When the earliest semiconductor devices emerged in the 19th century, a revolution was set in motion that would reshape the technological landscape. One scientific breakthrough after another, these milestones mark the dawn of an era in which innovation and progress became the new normal. Ultimately, these discoveries changed the way people live, work, and connect. In this Semiconductor 101 episode, the milestones and key turning points of the semiconductor industry, and SK hynix, will be examined to better understand how semiconductor technology reached today’s unprecedented levels.

When was the first semiconductor made?

As shown in the first episode, the development of semiconductor technology throughout history cannot be attributed to one person or a single moment. Instead, a long and intertwined web of pioneers and innovators contributed to the field’s evolution.

Starting with the first documented observation of a semiconductor effect by English scientist Michael Faraday in 1833, progress in the semiconductor world began to gather pace with several key discoveries. In 1874, German physicist Karl Ferdinand Braun invented what is widely considered to be the first-ever semiconductor diode¹. The mid-20th century then witnessed a number of key inventions including the transistor² in 1947, the integrated circuit³ in 1958, and the MOSFET⁴, in 1960.

The origins of semiconductor memory can be traced back to the 1960s

A number of these innovative technologies would go on to be applied in the memory field, leading to the first semiconductor memory products. Developed by engineers at major semiconductor companies, some of these early semiconductor memory solutions include: DRAM⁵, SRAM⁶, and NAND flash.

DRAM
In 1966, IBM’s Robert Heath Dennard invented DRAM, a system that would hold one bit in a single transistor. The technology was put into popular use in 1970 when Intel developed a 1-kilobit DRAM chip using a three-transistor cell design. Called the 1103, the first-ever commercial DRAM replaced magnetic core memories as the new standard technology for computer memory.

SRAM
Robert Norman patented a semiconductor SRAM design at Fairchild Semiconductor in 1963 to create a faster and more reliable form of memory capable of enhancing computing performance. Two years later, IBM commercialized the first SRAM chip for use in its computer. Unlike DRAM, SRAM can retain data without the need for constant refreshing. This capability, coupled with its high speed and reliability, ensured that SRAM became an essential component in modern computing.

NAND Flash
As the most widely-used flash memory today, NAND flash has numerous applications including smartphones, solid-state drives (SSDs), and data centers. This electronic, non-volatile computer memory storage that can be erased and reprogrammed was first unveiled by Fujio Masuoka of Toshiba Memory Corporation (now known as KIOXIA) in 1987. The company would go on to commercialize the world’s first NAND flash memory product in 1991.

When did semiconductor memory become important for our daily lives?

Semiconductor memory has progressed and grown in importance in line with the rapid explosion of data and technological advancements. By tracing the history of technological progress over the last century, it is clear to see the key role that semiconductor memory plays in these technologies and daily life.

Demand for semiconductor memory has grown rapidly as data generation has increased over the years

Age of Giant Computers: Before 1980s
Although unimaginable today, the first line of computers such as the ENIAC⁷ was so large that they would take up a whole room. These massive devices were almost exclusively used by businesses and governments for bulk data processing and complex calculations. In terms of data storage, there was a landmark change in the 1970s when semiconductor memory replaced magnetic-based memory to become the dominant storage technology.

Emergence of PCs: 1980s–2000s
Many people’s memories of their first family computer will be of a bulky, gray PC sitting atop an office desk. While they are primitive by modern standards, these early popularized PCs of the 1980s brought computing—and data—into homes across the world for the first time. One of the most prevalent PCs of this era was Commodore 64 (C64), which came with 64 kilobytes (KB) of RAM⁸ when it was released in 1982.

Smartphones & Cloud Computing: 2000s to Present
Although it was not the first smartphone, the original iPhone kicked off the smartphone boom upon its release in 2007. Able to take photos, send emails, access the internet, and more, smartphones generate huge amounts of data which is stored in semiconductor memory. As the pace of data generation continues to quicken, demand is also growing for cloud storage which relies on server DRAM, NAND flash, and SSDs.

The AI Era & Beyond
As AI continues to permeate more aspects of daily life, semiconductor memory is driving the technology’s development. High-performance memory such as SK hynix’s HBM⁹ is optimized for AI applications as it can handle and access vast amounts of data. As the pace of data usage continues to accelerate over the course of the AI era and beyond, semiconductor memory will only play a bigger role in AI and other advanced technologies.

When did SK hynix start manufacturing semiconductors?

Founded as Hyundai Electronics in 1983, SK hynix has been a hub of innovation in the semiconductor industry over the course of its 40-plus-year history. In 1984, SK hynix’s pilot production of South Korea’s first-ever 16 kilobit (Kb) SRAM kickstarted the company’s journey as a semiconductor manufacturer. Just a year later, the company mass-produced its first DRAM product—a 64 Kb DRAM. SK hynix then completed construction of a semiconductor assembly plant two months later, enabling it to ramp up production.

As the years ticked by, the company enhanced its product lineup and fully established itself as a leader in the semiconductor sector. Some of its key milestones included mass-producing the 256 Mb SDRAM for mobile phones in 2003, developing the 512 Mb NAND flash in 2004, and the world’s first TSV¹⁰-based HBM in 2013.

Fast-forward to today, SK hynix has a broad portfolio of ultra-high-performance solutions including DRAM, NAND flash, SSDs, and CMOS image sensors (CIS)¹¹. The company is continually pushing technological limits to develop groundbreaking products such as the world’s first 321-layer NAND flash and industry-leading HBM3E. Taking the latest 12-layer, 36 GB HBM3E as an example, this groundbreaking DRAM for AI systems boasts around 4.5 million times¹² more data storage than the 64 Kb DRAM of 1985. Having come so far over the years, the company is set to continue to set new standards in the semiconductor sector with its next-generation products.

SK hynix’s semiconductor memory products have evolved immensely since the company’s early days

When did SK hynix expand into the global market?

SK hynix has constantly advanced its product lineup, formed strategic global partnerships, and innovated across its operations to become a leading light in the semiconductor memory industry. Looking at the company’s flagship products, SK hynix held a 31.8% share of the DRAM market and a 21.6% share of the NAND flash market in the fourth quarter of 2023. The company is also the HBM market leader, dominating the sector with its industry-leading products.

SK hynix commands significant shares of the global DRAM and NAND flash markets

While there wasn’t a single moment when SK hynix expanded in the global market, there are several instances over the years where the company has made its mark worldwide:

1983 – Began overseas expansion with establishment of Hyundai Electronics America—later becoming SK hynix America

1989 – Ranked 20th in the global semiconductor industry

1995 – Established a non-memory U.S. corporation called SYMBIOS and constructed a semiconductor plant in the U.S. state of Oregon

1996 – Began its initial public offering (IPO) process

2004 – Sold non-memory business to shift focus to semiconductor memory

2006 – Completed construction of DRAM chip plant in Wuxi, China

2010 – Named to Dow Jones’ Sustainability World Index, started joint development with Hewlett-Packard for next-generation memory product, and completed second memory chip plant in China capable of 100 million units of 1 GB DRAM chips per month

2012 – Joined SK Group and officially rebranded as SK hynix

2018 – Posted record operating profits

2020 – Invested in AI company Gauss Labs located in Silicon Valley

2021 – Completed first phase of acquiring Intel’s NAND business to enhance AI memory capabilities

2023 – Developed and mass-produced HBM3E with the world’s best specifications for AI systems and applications

2024 – Announced plan to build advanced chip packaging plant and R&D facility in Indiana, U.S.

¹Semiconductor diode: A simple electronic component that conducts electricity in one direction.
²Transistor: A semiconductor device that regulates current or voltage flow and acts as a switch or gate for electronic signals.
³Integrated circuit (IC): A small electronic device comprising of components such as transistors, resistors, and capacitors on semiconductor material.
⁴Metal-oxide-semiconductor field-effect transistor (MOSFET): An active semiconductor device in which a conducting channel is induced in the region between two electrodes by a voltage applied to an insulated electrode on the surface of the region.
⁵Dynamic random-access memory (DRAM): Volatile memory that needs to be refreshed periodically to maintain stored data. Like SRAM, it loses stored data when the power supply is removed.
⁶Static random-access memory (SRAM): Volatile memory that holds memory permanently as long as power is supplied. Unlike DRAM, it does not have to be refreshed periodically to keep storing data.
⁷Electronic Numerical Integrator and Computer (ENIAC): Built in 1946, the ENIAC was the world’s first general purpose electronic computer.
⁸Random access memory (RAM): A computer’s main memory in which data can be rapidly accessed directly by the central processing unit regardless of the sequence it was recorded.
⁹High Bandwidth Memory (HBM): A high-value, high-performance product that possesses much higher data processing speeds compared to existing DRAMs by vertically connecting multiple DRAMs with through-silicon via (TSV).
¹⁰Through-silicon via (TSV): A type of vertical interconnect access (via) that completely passes through a silicon die or wafer to enable the stacking of silicon dice.
¹¹CMOS image sensor (CIS): Acting as the “eyes” of electronic devices, a CIS converts light into electrical energy to create images.
¹²Calculation based on the decimal standard.

Having looked at when semiconductor technology and SK hynix began to make their mark on the world, the next episode will cover where semiconductors are developed and more.

<Other articles from this series>

[Semiconductor 101] SK hynix’s Guide to Who’s Who in the Semiconductor Industry

[Semiconductor 101] SK hynix Explains “What’s What” in the Semiconductor World

The post [Semiconductor 101] When Semiconductors & SK hynix Made Their Mark on the World first appeared on SK hynix Newsroom.

The U.S. Department of Justice (“DOJ”) and the E.U. Commission have both notified hynix Semiconductor America and hynix Semiconductor Inc. (“hynix”) that they have closed their respective investigations into possible antitrust violations regarding static random access memory (“SRAM”).

hynix fully cooperated with the investigations, which began in October of 2006, and maintained throughout that it had committed no wrongdoing. The investigations are now closed, and no charges have been brought against any hynix entity.

“It is unfortunate that the current system requires companies to spend significant resources responding to such investigations, even if they are without a solid basis,” said Mr. M G Choi, hynix Senior Vice President of Corporate Strategy.

hynix will now focus its attention on dismissing the U.S. class action lawsuits. “These lawsuits were filed immediately after the investigations were made public, and the plaintiffs’ lawyers were evidently hoping to ride on the coattails of the government investigation. Now that they can no longer do so, we will vigorously pursue dismissal of these cases,” said Mr. Choi.

About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Icheon, Korea, is the world’s top tier memory semiconductor supplier offering Dynamic Random Access Memory chips (“DRAMs”) and Flash memory chips to a wide range of established international customers. The Company’s shares are traded on the Korea Stock Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about hynix is available at www.hynix.com

Media Contact

CORPORATE COMMUNICATIONS

Assistant Manager
Seong-Ae Park
Phone: +82.2.3459.5325
Fax: +82.2.3459.5333
E-Mail: seongae.park@hynix.com

The post SRAM Antitrust Investigations Closed with No Charges Filed against hynix first appeared on SK hynix Newsroom.

Today, hynix Semiconductors Inc., announced successful validation of its Pseudo SRAM for next-generation mobile applications from multiple customers.

As a result, hynix is expecting a significant increase in its Pseudo SRAM revenue for the remainder of this year and projects $100M in Pseudo SRAM sales for 2004.

hynix is currently mass-producing its16M and 32M Pseudo SRAM devices using its .15-micron process technology. The firm expects to begin mass production of its 64M-density device by first quarter of next year.

Pseudostatic RAM architecture utilizes a single-transistor structure rather than six-transistors. This allows mobile phone makers to add more features to their phones yet maintain system speed, a compact form and competitive pricing. The hynix Pseudo SRAMs support supply and I/O voltages ranging from 1.8 to 3.0 volts, 75-ns or 85-ns access times and can go as low as 2-microamps in deep power down mode. These features allow for wide adoption in next generation mobile applications by boosting performance, reducing power consumption and extending battery life. In addition to a leading position in the Pseudo SRAM market, hynix has already begun supplying low-power DRAMs for adoption in next-generation mobile application and will begin mass production of its NAND Flash by the first quarter of next year. hynix aims to be a leading global total solution provider for the mobile memory market.

Image Download

About hynix Semiconductor Inc.

hynix Semiconductor Inc. (HSI) of Ichon, Korea, is an industry leader in the development, sales, marketing and distribution of high-quality semiconductors, including DRAM, SRAM, Flash memory and system IC devices. hynix Semiconductor is the world’s leading DRAM supplier with thirteen semiconductor-manufacturing facilities worldwide, and production capacity of over 300,000 wafer starts per month. In addition, hynix is expanding its system IC business unit with leading technology and added deep sub-micron foundry services to strategically broaden its overall semiconductor presence and achieve its goal of leading the global semiconductor market. hynix maintains worldwide development, manufacturing, sales and marketing facilities.

The post hynix Expands Pseudo SRAM Product Line Up For Mobile Applications first appeared on SK hynix Newsroom.

Image Download

Seoul, Korea, March 7, 2000 – Hyundai Electronics Industries Co., Ltd. (HEI) announced today that it had developed an 8Mb SRAM family for next generation mobile handset applications. The 8Mb SRAM from Hyundai, produced using 0.18 micron (1 micron = 1 millionth of a meter) process technology, is available at 1.8, 2.5, and 3.0 volts with a stand-by level of less than 10uA. The product utilizes Chip Scaled Package (CSP) technology to meet today’s requirement for high-density, ultra-compact mobile phones. Hyundai is currently supplying samples to major mobile manufacturers. The company expects significant sales when mass production begins later this year. Hyundai hopes to secure its position in the SRAM market, the mobile component segment in particular, through the introduction and promotion of products such as this. An estimated 410 million mobile handsets were sold in 2000 (a 46% increase over 1999’s 280 million units) with sales of 500 million units anticipated in 2001. Principle targets for the Hyundai-made 8Mb SRAM are high-end mobile handsets and wireless communication devices. Combined with the launch of IMT-2000, the chip is expected to dominate the SRAM mobile application market for the next two-to-three years. Owing to I-mode and Internet phone applications, demand for high-density SRAM is predicted to grow, particularly in Japan and other Asian countries. In Korea, for example, introduction of IS-95C service is expected to boost demand for 8Mb SRAM beginning the second half of this year. Thanks to concerted effort and investment begun in 1999 to reinforce its SRAM business, Hyundai is now ranked among world’s top SRAM suppliers. HEI will continue to lead the market in 2001 with innovative R&D and improved customer service. About Hyundai Electronics Industries Co., Ltd. Hyundai Electronics Industries Co., Ltd. (HEI) of Ichon, Korea is an industry leader in the development, sales, marketing, and distribution of high-quality Semiconductors (including DRAM, SRAM, Flash memory, and System IC devices), Telecommunications, and Liquid Crystal Displays. The Semiconductor Group of Hyundai Electronics is the world’s largest DRAM supplier with eleven semiconductor manufacturing facilities worldwide, and production capacity of over 300,000 wafer starts per month. In addition, Hyundai is expanding its System IC business unit with leading technology and added deep-submicron foundry services to strategically broaden its overall semiconductor presence and achieve its goal of leading the global semiconductor market. Based in Korea, HEI maintains development, manufacturing, sales, and marketing facilities strategically located worldwide.

The post Hyundai Unveils New 8Mb Super Low Power SRAM first appeared on SK hynix Newsroom.

HEI (President: Kim, Young Hwan) developed the low voltage 4M SRAM (Static Random Access Memory), and displayed its commercial sample recently. The 4M SRAM, developed by HEI, is being highly received by the world-famous communication companies such as Motorola and Nokia, due to its high quality: the width of circuit is 0.25 micron, with the size of chip reduced by more than a half; it works under the voltage as low as 1.8 v. HEI aims at total sales of $50 million this year by producing two million 4M SRam per month starting from the fourth quarter and annual sales of $300 million by expanding the volume of production into five million per month in the year 2000. The price is expected to be $10 this year, and going to be $5-7 next year. According to the worldly known market research institute, Data Quest, the size of the market for SRAM recorded $3.7 billion in 1998, and it will be expanded to $10 billion in 2001 by growing 30% per year thereafter. Especially, the products for communication equipment HEI concentrates on is expected to occupy 50% of the market share in the whole SRAM market. HEI is expected to rise as a world-class corporation occupying 10% in the SRAM market, the second largest memory market next to DRAM, by developing and releasing 4M SRAM which is expected to be main force product in the market of SRAM for communications after 2000 at an early stage, and by producing 8M SRAM in the first quarter of 1999. The 4M SRAM of HEI operates at a speed of 85 nanosecond under the voltage as low as 1.8 v, and at a speed of 55 nanosecond under the voltage of 3 at the same time. Therefore, it could be adapted to the portable multi media instruments such as IMT 2000 terminal and Iridium (mobile communications via satellite), since it has a wide range of voltage selection and consumes power less (4 microampere) on stand by. Also, it is suitable for the next generation mobile communication equipment that has been getting smaller and lighter, since it reduced the size of chip by more than a half compared to the products that applied the circuit width of 0.32 micron and adopted a small-sized micro BGA package.

The post HEI DEVELOPED 4M SRAM USED IN MOBILE COMMUNICATIONS INSTRUMENTS first appeared on SK hynix Newsroom.