Gold P31, SK hynix’s PCIe NVMe M.2 SSD, has garnered consistent praise from professional tech reviewers for its unique performance and power efficiency benefits. The drive released last year in 1TB and 500GB capacities, and is now adding a 2TB option for users of high-capacity storage including gamers and content creators. The 2TB version will be marked with a sleek, black-color PCB (Printed Circuit Board) instead of the usual green.

The 2TB Gold P31 will offer 3,500MB/s in sequential reads and 3,200MB/s in sequential writes, the highest from a PCIe Gen3 drive, as well as an industry-leading endurance rating of 1,200 TBW (for 2TB capacity; Terabytes Written: total amount of data an SSD can write in its lifetime), thus providing performance, capacity, power efficiency, and reliability all around. With read speeds of 172.2MB/s per watt of power, the Gold P31 is indeed 434% more efficient than comparable products (for 1TB capacity; Tallis, Billy. “The Best NVMe SSD for Laptops and Notebooks: SK hynix Gold P31 1TB SSD Reviewed.” AnandTech. August 27, 2020).

Sanglae Lee (Robert), Head of Marketing at SK hynix said, “For customers’ demand for high-capacity and high-performance, the 2TB Gold P31 SSD will be their best choice. SK hynix will continuously expand the consumer SSD product line-up in order to enhance its market presence.”

SK hynix sells the PCIe NVMe Gold P31 lineup along with a SATA-interfaced Gold S31 series, both of which are available now on Amazon.com. The drives will be offered on Amazon’s Deal of the Day sale on August 23 to celebrate the 2TB Gold P31’s launch.

Figure 1. SK hynix 2TB Gold P31 consumer SSD

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■ Annotation

1) PCIe (Peripheral Component Interconnect Express): via direct connection between storage device and mainboard, PCIe interface supports faster input/output transfer rate than SATA (Serial Advanced Technology Attachment) interface, which connects storage device and mainboard through cables.

2) NVMe (Non-Volatile Memory Express): a communication protocol standard connected via PCIe interface, NVMe is a more advanced standard for ultra-high speed, high capacity data processing, supporting six times faster transfer rate than AHCI (Advanced Host Controller Interface) standard.

3) M.2: a form factor of connecting storage device to a mainboard, M.2 supports faster transfer rate than existing SATA form factor, and its small size allows for small devices such as laptops and tablet PCs.

4) Sequential Read/Write: data transfer rate while reading or writing data on a single file
* Respectively, random read/write indicates data transfer rate while reading or writing data on multiple files (ex. running a program).

The post SK hynix Launches 2TB “Gold P31” Ultra-low-power Solid State Drive first appeared on SK hynix Newsroom.

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Seoul, April 07, 2020

SK hynix Inc. (or “the Company,” www.skhynix.com)) today announced the availability of the “PE8000” series, its newest and most advanced line-up of enterprise Solid State Drives (eSSDs). The PE8000 series is designed to meet the diverse needs of datacenter customers.

PE8010 and PE8030 are the Company’s first Non-Volatile Memory express (NVMe) SSDs supporting the PCIe Gen4 Interface. Both drives feature the Company’s 96-layer Triple-Level Cell (TLC) 4D NAND flash and an in-house controller, providing a maximum capacity of 8TB, and are compatible with U.2/U.3 form factors. PE8010 is tailored to read-intensive workloads, while PE8030 is optimized for mixed-use.

The two products boast the strongest performance among low-power PCIe Gen4 SSDs in the market. Both PE8010 and PE8030 can deliver sequential read speeds of up to 6,500MB/s and sequential write speeds of up to 3,700MB/s, with random read and write of up to 1,100K and 320K Input/output operations per second (IOPs), respectively. Compared to the Company’s previous solution launched in 2019, PE8010 offers substantial performance improvements of 103% for sequential reads and 357% for random writes at maximum power consumption of 17W. Both drives are now sampling with customers.

Meanwhile, PE8111 is a high-capacity storage solution optimized for read-intensive applications, built with SK hynix’s state-of-the-art technology, the world’s first 128-layer 1Tb (Terabit) TLC 4D NAND flash. SK hynix is currently developing a 16TB version of PE8111 eSSD in the new EDSFF 1U Long (E1.L) form factor, and plans to develop a 32TB solution in the future. The Company is slated to start sampling the 16TB PE8111 eSSD in the second half of this year.

PE8111 is specifically optimized for Open Compute Project (OCP) storage platforms, supporting sequential read and write speeds of up to 3,400MB/s and 3,000MB/s, and random read and write of up to 700K and 100K IOPs, respectively. Most notably, the solution provides the same capacity with only half the amount of NAND dies compared to the solution based on 512Gb (Gigabit) NAND flash. As a result, the solution offers superb performance, power efficiency, and price competitiveness, excelling across the board in the existing eSSD solutions market.

SK hynix is a global memory semiconductor manufacturer with DRAM, NAND flash, and controllers in its portfolio, a full range of technologies for SSDs. Despite being a relative latecomer to the eSSD market, the Company continues to strengthen its presence with the expertise and know-how gained as a leading DRAM manufacturer. SK hynix will keep expanding thus with vigorous product development and increasingly diverse offerings going forward.

“SK hynix has successfully introduced its PCIe Gen3 eSSD products to the market, solidifying its competitive position in the enterprise storage business,” said Vice President Samil Kim, head of the eSSD business at SK hynix. “We will reinforce our technology leadership through the mass production of our PCIe Gen4 products in the second half of this year, and also provide eSSDs with high performance and reliability to our hyperscaler and enterprise OEM customers.”

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), flash memory chips (“NAND flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com), news.skhynix.com).

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader
Hyun Kyung Olivia Lee
E-Mail: global_newsroom@skhynix.com

Technical Leader
Jaehwan Kevin Kim
E-Mail: global_newsroom@skhynix.com

Technical Leader
Eun Suk Yixi Lee
E-Mail: global_newsroom@skhynix.com

The post SK hynix’s Low-Power NVMe PCIe Gen4 Enterprise SSDs: Available Now for Sampling first appeared on SK hynix Newsroom.

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Seoul, June 20, 2019

SK hynix Inc. (or ‘the Company’, www.skhynix.com) announced today that it launched a new low-power Non-Volatile Memory express (NVMe) Enterprise SSD (eSSD) with the 72-layer TLC 3D NAND flash that offers best-in-class performance for power as well as Quality of Service.

The product features an in-house NVMe controller on top of the 72-layer 3D NAND technology currently in mass production. With the launch, SK hynix has established itself as a memory producer that designs, develops, and mass-produces all key components, from NAND and DRAM to controllers, in-house, for not only Client but also Enterprise applications.

Meanwhile, power consumption of datacenters is an increasingly important concern in terms of energy and environmental preservation, as their footprint grows amid rising enterprise demand for cloud, Artificial Intelligence (AI), and Machine Learning (ML). As datacenters are expected to account for one-fifth of the world’s energy consumption in 2025, low-power components that enable datacenter energy efficiency are expected to only grow in importance.

The new NVMe SSD targets the mainstream eSSD market with optimum performance, power and cost. With an eight-channel NAND interface, the drive provides the maximum density of up to 4TB in the M.2 form factor and 8TB in U.2., and delivers sequential read of up to 3.2GB/s and random write of 160K IOPS at 14W or below. Compared to the eSSD with 72-layer 256Gb 3D NAND, announced at the August 2018 Flash Memory Summit (FMS) and qualified with major datacenter companies, the new SSD improves sequential read by 30% and random write by up to 70% at the equal capacity and form factor. It supports both read-intensive and mixed-use applications, such as internet data centers, AI, ML, or Virtual Desktop Infrastructure (VDI).

With this product, SK hynix seeks to secure a leading edge in the eSSD market as it transitions from Serial Advanced Technology Attachment (SATA) to NVMe. The new SSD began its qualification with top-tier global cloud service providers and server makers, with volume production slated to begin in the second half of 2019. The Company also plans to launch a 16TB eSSD based on 96-layer 4D NAND at the end of this year, with mass production starting next year.

To actively promote the product, the Company also plans to display it at marketing events such as HPE Discover in Las Vegas, U.S.A., which will be held from June 18th to 20th.

“Not only cloud hyperscalers, who already adopt NVMe as the mainstream interface, but also traditional datacenters are planning to make the transition. I hope SK hynix will excel in the eSSD market, thanks to the best-in-class performance of its NVMe offering,” said Vice President Kim Samil, Head of NAND Storage Marketing at SK hynix.

According to market researcher Forward Insights, NVMe SSDs are expected to make up more than half of the Enterprise SSD market in 2019, with the NVMe interface accounting for 90% or more of total SSD gigabytes by 2023.

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[Note] NVMe (Non-Volatile Memory Express) is a communication protocol for the PCIe (Peripheral Component Interconnect Express) interface that enables large-capacity command queuing, high bandwidth (8GT/s on PCIe Gen 3), and extensive parallel processing

Media Contact

SK hynix Inc.
Global Public Relations

Technical Leader (Assistant Manager)
Hyun Kyung Olivia Lee
Phone: +82.31.8093.4771
E-Mail: hyunkyung14.lee@sk.com

Technical Leader (Senior Manager)
Eun Suk Yixi Lee
Phone: +82.31.8093.4790
E-Mail: eunsuk8.lee@sk.com

The post SK hynix Launches World-Class Low-Power NVMe Enterprise SSD first appeared on SK hynix Newsroom.

SK hynix Inc. (or ‘the Company’, www.skhynix.com) announced it has launched NVMe(Non-Volatile Memory Express) 1TB(Terabyte) enterprise SSD based on its own 2nd generation 3D NAND Flash and in-house controller. This SSD has been recently qualified by a major customer of the Company for server use.

This cutting-edge 3D NAND based NVMe SSD supports PCIe Gen 3×4 lanes, providing higher bandwidth and lower latency to process data far quicker than SATA SSDs. Presented in a M.2 form factor, the product is ideal for open cloud servers, being in compliance with OCS(Open Cloud Server) v2.1 specifications as well as applicable to Intel Broadwell(Intel® Xeon® Processor E5-2673) CPU systems. Plus, since most of the datacenter servers presented lately by OCP(Open Compute Project) have installed PCIe NVMe SSDs, the importance of NVMe SSD in the market is expected to increase gradually.

The SSD operates at 1800MB/s(Megabytes per second) and 770MB/s of sequential read/write speed and runs random read/write speed at 160,000 IOPS(Input/Output operations per second) and 30,000 IOPS.

“SK hynix is pleased to expect open cloud servers to enhance their performances with this advanced NVMe SSD” said Vice President SooHwan Choi, the Head of NAND Product Planning Office.

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About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), Flash memory chips (“NAND Flash”) and CMOS Image Sensors (“CIS”) for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK hynix is available at www.skhynix.com.

Media Contact

SK hynix Inc.
Public Relations

Assistant Manager
Heeyoung Son
Phone: +82.31.8093.4719
E-Mail: heeyoung.son@sk.com

The post SK hynix Launches NVMe Enterprise SSD utilizing 2nd Generation 3D NAND first appeared on SK hynix Newsroom.