Figure 1. SK hynix’s booth at FMS 2023 featured some of the company’s latest products and technologies

As the world’s largest memory and storage trade show, the annual Flash Memory Summit (FMS) is renowned for exhibiting revolutionary high-speed memory and SSD products. At FMS 2023 held August 8^th-10^th at the Santa Clara Convention Center in California, SK hynix continued this legacy of innovation by showcasing groundbreaking memory solutions under the slogan “United Through Technology”. During the event, executives from SK hynix gave a keynote speech to share the companies’ developments in the memory sector.

Leading 4D NAND Solutions Key to the Multimodal AI Era

Figure 2. SK hynix’s EVP and Head of NAND development Jungdal Choi and EVP and Head of Solution Development Hyun Ahn during their keynote speech

On August 8^th, SK hynix’s EVP and Head of NAND development Jungdal Choi along with EVP and Head of Solution Development Hyun Ahn gave a keynote speech titled “Industry-Leading 4D NAND Technology and Solutions Enabling the Multimodal AI¹ Era”.

¹Multimodal AI: Combines various data types (image, text, speech, numerical data, etc.) with multiple intelligence processing algorithms to achieve higher performance levels.

Choi revealed that the company is currently developing the world’s first 321-layer NAND product, the fifth generation of 4D NAND. Choi said that the new product, which is the first in the industry to exceed 300 layers, is set to help the company solidify its technological leadership in NAND. Meanwhile, Ahn introduced the company’s ultra-high performance UFS 4.0 and PCIe 5^th generation (Gen5) SSD products for use in data centers and PCs. The continuous development of SSD products is essential as they are set to become an essential storage solution for application with multimodal AI, which analyzes and calculates vast amounts of data on various platforms. The pair concluded by stating that SK hynix is committed to supporting multimodal AI and other advanced technologies by developing next-generation PCIe Gen6 SSDs and UFS 5.0 memory-based products.

Breaking Barriers: Unveiling Pioneering 4D NAND & SSD Solutions

Figure 3. SK hynix’s product line-up, including its 4D NAND solutions, were on display

SK hynix is continually looking to advance its 4D NAND technology in terms of performance and reliability. The company’s development of the industry’s first 96-layer 4D NAND based on charge trap flash² (CTF) in 2018 became a launchpad for further innovations, leading to the development of its 238-layer 4D NAND four years later in another industry first. Continuing this line of industry firsts, SK hynix showcased samples of its 321-layer 1 Tb 4D NAND, which offers a 59% improvement in productivity compared with the previous generation 238-layer, 512 Gb NAND chips. This improvement was realized by technological developments that enabled the stacking of more cells and a larger storage capacity on a single chip, thereby increasing the total capacity of a single wafer.

The groundbreaking 321-layer NAND product was later presented at SK hynix’s booth along with other NAND solutions, including the company’s PCle³ Gen5 enterprise SSD (eSSD) called PS1030 which utilizes V7 NAND. The PS1030, which was applied to a supermicro server for the demonstration, delivers the fastest sequential read speed in the industry—14,800 MB/s. It also offers a random read performance of 3,300 kIOPS⁴, highlighting its specifications as a high-performance eSSD.

²Charge trap flash (CTF): Unlike floating gate, which stores electric charges in conductors, CTF stores electric charges in insulators, which eliminates interference between cells, improving read and write performance while reducing cell area per unit compared to floating gate technology.

³Peripheral Component Interconnect Express (PCle): A serial-structured, high-speed input/output interface used on the motherboard of digital devices.

⁴Thousand Input/Output Operations Per Second (kIOPS): A measure of how many read and write operations a storage device can perform in a second.

Visitors to the SK hynix booth could also see another one of the company’s SSDs, the PCIe Gen4 PC811.  Applied to a PC for the demonstration, the PC811 is SK hynix’s first V8 NAND-based mainstream client SSD (cSSD). Other SSDs on show included its high-speed Platinum P41, ultra-low power Gold P31, and the company’s first portable SSD for consumers, SK hynix Beetle X31.

Unleashing the Power of HPC With KV-CSD

Figure 4. SK hynix’s Woosuk Chung, team leader for the Computational Storage department, held a session on KV-CSD, which was also displayed at the company’s booth

SK hynix also held the second demonstrations of its pioneering Key Value Store Computational Storage Device (KV-CSD) following on from its debut at last year’s FMS. Co-developed with U.S.-based Los Alamos National Laboratory (LANL), the KV-CSD is a next-generation intelligent storage product which improves write and read capabilities for high performance computing (HPC).

The impact of the KV-CSD was discussed in a session on August 10^th by SK hynix’s Woosuk Chung, team leader for the Computational Storage department. Titled “Architecture of a Query Accelerating KV-CSD in a HPC System”, the talk revealed how the new KV-CSD overcomes the limitations of software key-value stores.

High-Performance Mobile and Automotive Solutions

Figure 5. SK hynix’s mobile and automotive solutions

SK hynix also exhibited its technologies for the mobile and automotive sectors at FMS 2023. The company’s line-up of V7 512 Gb universal flash storage⁵ (UFS) products was on display, including those based on UFS 2.2, UFS 3.1, and UFS 4.0—the latest specification which offers enhanced bandwidth speed and efficiency. Additionally, the company’s universal multichip package⁶ (uMCP), which combines its mobile DRAM LPDDR and UFS, was also presented at the booth.

Moving to solutions for the automotive market, SK hynix’s LPDDR5X mobile DRAM and HBM2E DRAM were among the products displayed as they are essential components of Advanced Driver Assistance Systems (ADAS)⁷. The HBM2E highlights SK hynix’s strength in the automotive sector as it is the only company to develop HBM products specifically for the industry. As well as ADAS, SK hynix’s automotive solutions support other functions. For example, its eMMC 5.1 embedded multimedia card is utilized for in-car connectivity, while its UFS 3.1-based and SSD products are applied for in-vehicle infotainment and storage, respectively.

⁵Universal Flash Storage (UFS): A breakthrough type of flash memory that can simultaneously read and write data. Due to its low-power consumption, high-performance and reliability, UFS is widely applied in mobile devices.

⁶Universal multichip package (uMCP): A multi-chip package that combines DRAM and NAND flash into one product.

⁷Advanced Driver Assistance Systems (ADAS): A system that utilizes various technologies to help drivers in routine navigation and parking without fully automating the process.

Never Standing Still

SK hynix always has one eye on the future, and this was exemplified during its successful time at FMS 2023. Despite already offering a range of industry-leading solutions, the company will not rest on its laurels as it aims to further improve it line-up of NAND and other high-performance memories in the future.

The post FMS 2023: SK hynix Showcases World’s First 321-Layer NAND Samples & Storage Solutions first appeared on SK hynix Newsroom.

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Seoul, June 17, 2016

SK hynix Inc. (or ‘the Company’, www.skhynix.com) announced it held ‘2016 SK hynix Mobile Solution Day’ yesterday in Shenzhen, China. SK hynix expects to have an advantage in a competitive mobile market by consolidating its status in China with strengthened strategic partnership with Chinese customers and partners.

The Company has hosted the Mobile Solution Day annually since 2014 and did the event for this year under the slogan of ‘Advance Beyond the Limits’. Over 400 people attended the event showing a great interest in mobile DRAM, NAND Flash solutions and CMOS Image Sensors of SK hynix. Particularly, the Company’s large customers in China such as Huawei, Xiaomi, Lenovo and China Mobile, the world’s biggest telecommunication company attended. Plus, Qualcomm and Mediatek representing SoC(System-on-Chip) makers also joined.

Furthermore, rising stars in the industry such as Oppo and Vivo as well as the world’s fourth largest telecom operator China Unicom participated in the event, confirming remarkable attention to SK hynix in China. The chipmakers such as Qualcomm, Mediatek and Spreadtrum stressed the importance of cooperation with SK hynix in China while introducing their product roadmap.

SK hynix added the Company made a great appeal to the participants with its product portfolio. The Company presented a lot of high performance solutions anticipated to be the main products henceforward. For DRAM, the Company unveiled 2Znm-based 6GB(Gigabytes) and 4GB LPDDR4(Low Power DDR4) and announced it will develop LPDDR4X solutions that have 20% of superiority in power efficiency to current LPDDR4 within the latter half.

For NAND Flash, SK hynix indicated its 2nd generation 3D NAND-based 128/64/32GB mobile UFS(Universal Flash Storage) 2.1 solutions have been in process of customer qualification, moreover, 64/32/16/8GB automotive eMMC(embedded Multi Media Card) 5.1 samples had been sent to several clients. Besides, SK hynix displayed CIS products from 5M to 13M pixels to meet with various customers’ demands. As a result, the Company strongly impressed its aim to elevate the reputation in the mobile market.

“China has grown up as the world’s biggest area of smartphone consumption and production and become a key country to the mobile eco system with its quantitative and qualitative development” said executive vice president Hyunjong Song, the Head of Global Sales & Marketing. “SK hynix will reinforce its support of optimum mobile solutions to the customers and strategic partnership with the business partners” he added.

Media Contact

SK hynix Inc.
Public Relations

Assistant Manager
Heeyoung Son
Phone: +82.31.8093.4719
E-Mail: heeyoung.son@sk.com

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Seoul, December 30, 2013

SK hynix Inc. (or ‘the Company’, www.skhynix.com) announced that it has developed the world’s first 8Gb(Gigabit) LPDDR4(Low Power DDR4) using its advanced 20nm class technology. LPDDR4 is the next generation mobile DRAM interface on the process of standardization which features ultrahigh speed and low power consumption.

This new product works at 3200Mbps and ultra low-voltage of 1.1V which runs two times faster than 1600Mbps and does at lower voltage than 1.2V of existing LPDDR3. The Company has been strengthening its cooperation with the customers for the standardization of this new mobile DRAM by providing the samples of LPDDR4 to major customers and SoC(System on Chip) companies.

Especially, SK hynix is to continuously maintain its technology leadership in the mobile market by developing the world’s first 8Gb LPDDR4 following the development of the world’s first 8Gb and 6Gb LPDDR3. The Company plans to start mass production of it from the second half of next year.

“SK hynix secured its technology leadership by developing the world’s first next generation mobile memory LPDDR4 and providing samples of the product to the customers” said Senior Vice President Richard Chin, the Head of Global Sales Marketing. “The Company will further strengthen its competitiveness in the mobile area with the development of high density, ultrahigh speed and low power consuming products” he added.

The new interface LPDDR4 is expected to be loaded onto flagship mobile devices at the end of 2014 and is anticipated to be commercialized regularly from 2015. Plus, it is expected to be the main product in the industry from 2016.

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About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), Flash memory chips (“NAND Flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com.

Media Contact

SK hynix Inc.
Public Relations

Assistant Manager
Heeyoung Son
Phone: +82.2.3459.5316
E-Mail: heeyoung.son@sk.com

The post SK hynix Developed the World’s First Next Generation Mobile Memory LPDDR4 first appeared on SK hynix Newsroom.

SK hynix (‘the Company’, www.skhynix.com) announced that it has introduced DDR3L-RS(Reduced Standby) DRAM for mobile solutions using its 20nm class technology. This product significantly reduces the standby power consumption.

By using cutting-edge 20nm class technology and efficiently managing standby current, this DDR3L-RS product reduces 70% of standby power compared to existing DDR3L DRAM while it maintains DDR3L performance. DDR3L DRAM which has recently gone mainstream works at 1.35V, while DDR3 DRAM does at 1.5V.

This product is available in both chip and module types. Chips for on-board use enable thinner devices to implement various densities with 2Gb(gigabit), 4Gb and 8Gb. SO-DIMMs(Small Outline Dual Inline Memory Module) are also provided with densities of 2GB(gigabyte), 4GB and 8GB.

The DDR3L-RS is expected to evolve into the best memory solution in the Ultrabook™ and tablet PC markets which highly require mobility and low power figure. The product is especially price competitive than LPDDR3 and significantly reduces standby current than existing DDR3L. As it combines performances of mobile DRAM and PC DRAM, SK hynix expects to penetrate into the new market including low to mid-end ultabooks and tablets with this intermediary product and lead the mobile market.

“With the release of the new DDR3L-RS DRAM, we are now able to provide price competitive and low power products to the customers and these products will open a new area of memory semiconductor as one of the best memory solutions for the low to mid-end market,” said Mr. Ji Bum Kim, Head of Worldwide Marketing & Sales Division of SK hynix.

According to market research firm iSuppli, the portion of the ultrathin shipments in the laptop market is expected to be 11% in 2012 and will eventually be expanded up to 39% in 2014. In 2015, it will jump to the half of the lap top market with 52% share.

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About SK hynix Inc.

SK hynix Inc., Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), Flash memory chips (“NAND Flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com.

Media Contact

SK hynix Inc.
Corporate Communications

Senior Manager
Seong-Ae Park
Phone: +82.2.3459.5325
E-Mail: seongae.park@sk.com

The post SK hynix Introduces DDR3L-Reduced Standby for Mobile Solutions first appeared on SK hynix Newsroom.

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Seoul – February 27, 2012

hynix Semiconductor Inc. (‘hynix’ or ‘the company’, www.hynix.com) introduces ‘Smart Mobile Solution’ products at Mobile World Congress (‘MWC’) 2012 in Barcelona, Spain. Hynix participates in this world’s largest exhibition for the mobile industry with SK Telecom and this is the first ever display.

The concept of the hynix’s exhibition is ‘hynix enabling a ubiquitous world’. The company introduces a various series of mobile solutions including 20nm class 4Gigabit (‘Gb’) DDR3 DRAM and 30nm class 4Gb LPDDR3 DRAM. It also sees a possibility of growth in the new market such as smart car by introducing ‘Infotainment’ products which are developed after a yearlong collaboration with NVIDIA.

Display the next generation products for smart mobile solutions

▲ 20nm Class 4Gb DDR3 DRAM

The newly developed 20nm class 4Gb DDR3 DRAM is targeting high density applications such as high-end virtualized servers, datacenter servers and high performance Tablet and Ultrabooks. This product meets the JEDEC standard.

The product offers maximum data transfer speed of 2133Mbps (Megabits per second) or 4.3 GB/s (Gigabytes per second) bandwidth with a 16-bit I/O, supporting the ultra low voltage operation of 1.25V. It saves more than 40% power consumption than the existing 30nm class products. In terms of production efficiency, it is increased by more than 60% over the 30nm class process technology.

According to a market research firm, iSuppli, demand for 2Gb DDR3 is expected to gradually decline after a peak in this year with 78% of bit shipments while 4Gb DDR3 is expected to become a mainstream. hynix plans to start volume production of the new 20nm class 4Gb DDR3 DRAM in the first half of 2012. High density of 64Gigabyte (‘GB’) modules for the cloud computing market will be also added to our portfolios.

▲ 30nm Class 4Gb LPDDR3 DRAM

The company also introduced newly produced 30nm class 4Gb LPDDR3 DRAM which are customized for the high-end smartphone, Tablet and Ultrabooks. This product provides MCP (Multi Chip Package) and PoP (Package on Package) platforms. hynix meets customer needs with its 8Gb (1GB) and 16Gb (2GB) density products which contain two layers and four layers respectively. It boasts maximum operating speed of 1,600Mbps at 1.2V power supply, and processes up to not only 6.4GBps with a 32-bit I/O, but also 12.8GBps with dual channel configuration. While this product not only maintains the same standby power consumption with LPDDR2, it also provides high speed operation up to 50% of improvement which enables to support low power and high performance solutions. With its great performances, the product which meets almost all the JEDEC standard specifications, are well suited for mobile applications.

According to the iSuppli, due to increasing requirement of high performance mobile DRAM, the demand for LPDDR3 is expected to increase up to 56% in 2015 and LPDDR3 as a mobile DRAM will become the mainstream.

“hynix has a variety of mobile products which satisfy requirements of high density, high performance and low power consumption.”, said Mr. Ji-Bum Kim, Chief Marketing Officer of hynix. “hynix is able to provide competitive solutions to the mobile application market.”, he added.

hynix also introduced other mobile solutions including SSD (Solid State Drive) with density of 128GB~512GB and CIS (CMOS Image Sensor) as well.

Enter the infotainment memory semiconductor market

Another items including 30nm class 4Gb DDR3 consumer DRAM and eMMC (Embedded Multi Media Card or ‘e-NAND’ of hynix brand) NAND Flash are exhibited. Collaborating with NVIDIA, hynix entered the infotainment memory semiconductor market. At CES2012 held in last January, several prestigious Germany automobile all equipped with hynix memory were introduced.

The infotainment system, which integrates navigation, Internet, video, and location based services, is an evolution from the single function navigation systems currently installed in automobile. The automobile industry sees major growth opportunities in smart cars with infotainment systems over the next few years. This automobile semiconductor market is especially difficult to enter since it requires higher reliability, quality condition and longer qualification process which takes more than a year.

hynix expects this participation to this MWC will boost its business scope to the smart mobile solution market and strengthen relationship with related customers. Through cooperation with SK Telecom, the Korea’s number one mobile carrier, hynix will enlarge the business area and have closer access to the mobile market trends and developments. Both companies will continuously seek global business opportunities which are creating a synergy by combining together.

About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) , Flash memory chips (“NAND Flash”) and CMOS Image Sensor (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.

Media Contact

SK hynix Inc.
Corporate Communications

Senior Manager
Seong-Ae Park
Phone: +82.2.3459.5325
Fax: +82.2.3459.5333
E-Mail: seongae.park@sk.com

The post hynix Semiconductor Introduces Smart Mobile Solutions at Mobile World Congress first appeared on SK hynix Newsroom.

hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) announced that it has developed the world’s first 2Gb(Gigabit) Low Power DDR2 DRAM for mobile applications using the company’s leading edge 40nm class process technology.

This product works at 1,066 Mbps(Megabits per second), which is the fastest speed among the current mobile DRAM solutions and provides a high density mobile DRAM solution in MCP(Multi Chip Package) or PoP(Package on Package) types. The device operates at such a low voltage of 1.2V and processes up to 4.26GB(Gigabytes) of data per second with a 32-bit I/O, providing high bandwidth. It consumes 50% less power than existing mobile memory solution’s case.

The product meets JEDEC standards and is designed for the use in the next generation Smartphone, Smartbook and Tablet PC applications. hynix plans to start volume production of this product in the first half of this year in order to satisfy the increasing demand on high density mobile DRAMs for high performance mobile applications.

Since its first introduction of 2Gb mobile DDR using 50nm class process technology in 2008, also a world’s first, hynix has been positioning itself as a technology leader in Mobile DRAMs and a major supplier for a wide range of mobile applications.

hynix plans to maintain its competitiveness in a diversified product line-up and capitalize on its technology leadership in the future.

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About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) , Flash memory chips (“NAND Flash”) and CMOS Image Sensor (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.

Media Contact

SK hynix Inc.
CORPORATE COMMUNICATIONS

Assistant Manager
Seong-Ae Park
Phone: +82.2.3459.5325
Fax: +82.2.3459.5333
E-Mail: seongae.park@hynix.com

The post hynix Semiconductor Announces World’s First 2Gb Mobile Low Power DDR2 DRAM first appeared on SK hynix Newsroom.

hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) announced the 4Gb (Gigabits) mobile DDR SDRAM is now supported on Intel’s ‘Moorestown’ platform for MID (Mobile Internet Device) applications.

This high density memory device packs twice the storage capacity over current 2Gb mobile memory solutions and is offered in small form factor packages such as MCP (Multi Chip Package) and PoP(Package on Package). It boasts maximum operating speed of 400Mbps (Megabits per second), processing up to 1.6GB (Gigabytes) of data per second with a 32-bit I/O.

The product complies with the JEDEC standards, and is well suited for next generation mobile applications such as MID, NetBooks and High-end smart-phones requiring high density, high speed memory and featuring low power consumption. High bandwidth memory functions such as high speed downloads, graphics and video processing will be well supported by this product.

The company plans to start mass production of this product in the third quarter of 2009, to satisfy the increasing demand for high density and high performance memory in mobile applications.

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About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) , Flash memory chips (“NAND Flash”) and CMOS Image Sensor (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com.

Media Contact

CORPORATE COMMUNICATIONS

Assistant Manager
Seong-Ae Park
Phone: +82.2.3459.5325
Fax: +82.2.3459.5333
E-Mail: seongae.park@hynix.com

The post hynix Introduces 4Gb Mobile DDR SDRAM Supported on Intel’s Moorestown Platform first appeared on SK hynix Newsroom.

hynix Semiconductor, Inc. (‘hynix’ or ‘the Company’, www.hynix.com) announced it has developed the world’s first 2Gigabit mobile DRAM using 54nm process technology.

This product provides twice as much storage capacity over current 1Gb mobile solution which has been the highest density offered among the mobile DRAM products in MCP(Multi Chip Package), PoP(Package on Package) platform. It boasts maximum operating speed of 400Mbps(Megabits per second) at 1.2V power supply and processes up to 1.6 Gigabytes of data per second with a 32-bit I/O. Moreover, the new product consumes less power than existing memory solutions.

Besides its various features, the new product also has function of hynix’s ‘One Chip Solutions’. It offers flexible options to meet the specific needs of the customers for both SDRAM and DDR DRAM interfaces, and both x16 and x32 organizations on a single chip.

With its great performances, the product which meets JEDEC standard is well suited for the next generation applications of MID(Mobile Internet Device) and UMPC(Ultra Mobile PC) as well as higher density required products.

This 2Gigabit mass storage solution meets all major technical requirements of mobile products which are high memory density, low power consumption, fast operating speed and small size features. hynix plans to start mass production in the first half of next year in order to satisfy the increasing demand for high performance mobile applications.

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About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) and Flash memory chips to a wide range of established international customers. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com

Media Contact

CORPORATE COMMUNICATIONS

Assistant Manager
Seong-Ae Park
Phone: +82.2.3459.5325
Fax: +82.2.3459.5333
E-Mail: seongae.park@hynix.com

The post hynix Semiconductor Developed the World’s First 2Gb Mobile DRAM first appeared on SK hynix Newsroom.

hynix Semiconductor Inc., (www.hynix.com) today announced that it has jointly developed a camera module for the mobile handset market with Konica Photo Imaging (www.konica.com).

The newly developed module uses two different types of Complementary Metal-Oxide Semiconductor (CMOS) image sensor chips manufactured with 0.35-micron technology. hynix also developed an imaging and coloring technology with Konica, a leading lens-maker for optical discs. With the CMOS image sensor chip designed by Konica’s micro optical and packaging technology, the module has three models, which include two 1-inch Common Intermediate Format (CIF) types with 100,000 pixels (short-focused product and double optical zoom product) and a 0.25-inch Video Graphic Array (VGA) type with 300,000 pixels.

The short-focused CIF model has a module height of 5mm, the double optical zoom model has height of 11mm and the VGA model has 6mm module height. In particular, the newly designed CMOS image sensor chip replaces the existing two-chip system (sensor chip and signal processing chip) to realize compact size and to reduce power consumption. This cost-cutting chip is easily adapted to other applications, other than mobile handsets, thus extending hynix’s competitiveness in product development with this leading technology.

The lens used in the module contains an adjustment-free focus feature, which adjusts automatically, producing clear images for the consumer regardless of the distance from the object. “The mobile handset camera market is expected to grow rapidly with up to 30 million units this year and 100 million units in 2003,”said Sung-hyun Choi, Senior Vice President of the Standard Products Division. “We plan to develop future modules with more than 1 million pixels and further increase hynix’s revenue over the next three years.”

The post hynix Develops Micro Camera Module for Mobile Handsets first appeared on SK hynix Newsroom.