2022.

The 24GB LPDDR5X package operates in the ultra-low voltage range of 1.01 to 1.12V set by the Joint Electron Device Engineering Council (JEDEC), and can process 68GB of data per second, which is equivalent to transferring 13 FHD (Full-HD) movies in one second.

SK hynix, prior to today’s announcement, has begun supplying its new product to smartphone manufacturer OPPO since last month. OPPO’s latest flagship smartphone ‘Oneplus Ace 2 Pro’, which features SK hynix’s 24GB LPDDR5X package, was launched on August 10^th.

“With the timely supply of 24GB LPDDR5X from SK hynix, we were able to become the first to launch a smartphone that features the industry’s largest capacity DRAM,” said Louis Li, Vice President of Marketing at OPPO. “This new smartphone will allow the customers to enjoy optimized multi-tasking environment as well as extended battery life.”

Due to rapid performance improvement, the roles of modern smartphone have expanded beyond the communication device and into edge device³, and IT experts forecast the gadget to be essential in the AI era. In order to incorporate AI into smartphones, it is crucial to enhance the performance of semiconductor memory, which is the core component, and accordingly, the memory industry is projected to grow further.

³ Edge Device: A device that operates at the edge of a network – an edge-to-cloud continuum – that collects and transmits data to connect the local network to an external wide area network (i.e. cloud, data center), such as personal smart devices, vehicles and Internet of Things (IoT) devices.

“Along with a faster advancement in broader IT industry, our LPDDR products will be able to support a growing list of applications such as PC, server, high-performance computing (HPC) and automotive vehicles,” said Myoungsoo Park, Vice President and Head of DRAM Marketing at SK hynix. “The company will cement our leadership in the premium memory market by providing the highest performance products that meet customers’ needs.”

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), flash memory chips (“NAND flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Joori Roh
E-Mail: global_newsroom@skhynix.com

Technical Leader
Kanga Kong
E-Mail: global_newsroom@skhynix.com

The post SK hynix Starts Mass Production of Industry’s First 24GB LPDDR5X DRAM first appeared on SK hynix Newsroom.

¹HKMG process: A next-generation process that uses a high dielectric constant (K) material in the insulating film of the DRAM transistor to prevent leakage current and improve capacitance. It reduces power consumption while increasing speed. SK hynix introduced the world’s first HKMG process for mobile DRAM in November 2022.

Following the release of samples of the LPDDR5T, the development team sat down to discuss how they once again made the “first and best” product of its kind.

▲The developers of LPDDR5T gathered together to discuss how they improved the product’s speed and power efficiency (from left to right: Kim Hyun-seung, Design Quality Innovation; Kim Ki-ryong, Mobile PE1; Jeong Seung-hyun, DRAM Product Planning; Song Kyung-geun, DRAM PMO; and Cho Sun-ki, Interface)

LPDDR5T: The Fastest Mobile DRAM With Improved Power Efficiency

By adding the letter “T” for Turbo to the standard LPDDR5, it is clear that LPDDR5T is focused on speed. LPDDR5T offers operating speeds of 9.6 Gbps (gigabits per second), an increase of 13% from the LPDDR5X’s speed of 8.5 Gbps.

▲The physical size of LPDDR5T, the fastest mobile DRAM developed using the HKMG process that enables faster speeds while reducing power consumption

In addition to its speed, LPDDR5T also offers ultra-low power consumption. It operates at 1.01 to 1.12 volts, the lowest voltage standard set by the Joint Electron Device Engineering Council (JEDEC). The product’s ultra-low power capabilities are possible thanks to the next-generation HKMG process. This move to further improve energy efficiency aligns with SK hynix’s ESG strategy, and highlights how the company is always looking to push the boundaries of technology.

“We will not be content with our current achievements and continue to challenge ourselves to create the ‘best and the first,’” said the developer team behind LPDDR5T.

Never Content With Being the Best

▲Looking at the newly developed LPDDR5T sample, Kim Hyun-seung recalls when the HKMG process was first applied to a mobile DRAM

The news of SK hynix successfully developing LPDDR5T surprised many as the company had released the industry’s highest performance mobile DRAM LPDDR5X just two months earlier. As it usually takes a reasonable amount of time to improve the performance of DRAMs, it was unusual to see SK hynix announce that it developed a faster product in such a short period.

“With our earlier development of LPDDR5X, we made a quantum leap in performance by introducing the world’s first HKMG process for mobile DRAM. This enabled us to achieve operating speeds above the JEDEC standard of 8.5 Gbps during tests for LPDDR5X,” said Kim Hyun-seung, a technical leader of the Design Quality Innovation team who led the development of both LPDDR5X and LPDDR5T. “We were convinced that we could develop an even faster product at the time, so we continued our research and developed LPDDR5T.”

▲ Kim Ki-ryong (center) discusses how he had to change various options during the development process of LPDDR5T to add stability to a product that had unprecedented operating speeds

Kim Ki-ryong, a technical leader of the Mobile PE1 team who tested the product, talked about how adjustments were needed during the development process.

He said: “During the development of LPDDR5X, we achieved speeds that were higher than the standard operating speed of 8.5 Gbps. However, we encountered problems as higher speeds decreased the stability of the product. So, we worked on changing the design options for future products to minimize the problems that could occur. This was important as it led to the development of LPDDR5T.”

▲Jeong Seung-hyun (center) explaining what it means to have the highest-operating speed of 9.6 Gbps and expressing his pride in making it possible

“LPDDR5T’s operating speed of 9.6 Gbps was considered a speed only achievable with the next generation LPDDR6,” explained Jeong Seung-hyun, a technical leader at DRAM Product Planning. “SK hynix being able to develop LPDDR5T has proved once again that our company is a leader in the mobile DRAM market.”

Song Kyung-geun, a technical leader at DRAM PMO who oversaw the LPDDR5T project, said: “LPDDR5T would not have existed if we were just content with LPDDR5X. This product highlights the challenging spirit of our members who did not stop at developing a product that already had the world’s best performance and power efficiency, but continued striving to bring a product with even better performance to the market.”

SK hynix’s Innovative DNA Overcomes Technical Challenges Once Again

As always, there were many challenges in developing LPDDR5T. First and foremost was the need to convince internal members about developing the product. As Jeong from DRAM Product Planning explains: “People inside our company were even asking if it was necessary to develop LPDDR5T. As we had just developed and released LPDDR5X, it was the general opinion that we should focus on the next generation LPDDR6.”

Kim Ki-ryong also had his own reservations. “I even asked myself if there would be demand for LPDDR5T and whether the product would be marketable. But members of DRAM Product Planning including Jeong saw our willingness to take on a challenge. They started to actively communicate with clients to confirm that the demand and marketability were there for the product, and I was able to test LPDDR5T with confidence from then on,” Kim said.

In addition, there were some challenges that arose due to the product being the fastest of its kind on the market that no one has been able to develop until now. Cho Sun-ki, a technical leader of the Interface team who was in charge of designing the LPDDR5 circuit, explains the challenges the team faced in the verification phase of LPDDR5T.

“The biggest challenge was that it was difficult to physically verify that the high speeds of the product could be realized. Even if the product itself can achieve 9.6 Gbps, there was no test equipment that could verify this while the system also had limits on speed. To solve this issue, we traced every item that could affect the speed and set the speed target values for each item so we could manage and measure better,” Cho recalls.

“There was never a moment when I doubted that the LPDDR5T project would be successful,” said Kim Hyun-seung. “I didn’t expect any major difficulties because the operating speed was already high enough. Although there was a defect caused by the high speed, I believed that we could solve it if we worked together,” he added, showing his absolute trust in the people who he worked together with on this project.

A “One-Team Spirit” Creating the “First and the Best”

▲Cho Sun-ki (left) attributes the success of LPDDR5T’s development to SK hynix’s “one-team spirit” and thanks all the members who contributed

Meanwhile, Cho attributed the success of the LPDDR5T development to SK hynix’s unique “one-team spirit.”

He said: “LPDDR5T is getting a lot of attention because it has the highest operating speed while maintaining an ultra-low voltage, and those of us who are participating in this interview may be viewed as the drivers of the success. However, I would like to highlight those behind the scenes who concerted effort on a much bigger scale with the ‘one-team spirit’. Together, we strived to become the premier semiconductor company in the world, and this was the reason for this project’s success. I think we were able to grow to the next level through this process. I need to give a special thanks to the members who produced the semiconductor device that made it possible to apply the HKMG process.”

Kim Ki-ryong added: “LPDDR5T has now been successfully developed, but there still is a way to go to mass-produce the product. All of us at SK hynix will continue to work as a team to achieve the successful launch of LPDDR5T and create the ‘first and best’ once again.”

▲Song Kyung-geun (center) saying he was proud to secure technological leadership through the development of LPDDR5T

In closing, Song at DRAM PMO expressed SK hynix’s ambition to lead the mobile DRAM market with LPDDR5T.

“We are proud that we have been able to secure technological leadership with LPDDR5T. We have reinforced our commitment to create the first and the best products possible through continuous innovation,” he said. “We will do our best to ensure that LPDDR5T can be mass-produced in the near future so it can be used in various mobile devices by consumers.”

The post Interview: How SK hynix Pushed Technological Limits to Make the Fastest Mobile DRAM, LPDDR5T first appeared on SK hynix Newsroom.

▲SK hynix’s recently released ultra-low voltage LPDDR5X

SK hynix has developed LPDDR5X (Low Power Double Data Rate 5X), the world’s first-ever mobile DRAM with an integrated HKMG (High-K Metal Gate)* process, which was just recently introduced to the market.

*HKMG: A next-generation process that uses a material with a high dielectric constant (K) in the insulating film inside DRAM transistors to prevent leakage currents and to improve capacitance. It reduces power consumption while increasing speed.

The LPDDR5X boasts the industry’s highest energy-efficiency as SK hynix succeeded in reducing power consumption by 25% compared to the previous generation and operates in the ultra-low voltage range of 1.01V to 1.12V set by the JEDEC (Joint Electron Device Engineering Council).

For the LPDDR, which is also called a mobile DRAM, having a low power consumption is its greatest asset, just as its standard name—LP (Low Power)—suggests. As power is limited in mobile devices, it’s necessary to reduce power consumption as much as possible to extend the usage time.

This is why lowering power consumption is just as important as increasing operating speed. LPDDR5X was the first among mobile DRAMs to integrate the HKMG process and see improved performance and a reduction in power consumption, essentially killing two birds with one stone.

As the power consumption of DRAM gets lowered by LPDDR5X, mobile devices can be used for a longer time with a single charge. The reduction in power consumption of such products can subsequently lead to a reduction in the power used by consumers, which is in line with the value of SK hynix’s ESG-centered business management.

Additionally, the current LPDDR5X has an operating speed of 8.5Gbps, 33% faster than the previous generation.

The industry is taking heed that SK hynix introduced the world’s first-ever LPDDR with an integrated HKMG process. The newsroom team sat down with Lee Jae Hyuk (Mobile & Auto Planning), Nam KiBong (Function Device), Cho Sung Kwon (Canopus LPD5 PE), Kim Hyun Seung (Design Quality Innovation), and Lee Wook Jae (MCP/ MO Enablement)—the people behind the successful development of LPDDR5X—to hear the story behind the development process and their unflagging commitment to its launch.

▲SK hynix’s timeline towards developing the world’s first-ever and finest LPDDR, which led to increased operating speeds and lowered power consumption

LPDDR (Low Power Double Data Rate), also known as mobile DRAM, is mainly used in wireless electronic devices including smartphones, laptops, and tablets. LPDDR is smaller and requires less power compared to other DRAM products, reducing the devices’ size and weight as well as extending usage time. The increase in demand for mobile devices, including smartphones, was a critical factor in LPDDR’s rapid development. The recent spotlight on the environment also boosted interest in LPDDR, which requires less power.

▲ LPDDR5X, which is 33% faster than LPDDR5, can download thirteen 5GB movies in 1 second

SK hynix continuously developed LPDDR without missing out on these market trends. The company mass-produced the 18GB LPDDR5, currently the industry’s largest capacity, in 2021 and followed up with the industry’s fastest LPDDR5X (4266MHZ/8.5Gbps) a year later, cementing its leadership in memory semiconductors. SK hynix then went a step further, developing an LPDDR that is 33% faster than the previous generation and allows users to download more than thirteen 5GB videos in one second. The newsroom team went behind-the-scenes to discover how the teams involved developed the industry’s best performing LPDDR5X.

▲ The team members behind the successful development of LPDDR5X smile as they reminisce about making a breakthrough together

How the world’s fastest LPDDR5X was developed

The process also requires countless people’s efforts at the planning, design, production, and sales stages. Lee Jae Hyuk, responsible for product planning during the planning stage of the LPDDR5X development, recalled the planning period as follows:

▲ Lee Jae Hyuk, Technical Leader at Mobile & Auto Planning, smiles as he explains the LPDDR5X planning process

“Planning for a new product usually begins several years in advance. When planning LPDDR5X, it was not easy to meet the 8.5Gbps specification. Various internal departments had differing opinions on how to meet this specification, but we had confidence in our capabilities and successfully completed the development of the industry’s fastest LPDDR5X on time.”

Although the interviewees and their teams can laugh about it now, they had plenty of hurdles to overcome during LPDDR5X development process. Kim Hyunseung, who was responsible for product design, recalled, “There were several challenges during the technology’s development. “How can we increase the speed further?” “How can we reduce the power required further?” It was a continuous and daily series of thoughts and meetings.”

▲ Kim Hyunseung, Technical Leader at Design Quality Innovation, explains how LPDDR5X was successfully developed

Kim Hyunseung explained how the team was able to develop LPDDR5X despite the difficulties: “The development process of LPDDR5X was somewhat unrestrictive. Typically, derivative products such as LPDDRs do not significantly modify existing circuits. However, this time, we were able to freely modify the circuit and adopt new technologies during the design process. I think this unrestrictive atmosphere and the spirit of challenge to introduce new technologies played a big part in the development’s success.”

Looking back at the LPDDR5X development process, a faster operating speed was not the teams’ only concern. Currently, LPDDR is mainly used in the smartphone market, where new products are released at regular intervals, or in other words has a short time-to-market. This meant that the successful development of LPDDR5X had to align with the market’s timetable.

Cho Sung Kwon, in charge of PE (Product Engineering), admitted that he and his team felt enormous pressure. Providing products to the market in time for the development of new smartphone releases is crucial in securing competitiveness, adding to his team’s sense of responsibility. “We are pleased to have developed the LPDDR5X within a limited time frame. Especially in terms of mass production capabilities, I feel prouder of this than any other product I have worked on so far.”

▲ Cho Sung Kwon, Project Leader at Canopus LPD5 PE (second from the right) explains the pressure he felt during the development process

During the testing process, there were moments when the team faced unexpected difficulties and concerns. “Various issues arose during the process of developing LPDDR5X. For each issue, relevant departments collaborated to identify and analyze them and developed alternatives. I credit the successful development to my colleagues’ active responses,” said Nam KiBong, who oversaw PI (Process Integration), which designed numerous process flows in semiconductor production.

A more environmentally friendly LPDDR5X in line with ESG values

SK hynix’s success in developing LPDDR5X does not end with simply developing a faster DRAM. The product operates in the ultra-low voltage range of 1.01 to 1.12V set by JEDEC*, thus reducing power consumption by 25% compared to existing products.

*JEDEC: Joint Electron Device Engineering Council, an organization that sets semiconductor standards.

LPDDR5X’s development process also incorporated ESG management efforts. Lee Jae Hyuk said, “Our work involves not only increasing the usage time of mobile devices, but also reducing power consumption more dramatically by taking the ESG aspect into account as well. Thanks to this, we expect to reduce power consumption by more than 25% compared to the previous generation.”

▲ Lee Wook Jae, Project Leader at MCP/ MO Enablement, explains LPDDR5X’s power consumption reduction

Lee Wook Jae added, “The usage time of a smartphone with LPDDR5X will be longer than that of older-generation smartphones. This is great for consumers, as they can use their phones for longer periods of time on a single charge. It reduces the frequency of charging, which ultimately uses less electricity and leads to carbon savings.”

During the interview, it was suggested that SK hynix must be more active in strengthening ESG management by implementing ESG values. Lee Jae Hyuk said, “For product development, I think that ESG values can be achieved in the actual development stage only when ESG factors are properly implemented in the planning stage.”

Cho Sung Kwon added, “We reduced the testing time further as we tested the products during the development process, and at the design stage, we designed our products to operate with the lowest possible power consumption. We are working together to incorporate ESG values as a whole in all stages of planning, design, and development.”

Building a better SK hynix with a sense of challenge

The development of LPDDR5X, which boasts improved speeds at lower power consumption, would have been impossible without the efforts of SK hynix employees. “We achieved a power consumption reduction of more than 20% for LPDDR5X, and we are proud that we are receiving a lot of positive feedback from our customers,” Lee Wook Jae, who conducts marketing, said as he reported that customers such as SoC companies are complimenting on the product.

▲ Nam KiBong, Technical Leader at Function Device, (center) talks about SK hynix’s positive future

The SK hynix employees are even more optimistic about new semiconductors that will be developed moving forward, and are confident that they can develop faster and more powerful semiconductors. “This is what I know having worked at SK hynix so far. At the beginning of the development process, I kept asking myself, “Why is this so challenging?” However, at the end of the day, once we passed through a few hurdles, things were a lot smoother, and we overcame other challenges. After the LPDDR5X’s successful development we expect to progress into developing higher performance semiconductors,” said Nam KiBong, hinting at his great expectations for the new semiconductors to be developed in the future.

Meanwhile, Kim Hyunseung specifically called for other SK hynix employees to cultivate this sense of challenge. “I have a story I want to tell my colleagues coming after me. As our company boasts a world-class semiconductor ecosystem, I hope that we as SK hynix employees will set high goals with a sense of challenge. It is vital to come up with many ideas in various areas and constantly challenge ourselves. I am confident that if we keep trying new things, we will be able to develop innovative semiconductors.”

The post Going Beyond the Imagination: Meet the Team Behind the Development of the Fastest LPDDR5X first appeared on SK hynix Newsroom.

Speeding towards the future of innovation, teams at SK hynix are often focused on the years to come – rather than on those that have passed. It is milestone moments like the end of a decade that offer us a unique opportunity to pause and reflect on our accomplishments and achievements.

As the decade draws to a close, SK hynix takes a look back at the 10 breakthrough moments in chronological order that defined it – and that will continue to define our future.

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1. Full-scale mass production of 16nm NAND flash(November 2013)

In order to actively respond to the needs of its customers, SK hynix started the full-scale mass production of 16nm 64Gb (Gigabit) MLC (Multi Level Cell) NAND Flash. This innovation brought the industry’s thinnest process technology and was more cost competitive due to its smaller chip size. The announcement began SK hynix’s reputation to bring forth a competitive NAND portfolio with high reliability and endurance.

2. Development of the world’s first next-generation mobile memory LPDDR4(December 2013)

At the end on 2013, SK hynix took large steps to heighten its technology leadership by developing the world’s first 8Gb LPDDR4 product with 20nm-class technology. LPDDR4 was the next generation mobile DRAM interface, which was on the process of standardization at that time, and gave customers ultrahigh speed and low power consumption. In fact, the product ran two times faster and does so at lower voltage than of its existing LPDDR3.

3. Development of the world’s first, highest density 128GB DDR4 module(April 2014)

SK hynix made a significant advancement in the ultrahigh density server market with the announcement that it had developed the world’s first and highest density of 128GB (Gigabytes) module based on 8Gb DDR4 using its advanced 20nm-class technology. This module has double density compared to the company’s existing 64GB by taking advantage of TSV (Through Silicon Via) technology. This product helped cement the company’s reputation on providing premium DRAM with high density, ultrahigh speed, and low power consumption.

4. Development of the world’s highest density 16GB NVDIMM(October 2014)

In late 2014, SK hynix announced that it had developed the world’s highest density 16GB NVDIMM (Non-Volatile DIMM) based on 4Gb DDR4 using its advanced 20nm-class technology. By combining DRAM, NAND Flash and the controller in a single module, this product was able to send DRAM data to NAND Flash, whose density was two times bigger than the DRAM, in an unanticipated power loss, thus saving and restoring data safely. Ahead of mass production, SK hynix provided samples to several customers and the product got attention from corporations developing servers and operating systems in need of higher stability.

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5. Launch of the world’s first, highest density 8GB LPDDR4X(January 2017)

SK hynix launched 8GB LPDDR4X mobile DRAM, the world’s highest density in the LPDDR4X standard, using its state-of-the-art dual channel 16Gb chips aimed to suit the upcoming flagship smartphone lineups. This technology allowed mobile device users to maximize their experiences and was expected to be included in various applications such as high-end laptops and automotive electronics.

6. Introduction of the world’s highest 72-layer 3D NAND Flash(April 2017)

In 2017, SK hynix unveiled the industry’s first 72-Layer 256Gb 3D NAND Flash based on its TLC (Triple-Level Cell) arrays and own technologies. This innovation stacked 1.5 times more layers than the already widely available 48-Layer 3D NAND, achieving 30% more productivity. 3D NAND is widely used in AI (Artificial Intelligence), big data and cloud storage. With this achievement, SK hynix secured the industry’s finest 3D NAND product portfolio, solidifying its business competence in NAND memory solutions.

7. Launch of the world’s first “CTF-based 96-layer 4D NAND Flash”(November 2018)

SK hynix was the first in the industry to combine the 3D CTF (Charge Trap Flash) design with PUC (Peri. Under Cell) technology. This 96-Layer 512Gb “CTF-based 4D NAND Flash” based on its TLC arrays reduced more than 30% of chip size and increased bit productivity per wafer by 49% compared to the company’s 72-layer 512Gb 3D NAND. It also provided a 30% higher write and 25% higher read performance. This achievement marks a milestone for the company’s NAND Flash business as a platform for developing future products.

8. Demo of the industry’s first ZNS-based SSD solution for data centers(March 2019)

SK hynix began 2019 with a strong first quarter when the company demonstrated the industry’s first ZNS (Zoned Namespaces) SSD solution at the 2019 OCP Global Summit in San Jose, CA. The ZNS SSD boasted 30% improvement in speed and reliability compared to the existing SSD, as well as more than four
times longer lifetime, making it suitable for the next-gen data centers. SK hynix plans to launch commercial products in the first half of 2020.

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9. Mass production of the world’s first 128-layer 4D NAND(June 2019)

In another major milestone this year, SK hynix started mass-producing world’s first 128-Layer 1Tb (Terabit) TLC NAND, the highest vertical stacking and highest density for a TLC NAND Flash chip. This feat was accomplished only eight months after the company previously announced the 96-Layer 4D NAND last year. The new NAND Flash chip has significantly improved profitability with 40% higher productivity and 60% better investment efficiency, targeting high-capacity mobile and enterprise SSD customers.

10. Development of the world’s fastest High Bandwidth Memory, HBM2E(August 2019)

Earlier this year, SK hynix developed the world’s fastest high bandwidth memory, HBM2E. As the DRAM technology here supports 460GB per second (3.6Gbps per Pin) data processing speed performance, the product is expected to be adopted by high-end machine learning, supercomputers and artificial intelligence. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity compared to the previous HBM2. It will strengthen SK hynix’s leadership in the premium DRAM market.

If we had to sum up the progress of the memory industry – and the continued improvement of SK hynix’ products – over the past 10 years, we would say: smaller, better, faster. From 2013’s mass production of the 16nm NAND flash to 2017’s introduction of the world’s highest 72-layer 3D NAND Flash, to 2019’s development of the world’s fastest HBM2E, we’ve delivered reduced chip sizes, ultrahigh speeds, and higher-quality experiences to our clients around the world.

While no one knows for certain what the next decade will bring, we certainly can say that the innovations of SK hynix will be at its core.

The post A Decade of Innovation: SK hynix Looks Back at its Top Advancements 10 Years of Trailblazing & Industry “Firsts” first appeared on SK hynix Newsroom.